Photoluminescence of CuInS2 single crystals grown by traveling heater and chemical vapor transport methods

A.V. Mudryi, A.V. Karotki, M.V. Yakushev, R.W. Martin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chemical vapor transport (CVT) has been investigated at 4.2, 78, and 300 K. Intense emission in the near-band-edge region caused by free and bound excitons has been detected for both types of crystals. Taking into account the energy position of the luminescence line of the ground (n = 1) and first excited (n = 2) states, the binding energy for free A excitons has been estimated to be about 19.7 and 18.5 meV for CuInS2 grown by CVT and THM, respectively.
LanguageEnglish
Pages215-219
Number of pages4
JournalJournal of Applied Spectroscopy
Volume76
Issue number2
DOIs
Publication statusPublished - Mar 2009

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heaters
Photoluminescence
Vapors
excitons
Single crystals
vapors
photoluminescence
single crystals
Binding energy
Luminescence
binding energy
luminescence
Crystals
crystals
LDS 751
energy

Keywords

  • CuInS2
  • photoluminescence
  • exciton

Cite this

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title = "Photoluminescence of CuInS2 single crystals grown by traveling heater and chemical vapor transport methods",
abstract = "Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chemical vapor transport (CVT) has been investigated at 4.2, 78, and 300 K. Intense emission in the near-band-edge region caused by free and bound excitons has been detected for both types of crystals. Taking into account the energy position of the luminescence line of the ground (n = 1) and first excited (n = 2) states, the binding energy for free A excitons has been estimated to be about 19.7 and 18.5 meV for CuInS2 grown by CVT and THM, respectively.",
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Photoluminescence of CuInS2 single crystals grown by traveling heater and chemical vapor transport methods. / Mudryi, A.V.; Karotki, A.V.; Yakushev, M.V.; Martin, R.W.

In: Journal of Applied Spectroscopy, Vol. 76, No. 2, 03.2009, p. 215-219.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoluminescence of CuInS2 single crystals grown by traveling heater and chemical vapor transport methods

AU - Mudryi, A.V.

AU - Karotki, A.V.

AU - Yakushev, M.V.

AU - Martin, R.W.

PY - 2009/3

Y1 - 2009/3

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AB - Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chemical vapor transport (CVT) has been investigated at 4.2, 78, and 300 K. Intense emission in the near-band-edge region caused by free and bound excitons has been detected for both types of crystals. Taking into account the energy position of the luminescence line of the ground (n = 1) and first excited (n = 2) states, the binding energy for free A excitons has been estimated to be about 19.7 and 18.5 meV for CuInS2 grown by CVT and THM, respectively.

KW - CuInS2

KW - photoluminescence

KW - exciton

UR - http://dx.doi.org/10.1007/s10812-009-9163-5

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