Photoluminescence of CuInS2 single crystals grown by traveling heater and chemical vapor transport methods

A.V. Mudryi, A.V. Karotki, M.V. Yakushev, R.W. Martin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chemical vapor transport (CVT) has been investigated at 4.2, 78, and 300 K. Intense emission in the near-band-edge region caused by free and bound excitons has been detected for both types of crystals. Taking into account the energy position of the luminescence line of the ground (n = 1) and first excited (n = 2) states, the binding energy for free A excitons has been estimated to be about 19.7 and 18.5 meV for CuInS2 grown by CVT and THM, respectively.
Original languageEnglish
Pages (from-to)215-219
Number of pages4
JournalJournal of Applied Spectroscopy
Volume76
Issue number2
DOIs
Publication statusPublished - Mar 2009

Keywords

  • CuInS2
  • photoluminescence
  • exciton

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