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Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chemical vapor transport (CVT) has been investigated at 4.2, 78, and 300 K. Intense emission in the near-band-edge region caused by free and bound excitons has been detected for both types of crystals. Taking into account the energy position of the luminescence line of the ground (n = 1) and first excited (n = 2) states, the binding energy for free A excitons has been estimated to be about 19.7 and 18.5 meV for CuInS2 grown by CVT and THM, respectively.
|Number of pages||4|
|Journal||Journal of Applied Spectroscopy|
|Publication status||Published - Mar 2009|
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- 1 Finished
Magnetic Field - and Pressure - Optical Effects In CULNSE2 And CULNS2
Martin, R. & Yakushev, M. V.
EPSRC (Engineering and Physical Sciences Research Council)
23/09/07 → 22/01/11