Photoluminescence mapping and Rutherford backscattering spectrometry of InGaN epilayers

K. P. O'Donnell, M. E. White, S. Pereira, M. F. Wu, A. Vantomme, W. Van Der Stricht, K. Jacobs

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

An experimental technique that provides an accurate measure of composition is necessary if we wish to ascertain the effect of indium content on the optical and structural characteristics of InGaN epilayers. Here we compare measurements by photoluminescence (PL) and Rutherford Backscattering Spectrometry (RBS) on two InGaN samples. The experimental results establish a direct linear relationship between the PL peak energy and the indium content. However, the indium fraction is not as high as might be expected for the low PL peak energies obtained in this work, probably in consequence of segregation in the InN-GaN solid solution. The samples also have relatively poor crystallinity. An excess of nitrogen, found in the sample of poorer quality, scales with PL peak energy.

LanguageEnglish
Pages171-174
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
DOIs
Publication statusPublished - 9 Nov 1999

Fingerprint

Epilayers
Rutherford backscattering spectroscopy
Spectrometry
Indium
backscattering
Photoluminescence
indium
photoluminescence
spectroscopy
energy
Solid solutions
crystallinity
solid solutions
Nitrogen
nitrogen
Chemical analysis

Keywords

  • InGaN epilayers
  • backscattering spectrometry
  • photoluminescence

Cite this

O'Donnell, K. P. ; White, M. E. ; Pereira, S. ; Wu, M. F. ; Vantomme, A. ; Van Der Stricht, W. ; Jacobs, K. / Photoluminescence mapping and Rutherford backscattering spectrometry of InGaN epilayers. In: Physica Status Solidi (B) Basic Research. 1999 ; Vol. 216, No. 1. pp. 171-174.
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Photoluminescence mapping and Rutherford backscattering spectrometry of InGaN epilayers. / O'Donnell, K. P.; White, M. E.; Pereira, S.; Wu, M. F.; Vantomme, A.; Van Der Stricht, W.; Jacobs, K.

In: Physica Status Solidi (B) Basic Research, Vol. 216, No. 1, 09.11.1999, p. 171-174.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoluminescence mapping and Rutherford backscattering spectrometry of InGaN epilayers

AU - O'Donnell, K. P.

AU - White, M. E.

AU - Pereira, S.

AU - Wu, M. F.

AU - Vantomme, A.

AU - Van Der Stricht, W.

AU - Jacobs, K.

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AB - An experimental technique that provides an accurate measure of composition is necessary if we wish to ascertain the effect of indium content on the optical and structural characteristics of InGaN epilayers. Here we compare measurements by photoluminescence (PL) and Rutherford Backscattering Spectrometry (RBS) on two InGaN samples. The experimental results establish a direct linear relationship between the PL peak energy and the indium content. However, the indium fraction is not as high as might be expected for the low PL peak energies obtained in this work, probably in consequence of segregation in the InN-GaN solid solution. The samples also have relatively poor crystallinity. An excess of nitrogen, found in the sample of poorer quality, scales with PL peak energy.

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