Abstract
An experimental technique that provides an accurate measure of composition is necessary if we wish to ascertain the effect of indium content on the optical and structural characteristics of InGaN epilayers. Here we compare measurements by photoluminescence (PL) and Rutherford Backscattering Spectrometry (RBS) on two InGaN samples. The experimental results establish a direct linear relationship between the PL peak energy and the indium content. However, the indium fraction is not as high as might be expected for the low PL peak energies obtained in this work, probably in consequence of segregation in the InN-GaN solid solution. The samples also have relatively poor crystallinity. An excess of nitrogen, found in the sample of poorer quality, scales with PL peak energy.
| Language | English |
|---|---|
| Pages | 171-174 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 216 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 9 Nov 1999 |
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Keywords
- InGaN epilayers
- backscattering spectrometry
- photoluminescence
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Photoluminescence mapping and Rutherford backscattering spectrometry of InGaN epilayers. / O'Donnell, K. P.; White, M. E.; Pereira, S.; Wu, M. F.; Vantomme, A.; Van Der Stricht, W.; Jacobs, K.
In: Physica Status Solidi (B) Basic Research, Vol. 216, No. 1, 09.11.1999, p. 171-174.Research output: Contribution to journal › Article
TY - JOUR
T1 - Photoluminescence mapping and Rutherford backscattering spectrometry of InGaN epilayers
AU - O'Donnell, K. P.
AU - White, M. E.
AU - Pereira, S.
AU - Wu, M. F.
AU - Vantomme, A.
AU - Van Der Stricht, W.
AU - Jacobs, K.
PY - 1999/11/9
Y1 - 1999/11/9
N2 - An experimental technique that provides an accurate measure of composition is necessary if we wish to ascertain the effect of indium content on the optical and structural characteristics of InGaN epilayers. Here we compare measurements by photoluminescence (PL) and Rutherford Backscattering Spectrometry (RBS) on two InGaN samples. The experimental results establish a direct linear relationship between the PL peak energy and the indium content. However, the indium fraction is not as high as might be expected for the low PL peak energies obtained in this work, probably in consequence of segregation in the InN-GaN solid solution. The samples also have relatively poor crystallinity. An excess of nitrogen, found in the sample of poorer quality, scales with PL peak energy.
AB - An experimental technique that provides an accurate measure of composition is necessary if we wish to ascertain the effect of indium content on the optical and structural characteristics of InGaN epilayers. Here we compare measurements by photoluminescence (PL) and Rutherford Backscattering Spectrometry (RBS) on two InGaN samples. The experimental results establish a direct linear relationship between the PL peak energy and the indium content. However, the indium fraction is not as high as might be expected for the low PL peak energies obtained in this work, probably in consequence of segregation in the InN-GaN solid solution. The samples also have relatively poor crystallinity. An excess of nitrogen, found in the sample of poorer quality, scales with PL peak energy.
KW - InGaN epilayers
KW - backscattering spectrometry
KW - photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=0033242871&partnerID=8YFLogxK
UR - https://onlinelibrary.wiley.com/doi/10.1002/%28SICI%291521-3951%28199911%29216%3A1%3C171%3A%3AAID-PSSB171%3E3.0.CO%3B2-%23
U2 - 10.1002/(SICI)1521-3951(199911)216:1<171::AID-PSSB171>3.0.CO;2-#
DO - 10.1002/(SICI)1521-3951(199911)216:1<171::AID-PSSB171>3.0.CO;2-#
M3 - Article
VL - 216
SP - 171
EP - 174
JO - Physica Status Solidi B
T2 - Physica Status Solidi B
JF - Physica Status Solidi B
SN - 0370-1972
IS - 1
ER -