Abstract
GaN films were grown by the MBE method on LiGaO2 substrates. Photoluminescence (PL) of the epitaxial films has been studied to characterize the films ex situ. The room-temperature PL spectrum contains an edge PL band and also a broad band of deep-level emission at 2.6 eV. This deep-level emission becomes very small in comparison with the edge emission at helium temperatures. Analysis of the low-temperature data suggests that the films contain both hexagonal and cubic crystallites. The main PL lines at 5.7 K are due to emission of excitons bound on neutral donors in hexagonal and cubic phases of the epitaxial film (3.472 eV and 3.263 eV), D-A pair recombination (3.154 eV) and also free electron-neutral acceptor transition (3.185 eV) in c-GaN. The involved acceptor has a binding energy of about 115 meV.
| Language | English |
|---|---|
| Pages | 59-63 |
| Number of pages | 5 |
| Journal | Semiconductor Science and Technology |
| Volume | 12 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 1997 |
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Keywords
- GaN films
- gallium nitride
- III-nitrides
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Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate. / Andrianov, A V; Lacklison, D E; Orton, J W; Cheng, T S; Foxon, C T; O'Donnell, K P; Nicholls, J F H.
In: Semiconductor Science and Technology, Vol. 12, No. 1, 01.01.1997, p. 59-63.Research output: Contribution to journal › Article
TY - JOUR
T1 - Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate
AU - Andrianov, A V
AU - Lacklison, D E
AU - Orton, J W
AU - Cheng, T S
AU - Foxon, C T
AU - O'Donnell, K P
AU - Nicholls, J F H
PY - 1997/1/1
Y1 - 1997/1/1
N2 - GaN films were grown by the MBE method on LiGaO2 substrates. Photoluminescence (PL) of the epitaxial films has been studied to characterize the films ex situ. The room-temperature PL spectrum contains an edge PL band and also a broad band of deep-level emission at 2.6 eV. This deep-level emission becomes very small in comparison with the edge emission at helium temperatures. Analysis of the low-temperature data suggests that the films contain both hexagonal and cubic crystallites. The main PL lines at 5.7 K are due to emission of excitons bound on neutral donors in hexagonal and cubic phases of the epitaxial film (3.472 eV and 3.263 eV), D-A pair recombination (3.154 eV) and also free electron-neutral acceptor transition (3.185 eV) in c-GaN. The involved acceptor has a binding energy of about 115 meV.
AB - GaN films were grown by the MBE method on LiGaO2 substrates. Photoluminescence (PL) of the epitaxial films has been studied to characterize the films ex situ. The room-temperature PL spectrum contains an edge PL band and also a broad band of deep-level emission at 2.6 eV. This deep-level emission becomes very small in comparison with the edge emission at helium temperatures. Analysis of the low-temperature data suggests that the films contain both hexagonal and cubic crystallites. The main PL lines at 5.7 K are due to emission of excitons bound on neutral donors in hexagonal and cubic phases of the epitaxial film (3.472 eV and 3.263 eV), D-A pair recombination (3.154 eV) and also free electron-neutral acceptor transition (3.185 eV) in c-GaN. The involved acceptor has a binding energy of about 115 meV.
KW - GaN films
KW - gallium nitride
KW - III-nitrides
UR - http://www.scopus.com/inward/record.url?scp=0030644225&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/12/1/012
DO - 10.1088/0268-1242/12/1/012
M3 - Article
VL - 12
SP - 59
EP - 63
JO - Semiconductor Science and Technology
T2 - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 1
ER -