Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate

A V Andrianov; D E Lacklison; J W Orton; T S Cheng; C T Foxon; K P O'Donnell; J F H Nicholls

doi:10.1088/0268-1242/12/1/012

Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate

A V Andrianov, D E Lacklison, J W Orton, T S Cheng, C T Foxon, K P O'Donnell, J F H Nicholls

Physics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

GaN films were grown by the MBE method on LiGaO₂ substrates. Photoluminescence (PL) of the epitaxial films has been studied to characterize the films ex situ. The room-temperature PL spectrum contains an edge PL band and also a broad band of deep-level emission at 2.6 eV. This deep-level emission becomes very small in comparison with the edge emission at helium temperatures. Analysis of the low-temperature data suggests that the films contain both hexagonal and cubic crystallites. The main PL lines at 5.7 K are due to emission of excitons bound on neutral donors in hexagonal and cubic phases of the epitaxial film (3.472 eV and 3.263 eV), D-A pair recombination (3.154 eV) and also free electron-neutral acceptor transition (3.185 eV) in c-GaN. The involved acceptor has a binding energy of about 115 meV.

Original language	English
Pages (from-to)	59-63
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	12
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/12/1/012
Publication status	Published - 1 Jan 1997

Keywords

GaN films
gallium nitride
III-nitrides

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10.1088/0268-1242/12/1/012

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title = "Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate",

abstract = "GaN films were grown by the MBE method on LiGaO2 substrates. Photoluminescence (PL) of the epitaxial films has been studied to characterize the films ex situ. The room-temperature PL spectrum contains an edge PL band and also a broad band of deep-level emission at 2.6 eV. This deep-level emission becomes very small in comparison with the edge emission at helium temperatures. Analysis of the low-temperature data suggests that the films contain both hexagonal and cubic crystallites. The main PL lines at 5.7 K are due to emission of excitons bound on neutral donors in hexagonal and cubic phases of the epitaxial film (3.472 eV and 3.263 eV), D-A pair recombination (3.154 eV) and also free electron-neutral acceptor transition (3.185 eV) in c-GaN. The involved acceptor has a binding energy of about 115 meV.",

keywords = "GaN films, gallium nitride, III-nitrides",

author = "Andrianov, {A V} and Lacklison, {D E} and Orton, {J W} and Cheng, {T S} and Foxon, {C T} and O'Donnell, {K P} and Nicholls, {J F H}",

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T1 - Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate

AU - Andrianov, A V

AU - Lacklison, D E

AU - Orton, J W

AU - Cheng, T S

AU - Foxon, C T

AU - O'Donnell, K P

AU - Nicholls, J F H

PY - 1997/1/1

Y1 - 1997/1/1

N2 - GaN films were grown by the MBE method on LiGaO2 substrates. Photoluminescence (PL) of the epitaxial films has been studied to characterize the films ex situ. The room-temperature PL spectrum contains an edge PL band and also a broad band of deep-level emission at 2.6 eV. This deep-level emission becomes very small in comparison with the edge emission at helium temperatures. Analysis of the low-temperature data suggests that the films contain both hexagonal and cubic crystallites. The main PL lines at 5.7 K are due to emission of excitons bound on neutral donors in hexagonal and cubic phases of the epitaxial film (3.472 eV and 3.263 eV), D-A pair recombination (3.154 eV) and also free electron-neutral acceptor transition (3.185 eV) in c-GaN. The involved acceptor has a binding energy of about 115 meV.

AB - GaN films were grown by the MBE method on LiGaO2 substrates. Photoluminescence (PL) of the epitaxial films has been studied to characterize the films ex situ. The room-temperature PL spectrum contains an edge PL band and also a broad band of deep-level emission at 2.6 eV. This deep-level emission becomes very small in comparison with the edge emission at helium temperatures. Analysis of the low-temperature data suggests that the films contain both hexagonal and cubic crystallites. The main PL lines at 5.7 K are due to emission of excitons bound on neutral donors in hexagonal and cubic phases of the epitaxial film (3.472 eV and 3.263 eV), D-A pair recombination (3.154 eV) and also free electron-neutral acceptor transition (3.185 eV) in c-GaN. The involved acceptor has a binding energy of about 115 meV.

KW - GaN films

KW - gallium nitride

KW - III-nitrides

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DO - 10.1088/0268-1242/12/1/012

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SN - 0268-1242

VL - 12

SP - 59

EP - 63

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 1

ER -

Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate

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Keywords

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