Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate

A V Andrianov, D E Lacklison, J W Orton, T S Cheng, C T Foxon, K P O'Donnell, J F H Nicholls

Research output: Contribution to journalArticle

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Abstract

GaN films were grown by the MBE method on LiGaO2 substrates. Photoluminescence (PL) of the epitaxial films has been studied to characterize the films ex situ. The room-temperature PL spectrum contains an edge PL band and also a broad band of deep-level emission at 2.6 eV. This deep-level emission becomes very small in comparison with the edge emission at helium temperatures. Analysis of the low-temperature data suggests that the films contain both hexagonal and cubic crystallites. The main PL lines at 5.7 K are due to emission of excitons bound on neutral donors in hexagonal and cubic phases of the epitaxial film (3.472 eV and 3.263 eV), D-A pair recombination (3.154 eV) and also free electron-neutral acceptor transition (3.185 eV) in c-GaN. The involved acceptor has a binding energy of about 115 meV.

LanguageEnglish
Pages59-63
Number of pages5
JournalSemiconductor Science and Technology
Volume12
Issue number1
DOIs
Publication statusPublished - 1 Jan 1997

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Molecular beam epitaxy
Photoluminescence
photoluminescence
Epitaxial films
Substrates
Helium
Electron transitions
Binding energy
Crystallites
Excitons
Temperature
free electrons
crystallites
binding energy
helium
excitons
Electrons
broadband
room temperature
temperature

Keywords

  • GaN films
  • gallium nitride
  • III-nitrides

Cite this

Andrianov, A. V., Lacklison, D. E., Orton, J. W., Cheng, T. S., Foxon, C. T., O'Donnell, K. P., & Nicholls, J. F. H. (1997). Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate. Semiconductor Science and Technology, 12(1), 59-63. https://doi.org/10.1088/0268-1242/12/1/012
Andrianov, A V ; Lacklison, D E ; Orton, J W ; Cheng, T S ; Foxon, C T ; O'Donnell, K P ; Nicholls, J F H. / Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate. In: Semiconductor Science and Technology. 1997 ; Vol. 12, No. 1. pp. 59-63.
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Andrianov, AV, Lacklison, DE, Orton, JW, Cheng, TS, Foxon, CT, O'Donnell, KP & Nicholls, JFH 1997, 'Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate' Semiconductor Science and Technology, vol. 12, no. 1, pp. 59-63. https://doi.org/10.1088/0268-1242/12/1/012

Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate. / Andrianov, A V; Lacklison, D E; Orton, J W; Cheng, T S; Foxon, C T; O'Donnell, K P; Nicholls, J F H.

In: Semiconductor Science and Technology, Vol. 12, No. 1, 01.01.1997, p. 59-63.

Research output: Contribution to journalArticle

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AU - Andrianov, A V

AU - Lacklison, D E

AU - Orton, J W

AU - Cheng, T S

AU - Foxon, C T

AU - O'Donnell, K P

AU - Nicholls, J F H

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