Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate

A V Andrianov, D E Lacklison, J W Orton, T S Cheng, C T Foxon, K P O'Donnell, J F H Nicholls

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Abstract

GaN films were grown by the MBE method on LiGaO2 substrates. Photoluminescence (PL) of the epitaxial films has been studied to characterize the films ex situ. The room-temperature PL spectrum contains an edge PL band and also a broad band of deep-level emission at 2.6 eV. This deep-level emission becomes very small in comparison with the edge emission at helium temperatures. Analysis of the low-temperature data suggests that the films contain both hexagonal and cubic crystallites. The main PL lines at 5.7 K are due to emission of excitons bound on neutral donors in hexagonal and cubic phases of the epitaxial film (3.472 eV and 3.263 eV), D-A pair recombination (3.154 eV) and also free electron-neutral acceptor transition (3.185 eV) in c-GaN. The involved acceptor has a binding energy of about 115 meV.

Original languageEnglish
Pages (from-to)59-63
Number of pages5
JournalSemiconductor Science and Technology
Volume12
Issue number1
DOIs
Publication statusPublished - 1 Jan 1997

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Keywords

  • GaN films
  • gallium nitride
  • III-nitrides

Cite this

Andrianov, A. V., Lacklison, D. E., Orton, J. W., Cheng, T. S., Foxon, C. T., O'Donnell, K. P., & Nicholls, J. F. H. (1997). Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate. Semiconductor Science and Technology, 12(1), 59-63. https://doi.org/10.1088/0268-1242/12/1/012