Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wells and quantum boxes

M. E. White, K. P. O'Donnell, R. W. Martin, C. J. Deatcher, B. Damilano, Nicolas Grandjean, J. Massies

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Photoluminescence excitation (PLE) spectroscopy was carried out to investigate the excitation/ emission cycle of MBE grown InGaN quantum structures. Quantum well and Stranski-Krastanov type quantum box samples were chosen that emit from blue to red. The bandgap energy (Eg), determined from the PLE spectrum, was found to decrease concurrently with the detection energy. This indicates that the emission spectrum from the sample is inhomogeneously broadened. A plot of the resultant Stokes shift against detection energy shows a linear trend. Our results agree with those from independent measurements of thermally detected optical absorption (TDOA) in some of the samples. On comparison with absorption and PLE measurements on MOCVD grown InGaN, a difference in the bandgap energies obtained becomes apparent for detection energies below ≈2.6 eV.

LanguageEnglish
Pages129-132
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume228
Issue number1
DOIs
Publication statusPublished - 5 Nov 2001

Fingerprint

Molecular beam epitaxy
Semiconductor quantum wells
boxes
Photoluminescence
quantum wells
Spectroscopy
photoluminescence
Energy gap
spectroscopy
excitation
Metallorganic chemical vapor deposition
Light absorption
energy
metalorganic chemical vapor deposition
emission spectra
optical absorption
plots
trends
cycles
shift

Keywords

  • optoelectronics
  • photoluminescence
  • bandgap

Cite this

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abstract = "Photoluminescence excitation (PLE) spectroscopy was carried out to investigate the excitation/ emission cycle of MBE grown InGaN quantum structures. Quantum well and Stranski-Krastanov type quantum box samples were chosen that emit from blue to red. The bandgap energy (Eg), determined from the PLE spectrum, was found to decrease concurrently with the detection energy. This indicates that the emission spectrum from the sample is inhomogeneously broadened. A plot of the resultant Stokes shift against detection energy shows a linear trend. Our results agree with those from independent measurements of thermally detected optical absorption (TDOA) in some of the samples. On comparison with absorption and PLE measurements on MOCVD grown InGaN, a difference in the bandgap energies obtained becomes apparent for detection energies below ≈2.6 eV.",
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Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wells and quantum boxes. / White, M. E.; O'Donnell, K. P.; Martin, R. W.; Deatcher, C. J.; Damilano, B.; Grandjean, Nicolas; Massies, J.

In: Physica Status Solidi (B) Basic Research, Vol. 228, No. 1, 05.11.2001, p. 129-132.

Research output: Contribution to journalArticle

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AU - White, M. E.

AU - O'Donnell, K. P.

AU - Martin, R. W.

AU - Deatcher, C. J.

AU - Damilano, B.

AU - Grandjean, Nicolas

AU - Massies, J.

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