Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents

H D  Sun; A H  Clark; S  Calvez; M D  Dawson; D K  Shih; H H  Lin

doi:10.1063/1.2034119

Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents

H D Sun, A H Clark, S Calvez, M D Dawson, D K Shih, H H Lin

Institute Of Photonics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.

Original language	English
Article number	081908
Pages (from-to)	-
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	8
DOIs	https://doi.org/10.1063/1.2034119
Publication status	Published - 22 Aug 2005

Keywords

single-quantum-well
laser-diodes
band-gap
GaInNAs devices
alloys
gaas
luminescence

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10.1063/1.2034119

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title = "Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents",

abstract = "We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25\%) or high (5\%) N content.",

keywords = "single-quantum-well, laser-diodes, band-gap, GaInNAs devices, alloys, gaas, luminescence",

author = "Sun, \{H D\} and Clark, \{A H\} and S Calvez and Dawson, \{M D\} and Shih, \{D K\} and Lin, \{H H\}",

year = "2005",

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doi = "10.1063/1.2034119",

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T1 - Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents

AU - Sun, H D

AU - Clark, A H

AU - Calvez, S

AU - Dawson, M D

AU - Shih, D K

AU - Lin, H H

PY - 2005/8/22

Y1 - 2005/8/22

N2 - We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.

AB - We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.

KW - single-quantum-well

KW - laser-diodes

KW - band-gap

KW - GaInNAs devices

KW - alloys

KW - gaas

KW - luminescence

U2 - 10.1063/1.2034119

DO - 10.1063/1.2034119

M3 - Article

SN - 0003-6951

VL - 87

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081908

ER -

Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents

Abstract

Keywords

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