Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents

H D Sun, A H Clark, S Calvez, M D Dawson, D K Shih, H H Lin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.

LanguageEnglish
Article number081908
Pages-
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number8
DOIs
Publication statusPublished - 22 Aug 2005

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photoluminescence
quantum wells
wavelengths
optical properties
temperature

Keywords

  • single-quantum-well
  • laser-diodes
  • band-gap
  • GaInNAs devices
  • alloys
  • gaas
  • luminescence

Cite this

Sun, H D ; Clark, A H ; Calvez, S ; Dawson, M D ; Shih, D K ; Lin, H H . / Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. In: Applied Physics Letters. 2005 ; Vol. 87, No. 8. pp. -.
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abstract = "We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25{\%}) or high (5{\%}) N content.",
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Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. / Sun, H D ; Clark, A H ; Calvez, S ; Dawson, M D ; Shih, D K ; Lin, H H .

In: Applied Physics Letters, Vol. 87, No. 8, 081908, 22.08.2005, p. -.

Research output: Contribution to journalArticle

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AU - Sun, H D

AU - Clark, A H

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AU - Shih, D K

AU - Lin, H H

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