Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents

H D Sun, A H Clark, S Calvez, M D Dawson, D K Shih, H H Lin

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Abstract

We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.

Original languageEnglish
Article number081908
Pages (from-to)-
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number8
DOIs
Publication statusPublished - 22 Aug 2005

Keywords

  • single-quantum-well
  • laser-diodes
  • band-gap
  • GaInNAs devices
  • alloys
  • gaas
  • luminescence

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