Photoluminescence characterization of mid-infrared inNxAs1-x/In0.53Ga0.47/InP multiquantum wells with various n contents

H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson, D.K. Shih, H.H. Lin

Research output: Contribution to journalArticle

LanguageEnglish
Pages081908
JournalApplied Physics Letters
Volume87
Publication statusPublished - 2005

Cite this

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title = "Photoluminescence characterization of mid-infrared inNxAs1-x/In0.53Ga0.47/InP multiquantum wells with various n contents",
author = "H.D. Sun and A.H. Clark and S. Calvez and M.D. Dawson and D.K. Shih and H.H. Lin",
year = "2005",
language = "English",
volume = "87",
pages = "081908",
journal = "Applied Physics Letters",
issn = "0003-6951",

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Photoluminescence characterization of mid-infrared inNxAs1-x/In0.53Ga0.47/InP multiquantum wells with various n contents. / Sun, H.D.; Clark, A.H.; Calvez, S.; Dawson, M.D.; Shih, D.K.; Lin, H.H.

In: Applied Physics Letters, Vol. 87, 2005, p. 081908.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Photoluminescence characterization of mid-infrared inNxAs1-x/In0.53Ga0.47/InP multiquantum wells with various n contents

AU - Sun, H.D.

AU - Clark, A.H.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Shih, D.K.

AU - Lin, H.H.

PY - 2005

Y1 - 2005

M3 - Article

VL - 87

SP - 081908

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -