Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy

H.D. Sun; S. Calvez; M.D. Dawson; P. Gilet; L. Grenouillet; A. Million

doi:10.1007/s00339-004-2985-3

Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy

H.D. Sun, S. Calvez, M.D. Dawson, P. Gilet, L. Grenouillet, A. Million

Research output: Contribution to journal › Article › peer-review

Abstract

We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.

Original language	English
Pages (from-to)	9-12
Number of pages	3
Journal	Applied Physics A: Materials Science and Processing
Volume	80
Issue number	1
DOIs	https://doi.org/10.1007/s00339-004-2985-3
Publication status	Published - Jan 2005

Keywords

photoluminescence
GaInNAs/GaAs
optical transitions
phase-separated quantum-dot states
molecular beam epitaxy

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10.1007/s00339-004-2985-3

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title = "Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy",

abstract = "We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.",

keywords = "photoluminescence, GaInNAs/GaAs, optical transitions, phase-separated quantum-dot states, molecular beam epitaxy",

author = "H.D. Sun and S. Calvez and M.D. Dawson and P. Gilet and L. Grenouillet and A. Million",

year = "2005",

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doi = "10.1007/s00339-004-2985-3",

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T1 - Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy

AU - Sun, H.D.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Gilet, P.

AU - Grenouillet, L.

AU - Million, A.

PY - 2005/1

Y1 - 2005/1

N2 - We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.

AB - We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.

KW - photoluminescence

KW - GaInNAs/GaAs

KW - optical transitions

KW - phase-separated quantum-dot states

KW - molecular beam epitaxy

UR - http://www.10.1007/s00339-004-2985-3

U2 - 10.1007/s00339-004-2985-3

DO - 10.1007/s00339-004-2985-3

M3 - Article

SN - 0947-8396

VL - 80

SP - 9

EP - 12

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 1

ER -

Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy

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Keywords

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