We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.
|Number of pages||3|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - Jan 2005|
- optical transitions
- phase-separated quantum-dot states
- molecular beam epitaxy
Sun, H. D., Calvez, S., Dawson, M. D., Gilet, P., Grenouillet, L., & Million, A. (2005). Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy. Applied Physics A: Materials Science and Processing, 80(1), 9-12. https://doi.org/10.1007/s00339-004-2985-3