Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy

H.D. Sun, S. Calvez, M.D. Dawson, P. Gilet, L. Grenouillet, A. Million

Research output: Contribution to journalArticle

Abstract

We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.
Original languageEnglish
Pages (from-to)9-12
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume80
Issue number1
DOIs
Publication statusPublished - Jan 2005

    Fingerprint

Keywords

  • photoluminescence
  • GaInNAs/GaAs
  • optical transitions
  • phase-separated quantum-dot states
  • molecular beam epitaxy

Cite this