Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy

H.D. Sun, S. Calvez, M.D. Dawson, P. Gilet, L. Grenouillet, A. Million

Research output: Contribution to journalArticle

Abstract

We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.
LanguageEnglish
Pages9-12
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume80
Issue number1
DOIs
Publication statusPublished - Jan 2005

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Molecular beam epitaxy
Semiconductor quantum wells
Photoluminescence
molecular beam epitaxy
quantum wells
photoluminescence
Wavelength
Optical transitions
optical transition
wavelengths
Semiconductor quantum dots
excitation
quantum dots
Temperature
room temperature
temperature
gallium arsenide

Keywords

  • photoluminescence
  • GaInNAs/GaAs
  • optical transitions
  • phase-separated quantum-dot states
  • molecular beam epitaxy

Cite this

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title = "Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy",
abstract = "We report the photoluminescence characteristics of molecular beam epitaxy grown GaInNAs/GaAs single quantum wells that emit near 1.5-m wavelength at room temperature. The photoluminescence properties were investigated by varying the excitation wavelength, excitation intensity and sample temperature. It is found that the spectroscopic properties in the 1.5-m material are quite different from those of similar GaInNAs/GaAs structures emitting at 1.2 m. The related radiative mechanisms in the 1.5-m samples are interpreted in terms of the optical transitions of phase-separated quantum-dot states rather than quantum-well states.",
keywords = "photoluminescence, GaInNAs/GaAs, optical transitions, phase-separated quantum-dot states, molecular beam epitaxy",
author = "H.D. Sun and S. Calvez and M.D. Dawson and P. Gilet and L. Grenouillet and A. Million",
year = "2005",
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Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy. / Sun, H.D.; Calvez, S.; Dawson, M.D.; Gilet, P.; Grenouillet, L.; Million, A.

In: Applied Physics A: Materials Science and Processing, Vol. 80, No. 1, 01.2005, p. 9-12.

Research output: Contribution to journalArticle

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T1 - Photoluminescence characteristics of 1.5um Ga(1-x)InxNyAs(1-y) / GaAs structures grown by molecular beam epitaxy

AU - Sun, H.D.

AU - Calvez, S.

AU - Dawson, M.D.

AU - Gilet, P.

AU - Grenouillet, L.

AU - Million, A.

PY - 2005/1

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KW - photoluminescence

KW - GaInNAs/GaAs

KW - optical transitions

KW - phase-separated quantum-dot states

KW - molecular beam epitaxy

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