Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness

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Abstract

Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using photoluminescence spectroscopy. Data are presented from two series of samples designed to promote energy transfer to luminescent species on the surface. Improvements in the optical properties as the GaN cap thickness increases from 2.5 to 15 nm are accompanied by clear changes in the intensity of the LO-phonon satellites. Analysis of the strength of successive phonon satellites and the associated Huang-Rhys factors indicates that the amount of localization of the excitons is increased for the thinner cap samples. Surface depletion fields are also considered.
LanguageEnglish
Article number101910
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number10
DOIs
Publication statusPublished - 4 Sep 2006

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caps
quantum wells
photoluminescence
depletion
energy transfer
excitons
optical properties
spectroscopy

Keywords

  • indium compounds
  • phonon-exciton interactions
  • photoluminescence
  • semiconductor quantum wells
  • III-V semiconductors
  • gallium compounds

Cite this

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title = "Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness",
abstract = "Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using photoluminescence spectroscopy. Data are presented from two series of samples designed to promote energy transfer to luminescent species on the surface. Improvements in the optical properties as the GaN cap thickness increases from 2.5 to 15 nm are accompanied by clear changes in the intensity of the LO-phonon satellites. Analysis of the strength of successive phonon satellites and the associated Huang-Rhys factors indicates that the amount of localization of the excitons is increased for the thinner cap samples. Surface depletion fields are also considered.",
keywords = "indium compounds , phonon-exciton interactions, photoluminescence, semiconductor quantum wells, III-V semiconductors, gallium compounds",
author = "L.T. Tan and R.W. Martin and K.P. O'Donnell and I.M. Watson",
year = "2006",
month = "9",
day = "4",
doi = "10.1063/1.2345246",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
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TY - JOUR

T1 - Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness

AU - Tan, L.T.

AU - Martin, R.W.

AU - O'Donnell, K.P.

AU - Watson, I.M.

PY - 2006/9/4

Y1 - 2006/9/4

N2 - Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using photoluminescence spectroscopy. Data are presented from two series of samples designed to promote energy transfer to luminescent species on the surface. Improvements in the optical properties as the GaN cap thickness increases from 2.5 to 15 nm are accompanied by clear changes in the intensity of the LO-phonon satellites. Analysis of the strength of successive phonon satellites and the associated Huang-Rhys factors indicates that the amount of localization of the excitons is increased for the thinner cap samples. Surface depletion fields are also considered.

AB - Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using photoluminescence spectroscopy. Data are presented from two series of samples designed to promote energy transfer to luminescent species on the surface. Improvements in the optical properties as the GaN cap thickness increases from 2.5 to 15 nm are accompanied by clear changes in the intensity of the LO-phonon satellites. Analysis of the strength of successive phonon satellites and the associated Huang-Rhys factors indicates that the amount of localization of the excitons is increased for the thinner cap samples. Surface depletion fields are also considered.

KW - indium compounds

KW - phonon-exciton interactions

KW - photoluminescence

KW - semiconductor quantum wells

KW - III-V semiconductors

KW - gallium compounds

U2 - 10.1063/1.2345246

DO - 10.1063/1.2345246

M3 - Article

VL - 89

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 101910

ER -