Photolithographic patterning of conducting polyaniline films via flash welding

Rowan D. Henderson; Michael C. Breadmore; Lynn Dennany; Rosanne M. Guijt; Paul R. Haddad; Emily F. Hilder; Peter C. Innis; Trevor W. Lewis; Gordon G. Wallace; Australian Centre for Research On Separation Science ACROSS, School of Chemistry, University of Tasmania, Hobart Australia; School of Chemistry, University of Tasmania, Launceston, Australia; ARC Centre of Excellence for Electromaterials Science, Intelligent Polymer Research Institute, University of Wollongong, Australia

doi:10.1016/j.synthmet.2010.04.018

Photolithographic patterning of conducting polyaniline films via flash welding

Rowan D. Henderson, Michael C. Breadmore, Lynn Dennany, Rosanne M. Guijt, Paul R. Haddad, Emily F. Hilder, Peter C. Innis, Trevor W. Lewis, Gordon G. Wallace, Australian Centre for Research On Separation Science ACROSS, School of Chemistry, University of Tasmania, Hobart Australia, School of Chemistry, University of Tasmania, Launceston, Australia, ARC Centre of Excellence for Electromaterials Science, Intelligent Polymer Research Institute, University of Wollongong, Australia

Pure And Applied Chemistry

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Abstract

In this work, two significant advances in photolithographic patterning of polyaniline (PANI) films are reported. Firstly, flash welding was enhanced through the use of polymeric substrates, enabling complete penetration of the welding of PANI films with thicknesses ranging from 5 to over 14 mu m, significantly thicker than reported previously. Masking of parts of the PANI films during flash welding enabled the formation of adjacent conducting and insulating regions as the welding changes the electrical properties of the film. Raman spectroscopy was used to determine the sharpness of these edges, and indicated that the interface between the flash welded and masked regions of the PANI films was typically less than 15 mu m wide. Secondly, using longpass filters, light with a wavelength less than 570 nm was found not to contribute to the welding process. This was confirmed by the use of a 635 nm laser diode for welding the PANI films. This novel approach enabled patterning of PANI films using a direct writing technique with a narrow wavelength light source.

Original language	English
Pages (from-to)	1405-1409
Number of pages	5
Journal	Synthetic Metals
Volume	160
Issue number	13-14
DOIs	https://doi.org/10.1016/j.synthmet.2010.04.018
Publication status	Published - Jul 2010

Keywords

polyaniline
patterning
flash welding

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10.1016/j.synthmet.2010.04.018

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Henderson, R. D., Breadmore, M. C., Dennany, L., Guijt, R. M., Haddad, P. R., Hilder, E. F., Innis, P. C., Lewis, T. W., Wallace, G. G., Australian Centre for Research On Separation Science ACROSS, School of Chemistry, University of Tasmania, Hobart Australia, School of Chemistry, University of Tasmania, Launceston, Australia, & ARC Centre of Excellence for Electromaterials Science, Intelligent Polymer Research Institute, University of Wollongong, Australia (2010). Photolithographic patterning of conducting polyaniline films via flash welding. Synthetic Metals, 160(13-14), 1405-1409. https://doi.org/10.1016/j.synthmet.2010.04.018

@article{13c97421b30e4978ab448235f9a309ef,

title = "Photolithographic patterning of conducting polyaniline films via flash welding",

abstract = "In this work, two significant advances in photolithographic patterning of polyaniline (PANI) films are reported. Firstly, flash welding was enhanced through the use of polymeric substrates, enabling complete penetration of the welding of PANI films with thicknesses ranging from 5 to over 14 mu m, significantly thicker than reported previously. Masking of parts of the PANI films during flash welding enabled the formation of adjacent conducting and insulating regions as the welding changes the electrical properties of the film. Raman spectroscopy was used to determine the sharpness of these edges, and indicated that the interface between the flash welded and masked regions of the PANI films was typically less than 15 mu m wide. Secondly, using longpass filters, light with a wavelength less than 570 nm was found not to contribute to the welding process. This was confirmed by the use of a 635 nm laser diode for welding the PANI films. This novel approach enabled patterning of PANI films using a direct writing technique with a narrow wavelength light source.",

keywords = "polyaniline, patterning, flash welding",

author = "Henderson, {Rowan D.} and Breadmore, {Michael C.} and Lynn Dennany and Guijt, {Rosanne M.} and Haddad, {Paul R.} and Hilder, {Emily F.} and Innis, {Peter C.} and Lewis, {Trevor W.} and Wallace, {Gordon G.} and {Australian Centre for Research On Separation Science ACROSS, School of Chemistry, University of Tasmania, Hobart Australia} and {School of Chemistry, University of Tasmania, Launceston, Australia} and {ARC Centre of Excellence for Electromaterials Science, Intelligent Polymer Research Institute, University of Wollongong, Australia}",

year = "2010",

month = jul,

doi = "10.1016/j.synthmet.2010.04.018",

language = "English",

volume = "160",

pages = "1405--1409",

journal = "Synthetic Metals",

issn = "0379-6779",

number = "13-14",

}

Henderson, RD, Breadmore, MC, Dennany, L, Guijt, RM, Haddad, PR, Hilder, EF, Innis, PC, Lewis, TW, Wallace, GG, Australian Centre for Research On Separation Science ACROSS, School of Chemistry, University of Tasmania, Hobart Australia, School of Chemistry, University of Tasmania, Launceston, Australia & ARC Centre of Excellence for Electromaterials Science, Intelligent Polymer Research Institute, University of Wollongong, Australia 2010, 'Photolithographic patterning of conducting polyaniline films via flash welding', Synthetic Metals, vol. 160, no. 13-14, pp. 1405-1409. https://doi.org/10.1016/j.synthmet.2010.04.018

TY - JOUR

T1 - Photolithographic patterning of conducting polyaniline films via flash welding

AU - Henderson, Rowan D.

AU - Breadmore, Michael C.

AU - Dennany, Lynn

AU - Guijt, Rosanne M.

AU - Haddad, Paul R.

AU - Hilder, Emily F.

AU - Innis, Peter C.

AU - Lewis, Trevor W.

AU - Wallace, Gordon G.

AU - Australian Centre for Research On Separation Science ACROSS, School of Chemistry, University of Tasmania, Hobart Australia

AU - School of Chemistry, University of Tasmania, Launceston, Australia

AU - ARC Centre of Excellence for Electromaterials Science, Intelligent Polymer Research Institute, University of Wollongong, Australia

PY - 2010/7

Y1 - 2010/7

N2 - In this work, two significant advances in photolithographic patterning of polyaniline (PANI) films are reported. Firstly, flash welding was enhanced through the use of polymeric substrates, enabling complete penetration of the welding of PANI films with thicknesses ranging from 5 to over 14 mu m, significantly thicker than reported previously. Masking of parts of the PANI films during flash welding enabled the formation of adjacent conducting and insulating regions as the welding changes the electrical properties of the film. Raman spectroscopy was used to determine the sharpness of these edges, and indicated that the interface between the flash welded and masked regions of the PANI films was typically less than 15 mu m wide. Secondly, using longpass filters, light with a wavelength less than 570 nm was found not to contribute to the welding process. This was confirmed by the use of a 635 nm laser diode for welding the PANI films. This novel approach enabled patterning of PANI films using a direct writing technique with a narrow wavelength light source.

AB - In this work, two significant advances in photolithographic patterning of polyaniline (PANI) films are reported. Firstly, flash welding was enhanced through the use of polymeric substrates, enabling complete penetration of the welding of PANI films with thicknesses ranging from 5 to over 14 mu m, significantly thicker than reported previously. Masking of parts of the PANI films during flash welding enabled the formation of adjacent conducting and insulating regions as the welding changes the electrical properties of the film. Raman spectroscopy was used to determine the sharpness of these edges, and indicated that the interface between the flash welded and masked regions of the PANI films was typically less than 15 mu m wide. Secondly, using longpass filters, light with a wavelength less than 570 nm was found not to contribute to the welding process. This was confirmed by the use of a 635 nm laser diode for welding the PANI films. This novel approach enabled patterning of PANI films using a direct writing technique with a narrow wavelength light source.

KW - polyaniline

KW - patterning

KW - flash welding

U2 - 10.1016/j.synthmet.2010.04.018

DO - 10.1016/j.synthmet.2010.04.018

M3 - Article

SN - 0379-6779

VL - 160

SP - 1405

EP - 1409

JO - Synthetic Metals

JF - Synthetic Metals

IS - 13-14

ER -

Photolithographic patterning of conducting polyaniline films via flash welding

Abstract

Keywords

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