Photo-assisted evolution of the photoluminescence spectrum of porous silicon immersed in hydrofluoric acid

M. Davison, U. M. Noor, L. Berlouis, D. Uttamchandani, K. P. O'Donnell

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Rapid changes in photoluminescence (PL) intensity and blue shifts of typically 100 nm have been measured for porous silicon wetted by hydrofluoric acid. The differences between continuous and interrupted PL excitation show that the process is not solely limited by photo-activation. In contrast, the effect of potassium hydroxide, a second silicon etchant, is to reduce PL intensity without any significant blue shift. These experiments show the importance of surface chemistry in PL of wet porous silicon and are interpreted in terms of surface termination by different species.

Original languageEnglish
Pages (from-to)303-305
Number of pages3
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 15 Apr 1996



  • etching
  • luminescence
  • silicon
  • wetting

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