Persistent phosphorescence in Ce-doped Lu2SiO5

Mitsuo Yamaga, Yusuke Ohsumi, Tomomi Nakayama, Thomas P. J. Han

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Oxide crystals doped with Ce3+ are useful in areas such as scintillators and passive optical sources. Scintillator materials require high light-yield and fast luminescence decay time. However, when the crystalline quality is degraded by defects created during the crystal growth process, afterglow from the crystals is observed. The persistent phosphorescence observed in Lu2SiO5 doped with Ce3+ ions has been investigated in detail and a model is proposed to explain the mechanism responsible for the phosphorescence.

LanguageEnglish
Pages413-419
Number of pages7
JournalOptical Materials Express
Volume2
Issue number4
DOIs
Publication statusPublished - 1 Apr 2012

Fingerprint

Phosphorescence
Phosphors
Crystals
Crystallization
Crystal growth
Oxides
Light sources
Luminescence
Ions
Crystalline materials
Defects
dilutetium silicon pentaoxide

Keywords

  • oxide crystals
  • passive optical sources
  • luminescence
  • phosphorescence

Cite this

Yamaga, M., Ohsumi, Y., Nakayama, T., & Han, T. P. J. (2012). Persistent phosphorescence in Ce-doped Lu2SiO5. Optical Materials Express, 2(4), 413-419. https://doi.org/10.1364/OME.2.000413
Yamaga, Mitsuo ; Ohsumi, Yusuke ; Nakayama, Tomomi ; Han, Thomas P. J. / Persistent phosphorescence in Ce-doped Lu2SiO5. In: Optical Materials Express. 2012 ; Vol. 2, No. 4. pp. 413-419.
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Yamaga, M, Ohsumi, Y, Nakayama, T & Han, TPJ 2012, 'Persistent phosphorescence in Ce-doped Lu2SiO5' Optical Materials Express, vol. 2, no. 4, pp. 413-419. https://doi.org/10.1364/OME.2.000413

Persistent phosphorescence in Ce-doped Lu2SiO5. / Yamaga, Mitsuo; Ohsumi, Yusuke; Nakayama, Tomomi; Han, Thomas P. J.

In: Optical Materials Express, Vol. 2, No. 4, 01.04.2012, p. 413-419.

Research output: Contribution to journalArticle

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