Performance comparison of GaInNAs vertical cavity semiconductor amplifiers

N. Laurand, S. Calvez, M.D. Dawson, A.C. Bryce, T. Jouhti, J. Kontinnen, M. Pessa

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This paper reports on theoretical and experimental investigations of the influence of the number of GaInNAs quantum wells (QWs) on performance of 1.3-/spl mu/m vertical-cavity semiconductor optical amplifiers (VCSOAs). Full characterization is carried out for two optically pumped VCSOAs with 6 and 15 QWs in the active layer. The 15-QW amplifier is found to be more efficient for amplification purposes but the highest gain to date was obtained for a 6-QW GaInNAs VCSOA, 19-dB on-chip gain in single-mode operation, having a top mirror reflectivity of 97.7%. At high-gain and for low enough reflectivity, the intrinsic noise figure is smaller than 5 dB.
Original languageEnglish
Pages (from-to)642-649
Number of pages7
JournalIEEE Journal of Quantum Electronics
Volume41
Issue number5
DOIs
Publication statusPublished - May 2005

Keywords

  • GaInNAs quantum wells
  • surface emitting lasers
  • vertical cavity amplifiers

Fingerprint Dive into the research topics of 'Performance comparison of GaInNAs vertical cavity semiconductor amplifiers'. Together they form a unique fingerprint.

  • Cite this