TY - JOUR
T1 - Performance comparison of GaInNAs vertical cavity semiconductor amplifiers
AU - Laurand, N.
AU - Calvez, S.
AU - Dawson, M.D.
AU - Bryce, A.C.
AU - Jouhti, T.
AU - Kontinnen, J.
AU - Pessa, M.
PY - 2005/5
Y1 - 2005/5
N2 - This paper reports on theoretical and experimental investigations of the influence of the number of GaInNAs quantum wells (QWs) on performance of 1.3-/spl mu/m vertical-cavity semiconductor optical amplifiers (VCSOAs). Full characterization is carried out for two optically pumped VCSOAs with 6 and 15 QWs in the active layer. The 15-QW amplifier is found to be more efficient for amplification purposes but the highest gain to date was obtained for a 6-QW GaInNAs VCSOA, 19-dB on-chip gain in single-mode operation, having a top mirror reflectivity of 97.7%. At high-gain and for low enough reflectivity, the intrinsic noise figure is smaller than 5 dB.
AB - This paper reports on theoretical and experimental investigations of the influence of the number of GaInNAs quantum wells (QWs) on performance of 1.3-/spl mu/m vertical-cavity semiconductor optical amplifiers (VCSOAs). Full characterization is carried out for two optically pumped VCSOAs with 6 and 15 QWs in the active layer. The 15-QW amplifier is found to be more efficient for amplification purposes but the highest gain to date was obtained for a 6-QW GaInNAs VCSOA, 19-dB on-chip gain in single-mode operation, having a top mirror reflectivity of 97.7%. At high-gain and for low enough reflectivity, the intrinsic noise figure is smaller than 5 dB.
KW - GaInNAs quantum wells
KW - surface emitting lasers
KW - vertical cavity amplifiers
UR - http://www.10.1109/JQE.2005.844176
U2 - 10.1109/JQE.2005.844176
DO - 10.1109/JQE.2005.844176
M3 - Article
VL - 41
SP - 642
EP - 649
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 5
ER -