Performance comparison of GaInNAs vertical cavity semiconductor amplifiers

N. Laurand; S. Calvez; M.D. Dawson; A.C. Bryce; T. Jouhti; J. Kontinnen; M. Pessa

doi:10.1109/JQE.2005.844176

Performance comparison of GaInNAs vertical cavity semiconductor amplifiers

N. Laurand, S. Calvez, M.D. Dawson, A.C. Bryce, T. Jouhti, J. Kontinnen, M. Pessa

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

This paper reports on theoretical and experimental investigations of the influence of the number of GaInNAs quantum wells (QWs) on performance of 1.3-/spl mu/m vertical-cavity semiconductor optical amplifiers (VCSOAs). Full characterization is carried out for two optically pumped VCSOAs with 6 and 15 QWs in the active layer. The 15-QW amplifier is found to be more efficient for amplification purposes but the highest gain to date was obtained for a 6-QW GaInNAs VCSOA, 19-dB on-chip gain in single-mode operation, having a top mirror reflectivity of 97.7%. At high-gain and for low enough reflectivity, the intrinsic noise figure is smaller than 5 dB.

Original language	English
Pages (from-to)	642-649
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	41
Issue number	5
DOIs	https://doi.org/10.1109/JQE.2005.844176
Publication status	Published - May 2005

Keywords

GaInNAs quantum wells
surface emitting lasers
vertical cavity amplifiers

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10.1109/JQE.2005.844176

http://www.10.1109/JQE.2005.844176

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Laurand, N., Calvez, S., Dawson, M. D., Bryce, A. C., Jouhti, T., Kontinnen, J., & Pessa, M. (2005). Performance comparison of GaInNAs vertical cavity semiconductor amplifiers. IEEE Journal of Quantum Electronics, 41(5), 642-649. https://doi.org/10.1109/JQE.2005.844176

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abstract = "This paper reports on theoretical and experimental investigations of the influence of the number of GaInNAs quantum wells (QWs) on performance of 1.3-/spl mu/m vertical-cavity semiconductor optical amplifiers (VCSOAs). Full characterization is carried out for two optically pumped VCSOAs with 6 and 15 QWs in the active layer. The 15-QW amplifier is found to be more efficient for amplification purposes but the highest gain to date was obtained for a 6-QW GaInNAs VCSOA, 19-dB on-chip gain in single-mode operation, having a top mirror reflectivity of 97.7{\%}. At high-gain and for low enough reflectivity, the intrinsic noise figure is smaller than 5 dB.",

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AB - This paper reports on theoretical and experimental investigations of the influence of the number of GaInNAs quantum wells (QWs) on performance of 1.3-/spl mu/m vertical-cavity semiconductor optical amplifiers (VCSOAs). Full characterization is carried out for two optically pumped VCSOAs with 6 and 15 QWs in the active layer. The 15-QW amplifier is found to be more efficient for amplification purposes but the highest gain to date was obtained for a 6-QW GaInNAs VCSOA, 19-dB on-chip gain in single-mode operation, having a top mirror reflectivity of 97.7%. At high-gain and for low enough reflectivity, the intrinsic noise figure is smaller than 5 dB.

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