This paper reports on theoretical and experimental investigations of the influence of the number of GaInNAs quantum wells (QWs) on performance of 1.3-/spl mu/m vertical-cavity semiconductor optical amplifiers (VCSOAs). Full characterization is carried out for two optically pumped VCSOAs with 6 and 15 QWs in the active layer. The 15-QW amplifier is found to be more efficient for amplification purposes but the highest gain to date was obtained for a 6-QW GaInNAs VCSOA, 19-dB on-chip gain in single-mode operation, having a top mirror reflectivity of 97.7%. At high-gain and for low enough reflectivity, the intrinsic noise figure is smaller than 5 dB.
- GaInNAs quantum wells
- surface emitting lasers
- vertical cavity amplifiers
Laurand, N., Calvez, S., Dawson, M. D., Bryce, A. C., Jouhti, T., Kontinnen, J., & Pessa, M. (2005). Performance comparison of GaInNAs vertical cavity semiconductor amplifiers. IEEE Journal of Quantum Electronics, 41(5), 642-649. https://doi.org/10.1109/JQE.2005.844176