Peculiarities in the pressure dependence of photoluminescence in InAlN

Agata Kaminska, Piotr Nowakowski, Grzegorz Staszczak, Tadeusz Suski, Andrzej Suchocki, Jean François Carlin, Nicolas Grandjean, Robert Martin, Akio Yamamoto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Studies of ambient-pressure and high-pressure behavior of photoluminescence (PL) for series of InxAl1-xN layers are presented. The measured evolution of PL energy (EPL) with x is characterized by a clear decrease of EPL and exhibits a strong bowing. This dependence corresponds to the predictions of ab initio calculations of the band-gap energy changes EG with x. However, values of EPL are clearly lower than EG, for 0<x<0.3. For higher x, the measured EPL follows well the calculated EG. The experimentally determined pressure coefficient of PL energy (dEPL/dp) shows a complicated behavior for alloys with different In-content. We found a strong reduction of dEPL/dp for 0<x<0.3 and a relatively constant magnitude of this coefficient for higher x. Moreover, for the lower x region, we observed dEPL/dp that can differ even by a factor two in samples with nominally very similar In-content. The general tendency in dEPL/dp evolution with x corresponds to lower values than calculated dEG/dp for alloys with non-uniform indium distribution. We propose two not necessary independent explanations of these experimental findings. First, due to non-uniform In distribution (induced, e.g. by defects or non-homogeneous strain) both EPL and dEPL/dp are reduced. Second, a similar behavior results from an involvement of the localized states, whose formation and contribution to PL can be induced by strain and/or native defects. In both hypotheses, the strain/defect density can significantly change around x≈0.18 where InxAl1-xN layers are lattice matched to GaN template.

LanguageEnglish
Pages677-682
Number of pages6
JournalPhysica Status Solidi B
Volume250
Issue number4
DOIs
Publication statusPublished - 1 Apr 2013

Fingerprint

pressure dependence
Photoluminescence
photoluminescence
Bending (forming)
Defects
Indium
energy
Defect density
defects
Energy gap
coefficients
indium
tendencies
templates
predictions

Keywords

  • high-pressure spectroscopy
  • photoluminescence
  • pressure coefficients
  • ternary nitride alloys
  • InAlN

Cite this

Kaminska, A., Nowakowski, P., Staszczak, G., Suski, T., Suchocki, A., Carlin, J. F., ... Yamamoto, A. (2013). Peculiarities in the pressure dependence of photoluminescence in InAlN. Physica Status Solidi B, 250(4), 677-682. https://doi.org/10.1002/pssb.201200652
Kaminska, Agata ; Nowakowski, Piotr ; Staszczak, Grzegorz ; Suski, Tadeusz ; Suchocki, Andrzej ; Carlin, Jean François ; Grandjean, Nicolas ; Martin, Robert ; Yamamoto, Akio. / Peculiarities in the pressure dependence of photoluminescence in InAlN. In: Physica Status Solidi B. 2013 ; Vol. 250, No. 4. pp. 677-682.
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Kaminska, A, Nowakowski, P, Staszczak, G, Suski, T, Suchocki, A, Carlin, JF, Grandjean, N, Martin, R & Yamamoto, A 2013, 'Peculiarities in the pressure dependence of photoluminescence in InAlN' Physica Status Solidi B, vol. 250, no. 4, pp. 677-682. https://doi.org/10.1002/pssb.201200652

Peculiarities in the pressure dependence of photoluminescence in InAlN. / Kaminska, Agata; Nowakowski, Piotr; Staszczak, Grzegorz; Suski, Tadeusz; Suchocki, Andrzej; Carlin, Jean François; Grandjean, Nicolas; Martin, Robert; Yamamoto, Akio.

In: Physica Status Solidi B, Vol. 250, No. 4, 01.04.2013, p. 677-682.

Research output: Contribution to journalArticle

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T1 - Peculiarities in the pressure dependence of photoluminescence in InAlN

AU - Kaminska, Agata

AU - Nowakowski, Piotr

AU - Staszczak, Grzegorz

AU - Suski, Tadeusz

AU - Suchocki, Andrzej

AU - Carlin, Jean François

AU - Grandjean, Nicolas

AU - Martin, Robert

AU - Yamamoto, Akio

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N2 - Studies of ambient-pressure and high-pressure behavior of photoluminescence (PL) for series of InxAl1-xN layers are presented. The measured evolution of PL energy (EPL) with x is characterized by a clear decrease of EPL and exhibits a strong bowing. This dependence corresponds to the predictions of ab initio calculations of the band-gap energy changes EG with x. However, values of EPL are clearly lower than EG, for 0PL follows well the calculated EG. The experimentally determined pressure coefficient of PL energy (dEPL/dp) shows a complicated behavior for alloys with different In-content. We found a strong reduction of dEPL/dp for 0PL/dp that can differ even by a factor two in samples with nominally very similar In-content. The general tendency in dEPL/dp evolution with x corresponds to lower values than calculated dEG/dp for alloys with non-uniform indium distribution. We propose two not necessary independent explanations of these experimental findings. First, due to non-uniform In distribution (induced, e.g. by defects or non-homogeneous strain) both EPL and dEPL/dp are reduced. Second, a similar behavior results from an involvement of the localized states, whose formation and contribution to PL can be induced by strain and/or native defects. In both hypotheses, the strain/defect density can significantly change around x≈0.18 where InxAl1-xN layers are lattice matched to GaN template.

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KW - photoluminescence

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Kaminska A, Nowakowski P, Staszczak G, Suski T, Suchocki A, Carlin JF et al. Peculiarities in the pressure dependence of photoluminescence in InAlN. Physica Status Solidi B. 2013 Apr 1;250(4):677-682. https://doi.org/10.1002/pssb.201200652