Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers

T. Kim, R.W. Martin, I.M. Watson, M.D. Dawson, T.F. Krauss, J.H. Marsh, R.M. De La Rue

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The performance of GaN-based surface-emitting lasers may be greatly improved by the use of highly-reflecting SiO2/ZrO2 multilayers for both cavity mirrors. We consider some of the limitations of GaN/Al(Ga)N multilayer mirrors and discuss alternative routes for incorporating dielectric multilayers within InGaN/GaN quantum well surface-emitting devices, using lateral epitaxial overgrowth. The use of lateral overgrowth techniques promise the benefit of reduced dislocation densities within the active region. The use of single layer lift-off techniques for the fabrication of patterned mirror templates suitable for overgrowth on GaN-on-sapphire is described.
Original languageEnglish
Pages (from-to)245-247
Number of pages2
JournalMaterials Science and Engineering B
Volume82
Issue number1-3
DOIs
Publication statusPublished - 22 May 2001

Keywords

  • nitride semiconductors
  • VCSELs
  • microcavities
  • oxide mirrors

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