Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers

T. Kim, R.W. Martin, I.M. Watson, M.D. Dawson, T.F. Krauss, J.H. Marsh, R.M. De La Rue

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The performance of GaN-based surface-emitting lasers may be greatly improved by the use of highly-reflecting SiO2/ZrO2 multilayers for both cavity mirrors. We consider some of the limitations of GaN/Al(Ga)N multilayer mirrors and discuss alternative routes for incorporating dielectric multilayers within InGaN/GaN quantum well surface-emitting devices, using lateral epitaxial overgrowth. The use of lateral overgrowth techniques promise the benefit of reduced dislocation densities within the active region. The use of single layer lift-off techniques for the fabrication of patterned mirror templates suitable for overgrowth on GaN-on-sapphire is described.
LanguageEnglish
Pages245-247
Number of pages2
JournalMaterials Science and Engineering B
Volume82
Issue number1-3
DOIs
Publication statusPublished - 22 May 2001

Fingerprint

Multilayers
mirrors
Lasers
lasers
Aluminum Oxide
Surface emitting lasers
surface emitting lasers
Sapphire
Semiconductor quantum wells
sapphire
Mirrors
templates
routes
quantum wells
Fabrication
cavities
fabrication

Keywords

  • nitride semiconductors
  • VCSELs
  • microcavities
  • oxide mirrors

Cite this

Kim, T. ; Martin, R.W. ; Watson, I.M. ; Dawson, M.D. ; Krauss, T.F. ; Marsh, J.H. ; De La Rue, R.M. / Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers. In: Materials Science and Engineering B. 2001 ; Vol. 82, No. 1-3. pp. 245-247.
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Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers. / Kim, T.; Martin, R.W.; Watson, I.M.; Dawson, M.D.; Krauss, T.F.; Marsh, J.H.; De La Rue, R.M.

In: Materials Science and Engineering B, Vol. 82, No. 1-3, 22.05.2001, p. 245-247.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers

AU - Kim, T.

AU - Martin, R.W.

AU - Watson, I.M.

AU - Dawson, M.D.

AU - Krauss, T.F.

AU - Marsh, J.H.

AU - De La Rue, R.M.

PY - 2001/5/22

Y1 - 2001/5/22

N2 - The performance of GaN-based surface-emitting lasers may be greatly improved by the use of highly-reflecting SiO2/ZrO2 multilayers for both cavity mirrors. We consider some of the limitations of GaN/Al(Ga)N multilayer mirrors and discuss alternative routes for incorporating dielectric multilayers within InGaN/GaN quantum well surface-emitting devices, using lateral epitaxial overgrowth. The use of lateral overgrowth techniques promise the benefit of reduced dislocation densities within the active region. The use of single layer lift-off techniques for the fabrication of patterned mirror templates suitable for overgrowth on GaN-on-sapphire is described.

AB - The performance of GaN-based surface-emitting lasers may be greatly improved by the use of highly-reflecting SiO2/ZrO2 multilayers for both cavity mirrors. We consider some of the limitations of GaN/Al(Ga)N multilayer mirrors and discuss alternative routes for incorporating dielectric multilayers within InGaN/GaN quantum well surface-emitting devices, using lateral epitaxial overgrowth. The use of lateral overgrowth techniques promise the benefit of reduced dislocation densities within the active region. The use of single layer lift-off techniques for the fabrication of patterned mirror templates suitable for overgrowth on GaN-on-sapphire is described.

KW - nitride semiconductors

KW - VCSELs

KW - microcavities

KW - oxide mirrors

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DO - 10.1016/S0921-5107(00)00782-0

M3 - Article

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