Abstract
We report passively Q-switched operation of a diode-pumped Pr:YLF laser using an AlInGaP on GaAs SEmiconductor Saturable Absorber Mirror. Q-switched pulses with 145ns duration and 23mW average output power at 639.5nm are obtained.
Original language | English |
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Title of host publication | CLEO: 2011 - Laser Science to Photonic Applications |
Place of Publication | Piscataway, N.J. |
Publisher | IEEE |
Number of pages | 2 |
ISBN (Print) | 978-1-4577-1223-4 |
DOIs | |
Publication status | Published - 14 Jul 2011 |
Event | 2011 Conference on Lasers and Electro-Optics, CLEO 2011 - Baltimore, MD, United States Duration: 1 May 2011 → 6 May 2011 |
Conference
Conference | 2011 Conference on Lasers and Electro-Optics, CLEO 2011 |
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Country/Territory | United States |
City | Baltimore, MD |
Period | 1/05/11 → 6/05/11 |
Keywords
- semiconductor lasers
- fiber lasers
- gallium nitride
- laser excitation
- semiconductor diodes
- power lasers