Passively Q-switched Pr:YLF laser

V. G. Savitski, I. M. Ranieri, A. B. Krysa, S. Calvez

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

13 Citations (Scopus)

Abstract

We report passively Q-switched operation of a diode-pumped Pr:YLF laser using an AlInGaP on GaAs SEmiconductor Saturable Absorber Mirror. Q-switched pulses with 145ns duration and 23mW average output power at 639.5nm are obtained.
Original languageEnglish
Title of host publicationCLEO: 2011 - Laser Science to Photonic Applications
Place of PublicationPiscataway, N.J.
PublisherIEEE
Number of pages2
ISBN (Print)978-1-4577-1223-4
DOIs
Publication statusPublished - 14 Jul 2011
Event2011 Conference on Lasers and Electro-Optics, CLEO 2011 - Baltimore, MD, United States
Duration: 1 May 20116 May 2011

Conference

Conference2011 Conference on Lasers and Electro-Optics, CLEO 2011
CountryUnited States
CityBaltimore, MD
Period1/05/116/05/11

Keywords

  • semiconductor lasers
  • fiber lasers
  • gallium nitride
  • laser excitation
  • semiconductor diodes
  • power lasers

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