Passively Q-switched Pr:YLF laser

V. G. Savitski; I. M. Ranieri; A. B. Krysa; S. Calvez

doi:10.1364/CLEO_SI.2011.CMB7

Passively Q-switched Pr:YLF laser

V. G. Savitski, I. M. Ranieri, A. B. Krysa, S. Calvez

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

17 Citations (Scopus)

Abstract

We report passively Q-switched operation of a diode-pumped Pr:YLF laser using an AlInGaP on GaAs SEmiconductor Saturable Absorber Mirror. Q-switched pulses with 145ns duration and 23mW average output power at 639.5nm are obtained.

Original language	English
Title of host publication	CLEO: 2011 - Laser Science to Photonic Applications
Place of Publication	Piscataway, N.J.
Publisher	IEEE
Number of pages	2
ISBN (Print)	978-1-4577-1223-4
DOIs	https://doi.org/10.1364/CLEO_SI.2011.CMB7
Publication status	Published - 14 Jul 2011
Event	2011 Conference on Lasers and Electro-Optics, CLEO 2011 - Baltimore, MD, United States Duration: 1 May 2011 → 6 May 2011

Conference

Conference	2011 Conference on Lasers and Electro-Optics, CLEO 2011
Country/Territory	United States
City	Baltimore, MD
Period	1/05/11 → 6/05/11

Keywords

semiconductor lasers
fiber lasers
gallium nitride
laser excitation
semiconductor diodes
power lasers

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10.1364/CLEO_SI.2011.CMB7

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@inproceedings{42592256b00c4ae09c2bd9d15632c1f5,

title = "Passively Q-switched Pr:YLF laser",

abstract = "We report passively Q-switched operation of a diode-pumped Pr:YLF laser using an AlInGaP on GaAs SEmiconductor Saturable Absorber Mirror. Q-switched pulses with 145ns duration and 23mW average output power at 639.5nm are obtained.",

keywords = "semiconductor lasers, fiber lasers , gallium nitride , laser excitation, semiconductor diodes, power lasers",

author = "Savitski, {V. G.} and Ranieri, {I. M.} and Krysa, {A. B.} and S. Calvez",

year = "2011",

month = jul,

day = "14",

doi = "10.1364/CLEO_SI.2011.CMB7",

language = "English",

isbn = "978-1-4577-1223-4",

booktitle = "CLEO: 2011 - Laser Science to Photonic Applications",

publisher = "IEEE",

note = "2011 Conference on Lasers and Electro-Optics, CLEO 2011 ; Conference date: 01-05-2011 Through 06-05-2011",

}

TY - GEN

T1 - Passively Q-switched Pr:YLF laser

AU - Savitski, V. G.

AU - Ranieri, I. M.

AU - Krysa, A. B.

AU - Calvez, S.

PY - 2011/7/14

Y1 - 2011/7/14

N2 - We report passively Q-switched operation of a diode-pumped Pr:YLF laser using an AlInGaP on GaAs SEmiconductor Saturable Absorber Mirror. Q-switched pulses with 145ns duration and 23mW average output power at 639.5nm are obtained.

AB - We report passively Q-switched operation of a diode-pumped Pr:YLF laser using an AlInGaP on GaAs SEmiconductor Saturable Absorber Mirror. Q-switched pulses with 145ns duration and 23mW average output power at 639.5nm are obtained.

KW - semiconductor lasers

KW - fiber lasers

KW - gallium nitride

KW - laser excitation

KW - semiconductor diodes

KW - power lasers

UR - http://www.scopus.com/inward/record.url?scp=80052116163&partnerID=8YFLogxK

U2 - 10.1364/CLEO_SI.2011.CMB7

DO - 10.1364/CLEO_SI.2011.CMB7

M3 - Conference contribution book

AN - SCOPUS:80052116163

SN - 978-1-4577-1223-4

BT - CLEO: 2011 - Laser Science to Photonic Applications

PB - IEEE

CY - Piscataway, N.J.

T2 - 2011 Conference on Lasers and Electro-Optics, CLEO 2011

Y2 - 1 May 2011 through 6 May 2011

ER -

Passively Q-switched Pr:YLF laser

Abstract

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Keywords

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