Passive Q-switch operation of PbSe-doped glass at 2.1 μm

A. M. Malyarevich, V. G. Savitski, P. V. Prokoshin, K. V. Yumashev, A. A. Lipovskii

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Saturable absorber Q-switching of Ho3+:Y3Al5O12 laser at 2.1 μm using PbSe-doped phosphate glass was demonstrated. Q-switched pulses of 22 mJ in energy and 85 ns in duration were obtained. Temperature dependence of luminescence spectra of phosphate glasses doped with PbSe QDs of different sizes was analyzed.

Original languageEnglish
Pages (from-to)32-35
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4350
DOIs
Publication statusPublished - 1 Jan 2001
EventSolid State Lasers (Laser Optics 2000) - St. Petersburg, Russian Federation
Duration: 26 Jun 200030 Jun 2000

Keywords

  • lead selenide
  • Q-switch
  • semiconductor quantum dots
  • lead compounds
  • luminescence
  • Q switched lasers
  • Q switching
  • semiconductor doping

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    Malyarevich, A. M., Savitski, V. G., Prokoshin, P. V., Yumashev, K. V., & Lipovskii, A. A. (2001). Passive Q-switch operation of PbSe-doped glass at 2.1 μm. Proceedings of SPIE - The International Society for Optical Engineering, 4350, 32-35. https://doi.org/10.1117/12.420970