Abstract
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift applied to the saturable absorber (SA) section has been experimentally characterized. For the first time a fully post-growth technique, quantum well intermixing, was adopted to modify the material bandgap in the SA section. The measurements showed not only an expected narrowing of the pulse width but also a significant expansion of the range of bias conditions generating a stable train of optical pulses. Moreover, the pulses from lasers with bandgap shifted absorbers presented reduced chirp and increased peak power with respect to the nonshifted case.
| Original language | English |
|---|---|
| Pages (from-to) | 186-189 |
| Number of pages | 4 |
| Journal | Photonics Research |
| Volume | 2 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1 Dec 2014 |
Keywords
- integrated optics devices
- mode-locked lasers
- semiconductor lasers