Abstract
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift applied to the saturable absorber (SA) section has been experimentally characterized. For the first time a fully post-growth technique, quantum well intermixing, was adopted to modify the material bandgap in the SA section. The measurements showed not only an expected narrowing of the pulse width but also a significant expansion of the range of bias conditions generating a stable train of optical pulses. Moreover, the pulses from lasers with bandgap shifted absorbers presented reduced chirp and increased peak power with respect to the nonshifted case.
| Original language | English |
|---|---|
| Pages (from-to) | 186-189 |
| Number of pages | 4 |
| Journal | Photonics Research |
| Volume | 2 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1 Dec 2014 |
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Keywords
- integrated optics devices
- mode-locked lasers
- semiconductor lasers
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Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing. / Pusino, Vincenzo; Strain, Michael J.; Sorel, Marc.
In: Photonics Research, Vol. 2, No. 6, 01.12.2014, p. 186-189.Research output: Contribution to journal › Article
TY - JOUR
T1 - Passive mode-locking in semiconductor lasers with saturable absorbers bandgap shifted through quantum well intermixing
AU - Pusino, Vincenzo
AU - Strain, Michael J.
AU - Sorel, Marc
N1 - © 2014 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
PY - 2014/12/1
Y1 - 2014/12/1
N2 - Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift applied to the saturable absorber (SA) section has been experimentally characterized. For the first time a fully post-growth technique, quantum well intermixing, was adopted to modify the material bandgap in the SA section. The measurements showed not only an expected narrowing of the pulse width but also a significant expansion of the range of bias conditions generating a stable train of optical pulses. Moreover, the pulses from lasers with bandgap shifted absorbers presented reduced chirp and increased peak power with respect to the nonshifted case.
AB - Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift applied to the saturable absorber (SA) section has been experimentally characterized. For the first time a fully post-growth technique, quantum well intermixing, was adopted to modify the material bandgap in the SA section. The measurements showed not only an expected narrowing of the pulse width but also a significant expansion of the range of bias conditions generating a stable train of optical pulses. Moreover, the pulses from lasers with bandgap shifted absorbers presented reduced chirp and increased peak power with respect to the nonshifted case.
KW - integrated optics devices
KW - mode-locked lasers
KW - semiconductor lasers
UR - http://www.scopus.com/inward/record.url?scp=84941096400&partnerID=8YFLogxK
UR - https://www.osapublishing.org/prj/home.cfm
U2 - 10.1364/PRJ.2.000186
DO - 10.1364/PRJ.2.000186
M3 - Article
VL - 2
SP - 186
EP - 189
JO - Photonics Research
JF - Photonics Research
SN - 2327-9125
IS - 6
ER -