Abstract
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift applied to the saturable absorber (SA) section has been experimentally characterized. For the first time a fully post-growth technique, quantum well intermixing, was adopted to modify the material bandgap in the SA section. The measurements showed not only an expected narrowing of the pulse width but also a significant expansion of the range of bias conditions generating a stable train of optical pulses. Moreover, the pulses from lasers with bandgap shifted absorbers presented reduced chirp and increased peak power with respect to the nonshifted case.
Original language | English |
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Pages (from-to) | 186-189 |
Number of pages | 4 |
Journal | Photonics Research |
Volume | 2 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1 Dec 2014 |
Keywords
- integrated optics devices
- mode-locked lasers
- semiconductor lasers