Origin of the Stokes shift: a geometrical model of exciton spectra in 2D semiconductors

Fang Yang, M. Wilkinson, E. J. Austin, K. P. O'Donnell

Research output: Contribution to journalArticle

170 Citations (Scopus)

Abstract

We consider the optical absorption and emission spectra of excitons in two-dimensional semiconductors disordered through interface fluctuations. These spectra show a universal behavior exemplified by the fact that the offset of the spectral peaks (the Stokes shift) is proportinal to their linewidths over a range of at least 2 orders of magnitude. We introduce a topographical theory of the exciton spectra which models such behavior in terms of statistical properties of a Gaussian random function. The coefficient of proportionality between the Stokes shift and the exciton absorption linewidth is found to be γ=2/ 6π ln2 =0.553 by analysis and 0.6 by experiment.

LanguageEnglish
Pages323-326
Number of pages4
JournalPhysical Review Letters
Volume70
Issue number3
DOIs
Publication statusPublished - 18 Jan 1993

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excitons
shift
light emission
optical spectrum
emission spectra
optical absorption
absorption spectra
coefficients

Keywords

  • optical absorption
  • stokes shift
  • linewidth

Cite this

Yang, Fang ; Wilkinson, M. ; Austin, E. J. ; O'Donnell, K. P. / Origin of the Stokes shift : a geometrical model of exciton spectra in 2D semiconductors. In: Physical Review Letters. 1993 ; Vol. 70, No. 3. pp. 323-326.
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Origin of the Stokes shift : a geometrical model of exciton spectra in 2D semiconductors. / Yang, Fang; Wilkinson, M.; Austin, E. J.; O'Donnell, K. P.

In: Physical Review Letters, Vol. 70, No. 3, 18.01.1993, p. 323-326.

Research output: Contribution to journalArticle

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