Origin of the 0.97 eV luminescence in irradiated silicon

K. P. O'Donnell, K. M. Lee, G. D. Watkins

Research output: Contribution to journalArticle

103 Citations (Scopus)

Abstract

Optical detection of magnetic resonance studies are described for the well-studied optical center with zero phonon line at 0.97 eV in irradiated silicon. Analysis of the S=1 ODMR spin Hamiltonian reveals a low symmetry (Clh) center and a resolved 29Si hyperfine interaction with a single silicon atom. In a specially enriched 13C doped sample we find additional hf interactions with two equivalent carbon atoms. At elevated temperatures, the defect reorients easily from one Clh distortion to another around a common 〈111t> axis; during this reorientation the spin density remains located on the same silicon atom and the same carbon pair. From these results we construct a model comprising two adjacent (substitutional) carbon atoms and an interstitial silicon atom which has distorted out from a bond-centered position. We conclude that the same defect gives rise to the Si-G11 EPR spectrum when positively charged.

Original languageEnglish
Pages (from-to)258-263
Number of pages6
JournalPhysica B+C
Volume116
Issue number1-3
DOIs
Publication statusPublished - 1 Feb 1983

Keywords

  • optical detection
  • magnetic resonance
  • irradiated silicon
  • luminescence

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