Origin of the 0.97 eV luminescence in irradiated silicon

K. P. O'Donnell, K. M. Lee, G. D. Watkins

Research output: Contribution to journalArticle

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Abstract

Optical detection of magnetic resonance studies are described for the well-studied optical center with zero phonon line at 0.97 eV in irradiated silicon. Analysis of the S=1 ODMR spin Hamiltonian reveals a low symmetry (Clh) center and a resolved 29Si hyperfine interaction with a single silicon atom. In a specially enriched 13C doped sample we find additional hf interactions with two equivalent carbon atoms. At elevated temperatures, the defect reorients easily from one Clh distortion to another around a common 〈111t> axis; during this reorientation the spin density remains located on the same silicon atom and the same carbon pair. From these results we construct a model comprising two adjacent (substitutional) carbon atoms and an interstitial silicon atom which has distorted out from a bond-centered position. We conclude that the same defect gives rise to the Si-G11 EPR spectrum when positively charged.

LanguageEnglish
Pages258-263
Number of pages6
JournalPhysica B+C
Volume116
Issue number1-3
DOIs
Publication statusPublished - 1 Feb 1983

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Silicon
Luminescence
luminescence
Carbon
silicon
atoms
Phonons
carbon
defects
Magnetic Resonance Spectroscopy
retraining
magnetic resonance
interstitials
Temperature
interactions
symmetry
temperature

Keywords

  • optical detection
  • magnetic resonance
  • irradiated silicon
  • luminescence

Cite this

O'Donnell, K. P. ; Lee, K. M. ; Watkins, G. D. / Origin of the 0.97 eV luminescence in irradiated silicon. In: Physica B+C. 1983 ; Vol. 116, No. 1-3. pp. 258-263.
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Origin of the 0.97 eV luminescence in irradiated silicon. / O'Donnell, K. P.; Lee, K. M.; Watkins, G. D.

In: Physica B+C, Vol. 116, No. 1-3, 01.02.1983, p. 258-263.

Research output: Contribution to journalArticle

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AU - Lee, K. M.

AU - Watkins, G. D.

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