Origin of red emission in β-Ga2O3 analysed by cathodoluminescence and photoluminescence spectroscopy

Gunasekar Naresh-Kumar; Hazel Macintyre; Shanthi Shanthi; Paul R. Edwards; Robert W. Martin; Krishnamurthy  Daivasigamani; Kohei Sasaki; Akito Kuramata

doi:10.1002/pssb.202000465

Origin of red emission in β-Ga₂O₃ analysed by cathodoluminescence and photoluminescence spectroscopy

Gunasekar Naresh-Kumar, Hazel Macintyre, Shanthi Shanthi, Paul R. Edwards, Robert W. Martin, Krishnamurthy Daivasigamani, Kohei Sasaki, Akito Kuramata

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

1 Downloads (Pure)

Abstract

The spectroscopic techniques of cathodoluminescence (CL) and photoluminescence (PL) are used to study the origin of red emission in β-Ga ₂O ₃ grown using the edge-defined film-fed grown (EFG) method and hydride vapor phase epitaxy. Room-temperature CL shows red emission peaks from samples doped with Fe, Sn, and Si and from unintentionally doped (UID) samples. Narrow emission lines around 690 nm are seen strongly in the Fe and UID samples. Temperature-dependent PL analysis of the two prominent red emission lines reveals properties similar to the R lines in sapphire for all samples but with different levels of emission intensities. These lines are attributed to Cr ³⁺ ionic transitions rather than Fe ³⁺, as reported previously. The most likely origin of the unintentional Cr incorporation is the source material used in the EFG method.

Original language	English
Article number	2000465
Journal	Physica Status Solidi B
Volume	258
Early online date	20 Oct 2020
DOIs	https://doi.org/10.1002/pssb.202000465
Publication status	Published - 28 Feb 2021

Keywords

spectroscopy methods
gallium oxide
scanning electron microscope (SEM)
cathodoluminescence
photoluminescence

Access to Document

10.1002/pssb.202000465

Naresh-Kumar-etal-PSSB-2020-Origin-of-red-emission-in-Ga2O3-analysed-by-cathodoluminescenceAccepted author manuscript, 504 KB

Cite this

@article{260060629ad24e24bd0bed80e910e152,

title = "Origin of red emission in β-Ga2O3 analysed by cathodoluminescence and photoluminescence spectroscopy",

abstract = "The spectroscopic techniques of cathodoluminescence (CL) and photoluminescence (PL) are used to study the origin of red emission in β-Ga 2O 3 grown using the edge-defined film-fed grown (EFG) method and hydride vapor phase epitaxy. Room-temperature CL shows red emission peaks from samples doped with Fe, Sn, and Si and from unintentionally doped (UID) samples. Narrow emission lines around 690 nm are seen strongly in the Fe and UID samples. Temperature-dependent PL analysis of the two prominent red emission lines reveals properties similar to the R lines in sapphire for all samples but with different levels of emission intensities. These lines are attributed to Cr 3+ ionic transitions rather than Fe 3+, as reported previously. The most likely origin of the unintentional Cr incorporation is the source material used in the EFG method. ",

keywords = "spectroscopy methods, gallium oxide, scanning electron microscope (SEM), cathodoluminescence , photoluminescence",

author = "Gunasekar Naresh-Kumar and Hazel Macintyre and Shanthi Shanthi and Edwards, {Paul R.} and Martin, {Robert W.} and Krishnamurthy Daivasigamani and Kohei Sasaki and Akito Kuramata",

year = "2021",

month = feb,

day = "28",

doi = "10.1002/pssb.202000465",

language = "English",

volume = "258",

journal = "Physica Status Solidi B",

issn = "0370-1972",

}

TY - JOUR

T1 - Origin of red emission in β-Ga2O3 analysed by cathodoluminescence and photoluminescence spectroscopy

AU - Naresh-Kumar, Gunasekar

AU - Macintyre, Hazel

AU - Shanthi, Shanthi

AU - Edwards, Paul R.

AU - Martin, Robert W.

AU - Daivasigamani, Krishnamurthy

AU - Sasaki, Kohei

AU - Kuramata, Akito

PY - 2021/2/28

Y1 - 2021/2/28

N2 - The spectroscopic techniques of cathodoluminescence (CL) and photoluminescence (PL) are used to study the origin of red emission in β-Ga 2O 3 grown using the edge-defined film-fed grown (EFG) method and hydride vapor phase epitaxy. Room-temperature CL shows red emission peaks from samples doped with Fe, Sn, and Si and from unintentionally doped (UID) samples. Narrow emission lines around 690 nm are seen strongly in the Fe and UID samples. Temperature-dependent PL analysis of the two prominent red emission lines reveals properties similar to the R lines in sapphire for all samples but with different levels of emission intensities. These lines are attributed to Cr 3+ ionic transitions rather than Fe 3+, as reported previously. The most likely origin of the unintentional Cr incorporation is the source material used in the EFG method.

AB - The spectroscopic techniques of cathodoluminescence (CL) and photoluminescence (PL) are used to study the origin of red emission in β-Ga 2O 3 grown using the edge-defined film-fed grown (EFG) method and hydride vapor phase epitaxy. Room-temperature CL shows red emission peaks from samples doped with Fe, Sn, and Si and from unintentionally doped (UID) samples. Narrow emission lines around 690 nm are seen strongly in the Fe and UID samples. Temperature-dependent PL analysis of the two prominent red emission lines reveals properties similar to the R lines in sapphire for all samples but with different levels of emission intensities. These lines are attributed to Cr 3+ ionic transitions rather than Fe 3+, as reported previously. The most likely origin of the unintentional Cr incorporation is the source material used in the EFG method.

KW - spectroscopy methods

KW - gallium oxide

KW - scanning electron microscope (SEM)

KW - cathodoluminescence

KW - photoluminescence

UR - https://onlinelibrary.wiley.com/journal/15213951

U2 - 10.1002/pssb.202000465

DO - 10.1002/pssb.202000465

M3 - Article

VL - 258

JO - Physica Status Solidi B

JF - Physica Status Solidi B

SN - 0370-1972

M1 - 2000465

ER -

Origin of red emission in β-Ga₂O₃ analysed by cathodoluminescence and photoluminescence spectroscopy

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Quantitative non-destructive nanoscale characterisation of advanced materials

University Of Strathclyde - Equipment Account

Data for: "Origin of Red Emission in β-Ga2O3 Analysed by Cathodoluminescence and Photoluminescence Spectroscopy"

ESEM Quanta 250

Cite this

Origin of red emission in β-Ga2O3 analysed by cathodoluminescence and photoluminescence spectroscopy

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Projects

Quantitative non-destructive nanoscale characterisation of advanced materials

University Of Strathclyde - Equipment Account

Datasets

Data for: "Origin of Red Emission in β-Ga2O3 Analysed by Cathodoluminescence and Photoluminescence Spectroscopy"

Equipment

ESEM Quanta 250

Cite this

Origin of red emission in β-Ga₂O₃ analysed by cathodoluminescence and photoluminescence spectroscopy