Origin of red emission in β-Ga2O3 analysed by cathodoluminescence and photoluminescence spectroscopy

G. Naresh-Kumar, H. Macintyre, S. Shanthi, P. R. Edwards, R. W. Martin, D. Krishnamurthy, K. Sasaki, A. Kuramata

Research output: Contribution to journalArticle


The spectroscopic techniques of cathodoluminescence and photoluminescence are used to study the origin of red emission in β-Ga2O3 grown using the edge-defined film-fed grown (EFG) method and hydride vapor phase epitaxy. Room temperature cathodoluminescence shows red emission peaks from samples doped with Fe, Sn, and Si and from unintentionally doped samples. Narrow emission lines around 690 nm are seen strongly in the Fe and unintentionally doped samples. Temperature-dependent photoluminescence analysis of the two prominent red emission lines reveals properties similar to the R lines in sapphire for all the samples, but with different level of existence. These lines are attributed to Cr3+ ionic transitions rather than to Fe3+, as reported previously. The most likely origin of the unintentional Cr incorporation is the source material used in the EFG method.
Original languageEnglish
JournalPhysica Status Solidi B
Publication statusAccepted/In press - 5 Oct 2020


  • spectroscopy methods
  • gallium oxide
  • scanning electron microscope (SEM)

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