Organic thin film transistors with multi-finger contacts as voltage amplifiers

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Low-voltage p-type organic transistors with two types of multi-finger source/drain contacts were fabricated on glass and polyethylene naphthalate (PEN). They exhibited threshold voltage between −0.3 and −0.5 V and field-effect mobility between 0.2 and 0.4 cm2/Vs. Their transconductance in saturation operation varied from 25 to 60 uS and scaled with the gate dielectric capacitance and transistor dimensions. All transistors operated beyond 1 kHz, while the transistors with the shortest channel length (L = 20 um, W = 4.03 mm) exhibited a cut-off frequency of 13.4 kHz. The transistors were used to build simple voltage amplifiers by adding a resistor Rd on the drain side of the transistor. Higher Rd required higher supply voltage Vdd but resulted in increased voltage gain. A voltage gain in excess of 8 V/V was obtained for Vdd of −12 V and Rd of 220 kohm when transistor with medium value of transconductance of 37 uS was used. Consequently, the voltage gain of 10 V/V is achievable, making such transistor structures viable for sensor development.
LanguageEnglish
Pages43770-43775
Number of pages6
JournalIEEE Access
Volume6
Issue number1
Early online date3 Aug 2018
DOIs
Publication statusPublished - 28 Aug 2018

Fingerprint

Thin film transistors
Transistors
Electric potential
Transconductance
Gate dielectrics
Cutoff frequency
Polyethylene
Threshold voltage
Resistors
Polyethylenes
Capacitance
Glass
Sensors

Keywords

  • amplifiers
  • analog circuits
  • organic thin film transistors
  • sensors

Cite this

@article{1e801a896f6a45f58d15af00cfb1b179,
title = "Organic thin film transistors with multi-finger contacts as voltage amplifiers",
abstract = "Low-voltage p-type organic transistors with two types of multi-finger source/drain contacts were fabricated on glass and polyethylene naphthalate (PEN). They exhibited threshold voltage between −0.3 and −0.5 V and field-effect mobility between 0.2 and 0.4 cm2/Vs. Their transconductance in saturation operation varied from 25 to 60 uS and scaled with the gate dielectric capacitance and transistor dimensions. All transistors operated beyond 1 kHz, while the transistors with the shortest channel length (L = 20 um, W = 4.03 mm) exhibited a cut-off frequency of 13.4 kHz. The transistors were used to build simple voltage amplifiers by adding a resistor Rd on the drain side of the transistor. Higher Rd required higher supply voltage Vdd but resulted in increased voltage gain. A voltage gain in excess of 8 V/V was obtained for Vdd of −12 V and Rd of 220 kohm when transistor with medium value of transconductance of 37 uS was used. Consequently, the voltage gain of 10 V/V is achievable, making such transistor structures viable for sensor development.",
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Organic thin film transistors with multi-finger contacts as voltage amplifiers. / Al Ruzaiqi, Afra; Ishaku, Amayikai A.; Gleskova, Helena.

In: IEEE Access, Vol. 6, No. 1, 28.08.2018, p. 43770-43775.

Research output: Contribution to journalArticle

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