Optimizing the deposition rate of vacuum-grown n-octylphosphonic acid monolayer for low-voltage thin-film transistors

Swati Gupta, Helena Gleskova

Research output: Contribution to journalConference Contribution

1 Citation (Scopus)

Abstract

A self-assembled monolayer of n-octylphosphonic acid (C8PA) is prepared from vapor phase in vacuum. C8PA thickness corresponding to several monolayers is deposited on aluminum oxide (AlOx) and subsequently heated to leave a monolayer of chemisorbed molecules. The effect of C8PA deposition rate on a 15-nm-thick, bilayer AlOx/C8PA dielectric and low-voltage p-channel organic thin-film transistors (OTFTs) is studied. The increase in the deposition rate from 0.1 to 7.0 Å/s leads to increase in the field-effect mobility from 0.039 to 0.061 cm2/Vs, while the threshold voltage remains around −1.55 V. At the same time, the off-current is reduced from 2.3 × 10−12 to 1.3 × 10−12A, the subthreshold slope is lowered from 100 to 89 mV/decade and the on/off current ratio is increased from ∼105 to ∼106. The leakage current density of AlOx is reduced from 1 × 10−7 to 4 × 10−8 A/cm2 at 3 V when C8PA monolayer is added on top of it. In addition, pentacene grain size on AlOx/C8PA is larger than that on AlOx. The overall performance of AlOx/C8PA OTFTs is superior to that of AlOx OTFTs.
LanguageEnglish
Pages135-138
Number of pages4
JournalSID Symposium Digest of Technical Papers
Volume44
Issue numberSupplement S1
DOIs
Publication statusPublished - Sep 2013
EventEuroDisplay 2013 - London, United Kingdom
Duration: 16 Sep 201319 Sep 2013

Fingerprint

Thin film transistors
Deposition rates
Monolayers
Vacuum
Aluminum
Oxides
Acids
Electric potential
Self assembled monolayers
Threshold voltage
Leakage currents
Current density
Vapors
Molecules

Keywords

  • low-voltage thin-film transistors
  • optimizing the deposition rate
  • vacuum-grown
  • n-octylphosphonic acid monolayer

Cite this

@article{9d36e2017c964a29ba7fe0324fba847c,
title = "Optimizing the deposition rate of vacuum-grown n-octylphosphonic acid monolayer for low-voltage thin-film transistors",
abstract = "A self-assembled monolayer of n-octylphosphonic acid (C8PA) is prepared from vapor phase in vacuum. C8PA thickness corresponding to several monolayers is deposited on aluminum oxide (AlOx) and subsequently heated to leave a monolayer of chemisorbed molecules. The effect of C8PA deposition rate on a 15-nm-thick, bilayer AlOx/C8PA dielectric and low-voltage p-channel organic thin-film transistors (OTFTs) is studied. The increase in the deposition rate from 0.1 to 7.0 {\AA}/s leads to increase in the field-effect mobility from 0.039 to 0.061 cm2/Vs, while the threshold voltage remains around −1.55 V. At the same time, the off-current is reduced from 2.3 × 10−12 to 1.3 × 10−12A, the subthreshold slope is lowered from 100 to 89 mV/decade and the on/off current ratio is increased from ∼105 to ∼106. The leakage current density of AlOx is reduced from 1 × 10−7 to 4 × 10−8 A/cm2 at 3 V when C8PA monolayer is added on top of it. In addition, pentacene grain size on AlOx/C8PA is larger than that on AlOx. The overall performance of AlOx/C8PA OTFTs is superior to that of AlOx OTFTs.",
keywords = "low-voltage thin-film transistors, optimizing the deposition rate, vacuum-grown, n-octylphosphonic acid monolayer",
author = "Swati Gupta and Helena Gleskova",
year = "2013",
month = "9",
doi = "10.1002/sdtp.8",
language = "English",
volume = "44",
pages = "135--138",
journal = "SID Symposium Digest of Technical Papers",
issn = "2168-0159",
number = "Supplement S1",

}

Optimizing the deposition rate of vacuum-grown n-octylphosphonic acid monolayer for low-voltage thin-film transistors. / Gupta, Swati; Gleskova, Helena.

In: SID Symposium Digest of Technical Papers , Vol. 44, No. Supplement S1, 09.2013, p. 135-138.

Research output: Contribution to journalConference Contribution

TY - JOUR

T1 - Optimizing the deposition rate of vacuum-grown n-octylphosphonic acid monolayer for low-voltage thin-film transistors

AU - Gupta, Swati

AU - Gleskova, Helena

PY - 2013/9

Y1 - 2013/9

N2 - A self-assembled monolayer of n-octylphosphonic acid (C8PA) is prepared from vapor phase in vacuum. C8PA thickness corresponding to several monolayers is deposited on aluminum oxide (AlOx) and subsequently heated to leave a monolayer of chemisorbed molecules. The effect of C8PA deposition rate on a 15-nm-thick, bilayer AlOx/C8PA dielectric and low-voltage p-channel organic thin-film transistors (OTFTs) is studied. The increase in the deposition rate from 0.1 to 7.0 Å/s leads to increase in the field-effect mobility from 0.039 to 0.061 cm2/Vs, while the threshold voltage remains around −1.55 V. At the same time, the off-current is reduced from 2.3 × 10−12 to 1.3 × 10−12A, the subthreshold slope is lowered from 100 to 89 mV/decade and the on/off current ratio is increased from ∼105 to ∼106. The leakage current density of AlOx is reduced from 1 × 10−7 to 4 × 10−8 A/cm2 at 3 V when C8PA monolayer is added on top of it. In addition, pentacene grain size on AlOx/C8PA is larger than that on AlOx. The overall performance of AlOx/C8PA OTFTs is superior to that of AlOx OTFTs.

AB - A self-assembled monolayer of n-octylphosphonic acid (C8PA) is prepared from vapor phase in vacuum. C8PA thickness corresponding to several monolayers is deposited on aluminum oxide (AlOx) and subsequently heated to leave a monolayer of chemisorbed molecules. The effect of C8PA deposition rate on a 15-nm-thick, bilayer AlOx/C8PA dielectric and low-voltage p-channel organic thin-film transistors (OTFTs) is studied. The increase in the deposition rate from 0.1 to 7.0 Å/s leads to increase in the field-effect mobility from 0.039 to 0.061 cm2/Vs, while the threshold voltage remains around −1.55 V. At the same time, the off-current is reduced from 2.3 × 10−12 to 1.3 × 10−12A, the subthreshold slope is lowered from 100 to 89 mV/decade and the on/off current ratio is increased from ∼105 to ∼106. The leakage current density of AlOx is reduced from 1 × 10−7 to 4 × 10−8 A/cm2 at 3 V when C8PA monolayer is added on top of it. In addition, pentacene grain size on AlOx/C8PA is larger than that on AlOx. The overall performance of AlOx/C8PA OTFTs is superior to that of AlOx OTFTs.

KW - low-voltage thin-film transistors

KW - optimizing the deposition rate

KW - vacuum-grown

KW - n-octylphosphonic acid monolayer

UR - http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2168-0159

U2 - 10.1002/sdtp.8

DO - 10.1002/sdtp.8

M3 - Conference Contribution

VL - 44

SP - 135

EP - 138

JO - SID Symposium Digest of Technical Papers

T2 - SID Symposium Digest of Technical Papers

JF - SID Symposium Digest of Technical Papers

SN - 2168-0159

IS - Supplement S1

ER -