Optimising layer thickness of multi-junction silicon devices for energy production

S. Andre, T.R. Betts, R. Gottschalg, D.G. Infield

Research output: Contribution to conferencePaper

Abstract

This chapter looks at optimising layer thickness of multi-junction silicon devices for energy production
LanguageEnglish
Pages1623-1626
Number of pages3
Publication statusPublished - Jun 2005
Event20th European Photovoltaic Solar Energy Conference - Barcelona, Spain
Duration: 6 Jun 200510 Jun 2005

Conference

Conference20th European Photovoltaic Solar Energy Conference
CountrySpain
CityBarcelona
Period6/06/0510/06/05

Fingerprint

silicon junctions
energy

Keywords

  • optimising
  • layer thickness
  • multi-junction
  • silicon devices
  • energy production

Cite this

Andre, S., Betts, T. R., Gottschalg, R., & Infield, D. G. (2005). Optimising layer thickness of multi-junction silicon devices for energy production. 1623-1626. Paper presented at 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain.
Andre, S. ; Betts, T.R. ; Gottschalg, R. ; Infield, D.G. / Optimising layer thickness of multi-junction silicon devices for energy production. Paper presented at 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain.3 p.
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Andre, S, Betts, TR, Gottschalg, R & Infield, DG 2005, 'Optimising layer thickness of multi-junction silicon devices for energy production' Paper presented at 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain, 6/06/05 - 10/06/05, pp. 1623-1626.

Optimising layer thickness of multi-junction silicon devices for energy production. / Andre, S.; Betts, T.R.; Gottschalg, R.; Infield, D.G.

2005. 1623-1626 Paper presented at 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Optimising layer thickness of multi-junction silicon devices for energy production

AU - Andre, S.

AU - Betts, T.R.

AU - Gottschalg, R.

AU - Infield, D.G.

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Y1 - 2005/6

N2 - This chapter looks at optimising layer thickness of multi-junction silicon devices for energy production

AB - This chapter looks at optimising layer thickness of multi-junction silicon devices for energy production

KW - optimising

KW - layer thickness

KW - multi-junction

KW - silicon devices

KW - energy production

M3 - Paper

SP - 1623

EP - 1626

ER -

Andre S, Betts TR, Gottschalg R, Infield DG. Optimising layer thickness of multi-junction silicon devices for energy production. 2005. Paper presented at 20th European Photovoltaic Solar Energy Conference, Barcelona, Spain.