Optimising layer thickness of multi-junction silicon devices for energy production

S. Andre, T.R. Betts, R. Gottschalg, D.G. Infield

Research output: Contribution to conference › Paper

Abstract

This chapter looks at optimising layer thickness of multi-junction silicon devices for energy production

Original language	English
Pages	1623-1626
Number of pages	3
Publication status	Published - Jun 2005
Event	20th European Photovoltaic Solar Energy Conference - Barcelona, Spain Duration: 6 Jun 2005 → 10 Jun 2005

Conference	20th European Photovoltaic Solar Energy Conference
Country	Spain
City	Barcelona
Period	6/06/05 → 10/06/05

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title = "Optimising layer thickness of multi-junction silicon devices for energy production",

abstract = "This chapter looks at optimising layer thickness of multi-junction silicon devices for energy production",

keywords = "optimising, layer thickness, multi-junction, silicon devices, energy production",

author = "S. Andre and T.R. Betts and R. Gottschalg and D.G. Infield",

year = "2005",

month = jun,

language = "English",

pages = "1623--1626",

note = "20th European Photovoltaic Solar Energy Conference ; Conference date: 06-06-2005 Through 10-06-2005",

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AU - Andre, S.

AU - Betts, T.R.

AU - Gottschalg, R.

AU - Infield, D.G.

PY - 2005/6

Y1 - 2005/6

N2 - This chapter looks at optimising layer thickness of multi-junction silicon devices for energy production

AB - This chapter looks at optimising layer thickness of multi-junction silicon devices for energy production

KW - optimising

KW - layer thickness

KW - multi-junction

KW - silicon devices

KW - energy production

M3 - Paper

SP - 1623

EP - 1626

T2 - 20th European Photovoltaic Solar Energy Conference

Y2 - 6 June 2005 through 10 June 2005

ER -