Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures

M. Hetterich, M.D. Dawson, A.Y. Egorov, H. Riechert

Research output: Contribution to conferencePaper

Abstract

We investigate optically pumped lasing of GaInNAs-based VCSELs emitting at 1.3 mum. The samples measured were full device structures including doping. Conventional p-i-n-type VCSELs showed high internal threshold excitation densities of around 10 MW/cm(2). Improvements, especially the introduction of a tunnel junction reduced the threshold to about 128 kW/cm(2) and should after further optimization enable us to realize an electrically pumped 1.3 mum VCSEL in the near future.

Conference

Conference25th International Conference on the Physics of Semiconductors Part I / Part II
CityOsaka, Japan
Period17/09/0022/09/00

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lasing
thresholds
tunnel junctions
optimization
excitation

Keywords

  • lasers

Cite this

Hetterich, M., Dawson, M. D., Egorov, A. Y., & Riechert, H. (2001). Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures. 693-694. Paper presented at 25th International Conference on the Physics of Semiconductors Part I / Part II, Osaka, Japan, .
Hetterich, M. ; Dawson, M.D. ; Egorov, A.Y. ; Riechert, H. / Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures. Paper presented at 25th International Conference on the Physics of Semiconductors Part I / Part II, Osaka, Japan, .1 p.
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title = "Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures",
abstract = "We investigate optically pumped lasing of GaInNAs-based VCSELs emitting at 1.3 mum. The samples measured were full device structures including doping. Conventional p-i-n-type VCSELs showed high internal threshold excitation densities of around 10 MW/cm(2). Improvements, especially the introduction of a tunnel junction reduced the threshold to about 128 kW/cm(2) and should after further optimization enable us to realize an electrically pumped 1.3 mum VCSEL in the near future.",
keywords = "lasers",
author = "M. Hetterich and M.D. Dawson and A.Y. Egorov and H. Riechert",
year = "2001",
language = "English",
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note = "25th International Conference on the Physics of Semiconductors Part I / Part II ; Conference date: 17-09-2000 Through 22-09-2000",

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Hetterich, M, Dawson, MD, Egorov, AY & Riechert, H 2001, 'Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures' Paper presented at 25th International Conference on the Physics of Semiconductors Part I / Part II, Osaka, Japan, 17/09/00 - 22/09/00, pp. 693-694.

Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures. / Hetterich, M.; Dawson, M.D.; Egorov, A.Y.; Riechert, H.

2001. 693-694 Paper presented at 25th International Conference on the Physics of Semiconductors Part I / Part II, Osaka, Japan, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures

AU - Hetterich, M.

AU - Dawson, M.D.

AU - Egorov, A.Y.

AU - Riechert, H.

PY - 2001

Y1 - 2001

N2 - We investigate optically pumped lasing of GaInNAs-based VCSELs emitting at 1.3 mum. The samples measured were full device structures including doping. Conventional p-i-n-type VCSELs showed high internal threshold excitation densities of around 10 MW/cm(2). Improvements, especially the introduction of a tunnel junction reduced the threshold to about 128 kW/cm(2) and should after further optimization enable us to realize an electrically pumped 1.3 mum VCSEL in the near future.

AB - We investigate optically pumped lasing of GaInNAs-based VCSELs emitting at 1.3 mum. The samples measured were full device structures including doping. Conventional p-i-n-type VCSELs showed high internal threshold excitation densities of around 10 MW/cm(2). Improvements, especially the introduction of a tunnel junction reduced the threshold to about 128 kW/cm(2) and should after further optimization enable us to realize an electrically pumped 1.3 mum VCSEL in the near future.

KW - lasers

UR - http://www.springer.com/materials/optical+%26+electronic+materials/book/978-3-540-41778-1

M3 - Paper

SP - 693

EP - 694

ER -

Hetterich M, Dawson MD, Egorov AY, Riechert H. Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures. 2001. Paper presented at 25th International Conference on the Physics of Semiconductors Part I / Part II, Osaka, Japan, .