Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures

M. Hetterich; M.D. Dawson; A.Y. Egorov; H. Riechert

Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures

M. Hetterich, M.D. Dawson, A.Y. Egorov, H. Riechert

Institute Of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

We investigate optically pumped lasing of GaInNAs-based VCSELs emitting at 1.3 mum. The samples measured were full device structures including doping. Conventional p-i-n-type VCSELs showed high internal threshold excitation densities of around 10 MW/cm(2). Improvements, especially the introduction of a tunnel junction reduced the threshold to about 128 kW/cm(2) and should after further optimization enable us to realize an electrically pumped 1.3 mum VCSEL in the near future.

Original language	English
Pages	693-694
Number of pages	1
Publication status	Published - 2001
Event	25th International Conference on the Physics of Semiconductors Part I / Part II - Osaka, Japan Duration: 17 Sept 2000 → 22 Sept 2000

Conference

Conference	25th International Conference on the Physics of Semiconductors Part I / Part II
City	Osaka, Japan
Period	17/09/00 → 22/09/00

Keywords

lasers

Cite this

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title = "Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures",

abstract = "We investigate optically pumped lasing of GaInNAs-based VCSELs emitting at 1.3 mum. The samples measured were full device structures including doping. Conventional p-i-n-type VCSELs showed high internal threshold excitation densities of around 10 MW/cm(2). Improvements, especially the introduction of a tunnel junction reduced the threshold to about 128 kW/cm(2) and should after further optimization enable us to realize an electrically pumped 1.3 mum VCSEL in the near future.",

keywords = "lasers",

author = "M. Hetterich and M.D. Dawson and A.Y. Egorov and H. Riechert",

year = "2001",

language = "English",

pages = "693--694",

note = "25th International Conference on the Physics of Semiconductors Part I / Part II ; Conference date: 17-09-2000 Through 22-09-2000",

}

TY - CONF

T1 - Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures

AU - Hetterich, M.

AU - Dawson, M.D.

AU - Egorov, A.Y.

AU - Riechert, H.

PY - 2001

Y1 - 2001

N2 - We investigate optically pumped lasing of GaInNAs-based VCSELs emitting at 1.3 mum. The samples measured were full device structures including doping. Conventional p-i-n-type VCSELs showed high internal threshold excitation densities of around 10 MW/cm(2). Improvements, especially the introduction of a tunnel junction reduced the threshold to about 128 kW/cm(2) and should after further optimization enable us to realize an electrically pumped 1.3 mum VCSEL in the near future.

AB - We investigate optically pumped lasing of GaInNAs-based VCSELs emitting at 1.3 mum. The samples measured were full device structures including doping. Conventional p-i-n-type VCSELs showed high internal threshold excitation densities of around 10 MW/cm(2). Improvements, especially the introduction of a tunnel junction reduced the threshold to about 128 kW/cm(2) and should after further optimization enable us to realize an electrically pumped 1.3 mum VCSEL in the near future.

KW - lasers

UR - http://www.springer.com/materials/optical+%26+electronic+materials/book/978-3-540-41778-1

M3 - Paper

SP - 693

EP - 694

T2 - 25th International Conference on the Physics of Semiconductors Part I / Part II

Y2 - 17 September 2000 through 22 September 2000

ER -

Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures

Abstract

Conference

Keywords

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