Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures

M. Hetterich, M.D. Dawson, A.Y. Egorov, H. Riechert

Research output: Contribution to conferencePaper

Abstract

We investigate optically pumped lasing of GaInNAs-based VCSELs emitting at 1.3 mum. The samples measured were full device structures including doping. Conventional p-i-n-type VCSELs showed high internal threshold excitation densities of around 10 MW/cm(2). Improvements, especially the introduction of a tunnel junction reduced the threshold to about 128 kW/cm(2) and should after further optimization enable us to realize an electrically pumped 1.3 mum VCSEL in the near future.
Original languageEnglish
Pages693-694
Number of pages1
Publication statusPublished - 2001
Event25th International Conference on the Physics of Semiconductors Part I / Part II - Osaka, Japan
Duration: 17 Sep 200022 Sep 2000

Conference

Conference25th International Conference on the Physics of Semiconductors Part I / Part II
CityOsaka, Japan
Period17/09/0022/09/00

Keywords

  • lasers

Cite this

Hetterich, M., Dawson, M. D., Egorov, A. Y., & Riechert, H. (2001). Optically-pumped lasing at 1.3um of GaInNAs-based VCSEL structures. 693-694. Paper presented at 25th International Conference on the Physics of Semiconductors Part I / Part II, Osaka, Japan, .