We investigate optically pumped lasing of GaInNAs-based VCSELs emitting at 1.3 mum. The samples measured were full device structures including doping. Conventional p-i-n-type VCSELs showed high internal threshold excitation densities of around 10 MW/cm(2). Improvements, especially the introduction of a tunnel junction reduced the threshold to about 128 kW/cm(2) and should after further optimization enable us to realize an electrically pumped 1.3 mum VCSEL in the near future.
|Number of pages||1|
|Publication status||Published - 2001|
|Event||25th International Conference on the Physics of Semiconductors Part I / Part II - Osaka, Japan|
Duration: 17 Sep 2000 → 22 Sep 2000
|Conference||25th International Conference on the Physics of Semiconductors Part I / Part II|
|Period||17/09/00 → 22/09/00|