Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy

H.D. Sun, M.D. Dawson, M. Othman, J.C.L. Yong, J.M. Rorison, P. Gilet, L. Grenouillet, A. Million

Research output: Contribution to journalArticle

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Abstract

We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0%-1.14%. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells.
LanguageEnglish
Pages376-378
Number of pages2
JournalApplied Physics Letters
Volume82
Issue number3
DOIs
Publication statusPublished - Jan 2003

Fingerprint

optical transition
quantum wells
photoluminescence
nitrogen
spectroscopy
excitation
conduction bands
electrons

Keywords

  • laser-diodes
  • band offset
  • nitrogen
  • alloys
  • performance
  • operation
  • photoluminescence
  • spectroscopy
  • quantum wells

Cite this

Sun, H.D. ; Dawson, M.D. ; Othman, M. ; Yong, J.C.L. ; Rorison, J.M. ; Gilet, P. ; Grenouillet, L. ; Million, A. / Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy. In: Applied Physics Letters. 2003 ; Vol. 82, No. 3. pp. 376-378.
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abstract = "We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0{\%}-1.14{\%}. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells.",
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Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy. / Sun, H.D.; Dawson, M.D.; Othman, M.; Yong, J.C.L.; Rorison, J.M.; Gilet, P.; Grenouillet, L.; Million, A.

In: Applied Physics Letters, Vol. 82, No. 3, 01.2003, p. 376-378.

Research output: Contribution to journalArticle

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T1 - Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy

AU - Sun, H.D.

AU - Dawson, M.D.

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AU - Yong, J.C.L.

AU - Rorison, J.M.

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AB - We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0%-1.14%. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells.

KW - laser-diodes

KW - band offset

KW - nitrogen

KW - alloys

KW - performance

KW - operation

KW - photoluminescence

KW - spectroscopy

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