Optical spectroscopy studies of Cu2ZnSnSe4 thin films

M.V. Yakushev, I. Forbes, A.V. Mudryi, M. Grossberg, J. Krustok, N.S. Beattie, M. Moynihan, A. Rockett, R.W. Martin

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)
75 Downloads (Pure)


Cu2ZnSnSe4 thin films were synthesised by selenisation of magnetron sputtered metal precursors. The band gap determined from the absorption spectra increases from 1.01 eV at 300 K to 1.05 eV at 4.2 K. In lower quality films photoluminescence spectra show a broad, low intensity asymmetric band associated with a recombination of free electrons and holes localised on acceptors in the presence of spatial potential fluctuations. In high quality material the luminescence band becomes intense and narrow resolving two phonon replicas. Its shifts at changing excitation power suggest donor–acceptor pair recombination mechanisms. The proposed model involving two pairs of donors and acceptors is supported by the evolution of the band intensity and spectral position with temperature. Energy levels of the donors and acceptors are estimated using Arrhenius quenching analysis.
Original languageEnglish
Pages (from-to)154-157
Number of pages4
JournalThin Solid Films
Early online date16 Sept 2014
Publication statusPublished - 1 May 2015


  • Cu2ZnSnSe4
  • thin films
  • photoluminescence
  • defects
  • absorption


Dive into the research topics of 'Optical spectroscopy studies of Cu2ZnSnSe4 thin films'. Together they form a unique fingerprint.

Cite this