Optical spectroscopy studies of Cu2ZnSnSe4 thin films

M.V. Yakushev, I. Forbes, A.V. Mudryi, M. Grossberg, J. Krustok, N.S. Beattie, M. Moynihan, A. Rockett, R.W. Martin

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Cu2ZnSnSe4 thin films were synthesised by selenisation of magnetron sputtered metal precursors. The band gap determined from the absorption spectra increases from 1.01 eV at 300 K to 1.05 eV at 4.2 K. In lower quality films photoluminescence spectra show a broad, low intensity asymmetric band associated with a recombination of free electrons and holes localised on acceptors in the presence of spatial potential fluctuations. In high quality material the luminescence band becomes intense and narrow resolving two phonon replicas. Its shifts at changing excitation power suggest donor–acceptor pair recombination mechanisms. The proposed model involving two pairs of donors and acceptors is supported by the evolution of the band intensity and spectral position with temperature. Energy levels of the donors and acceptors are estimated using Arrhenius quenching analysis.
LanguageEnglish
Pages154-157
Number of pages4
JournalThin Solid Films
Volume582
Early online date16 Sep 2014
DOIs
Publication statusPublished - 1 May 2015

Fingerprint

Electron energy levels
Luminescence
Absorption spectra
Quenching
Photoluminescence
Energy gap
Metals
Thin films
Electrons
thin films
spectroscopy
Temperature
replicas
free electrons
energy levels
quenching
luminescence
absorption spectra
photoluminescence
Optical spectroscopy

Keywords

  • Cu2ZnSnSe4
  • thin films
  • photoluminescence
  • defects
  • absorption

Cite this

Yakushev, M. V., Forbes, I., Mudryi, A. V., Grossberg, M., Krustok, J., Beattie, N. S., ... Martin, R. W. (2015). Optical spectroscopy studies of Cu2ZnSnSe4 thin films. Thin Solid Films, 582, 154-157. https://doi.org/10.1016/j.tsf.2014.09.010
Yakushev, M.V. ; Forbes, I. ; Mudryi, A.V. ; Grossberg, M. ; Krustok, J. ; Beattie, N.S. ; Moynihan, M. ; Rockett, A. ; Martin, R.W. / Optical spectroscopy studies of Cu2ZnSnSe4 thin films. In: Thin Solid Films. 2015 ; Vol. 582. pp. 154-157.
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Yakushev, MV, Forbes, I, Mudryi, AV, Grossberg, M, Krustok, J, Beattie, NS, Moynihan, M, Rockett, A & Martin, RW 2015, 'Optical spectroscopy studies of Cu2ZnSnSe4 thin films' Thin Solid Films, vol. 582, pp. 154-157. https://doi.org/10.1016/j.tsf.2014.09.010

Optical spectroscopy studies of Cu2ZnSnSe4 thin films. / Yakushev, M.V.; Forbes, I.; Mudryi, A.V.; Grossberg, M.; Krustok, J.; Beattie, N.S.; Moynihan, M.; Rockett, A.; Martin, R.W.

In: Thin Solid Films, Vol. 582, 01.05.2015, p. 154-157.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical spectroscopy studies of Cu2ZnSnSe4 thin films

AU - Yakushev, M.V.

AU - Forbes, I.

AU - Mudryi, A.V.

AU - Grossberg, M.

AU - Krustok, J.

AU - Beattie, N.S.

AU - Moynihan, M.

AU - Rockett, A.

AU - Martin, R.W.

PY - 2015/5/1

Y1 - 2015/5/1

N2 - Cu2ZnSnSe4 thin films were synthesised by selenisation of magnetron sputtered metal precursors. The band gap determined from the absorption spectra increases from 1.01 eV at 300 K to 1.05 eV at 4.2 K. In lower quality films photoluminescence spectra show a broad, low intensity asymmetric band associated with a recombination of free electrons and holes localised on acceptors in the presence of spatial potential fluctuations. In high quality material the luminescence band becomes intense and narrow resolving two phonon replicas. Its shifts at changing excitation power suggest donor–acceptor pair recombination mechanisms. The proposed model involving two pairs of donors and acceptors is supported by the evolution of the band intensity and spectral position with temperature. Energy levels of the donors and acceptors are estimated using Arrhenius quenching analysis.

AB - Cu2ZnSnSe4 thin films were synthesised by selenisation of magnetron sputtered metal precursors. The band gap determined from the absorption spectra increases from 1.01 eV at 300 K to 1.05 eV at 4.2 K. In lower quality films photoluminescence spectra show a broad, low intensity asymmetric band associated with a recombination of free electrons and holes localised on acceptors in the presence of spatial potential fluctuations. In high quality material the luminescence band becomes intense and narrow resolving two phonon replicas. Its shifts at changing excitation power suggest donor–acceptor pair recombination mechanisms. The proposed model involving two pairs of donors and acceptors is supported by the evolution of the band intensity and spectral position with temperature. Energy levels of the donors and acceptors are estimated using Arrhenius quenching analysis.

KW - Cu2ZnSnSe4

KW - thin films

KW - photoluminescence

KW - defects

KW - absorption

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Yakushev MV, Forbes I, Mudryi AV, Grossberg M, Krustok J, Beattie NS et al. Optical spectroscopy studies of Cu2ZnSnSe4 thin films. Thin Solid Films. 2015 May 1;582:154-157. https://doi.org/10.1016/j.tsf.2014.09.010