Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etch-back

R.W. Martin, P.R. Edwards, H.S. Kim, K.S. Kim, T. Kim, I.M. Watson, M.D. Dawson, Y. Cho, T. Sands, N.W. Cheung

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The effect of an etch-back step to control the cavity length within GaN-based microcavities formed between two dielectric Bragg mirrors was investigated using photoluminescence and reflectivity. The structures are fabricated using a combination of a laser lift-off technique to separate epitaxial III-N layers from their sapphire substrates and electron-beam evaporation to deposit silica/zirconia multilayer mirrors. The photoluminescence measurements reveal cavity modes from both etched and nonetched microcavities. Similar cavity finesses are measured for 2.0 and 0.8 mm GaN cavities fabricated from the same wafer, indicating that the etchback has had little effect on the microcavity quality. For InGaN quantum well samples the etchback is shown to allow controllable reduction of the cavity length. Two etch steps of 100 nm are demonstrated with an accuracy of approximately 5%. The etchback, achieved using inductively coupled plasma and wet chemical etching, allows removal of the low-quality GaN nucleation layer, control of the cavity length, and modification of the surface resulting from lift-off.
LanguageEnglish
Article number3029
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number19
DOIs
Publication statusPublished - 5 Nov 2001

Fingerprint

cavities
spectroscopy
photoluminescence
Bragg reflectors
sapphire
deposits
etching
evaporation
quantum wells
nucleation
wafers
electron beams
mirrors
silicon dioxide
reflectance
lasers

Keywords

  • optical spectroscopy
  • GaN microcavities
  • plasma etch-back
  • nanoscience

Cite this

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title = "Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etch-back",
abstract = "The effect of an etch-back step to control the cavity length within GaN-based microcavities formed between two dielectric Bragg mirrors was investigated using photoluminescence and reflectivity. The structures are fabricated using a combination of a laser lift-off technique to separate epitaxial III-N layers from their sapphire substrates and electron-beam evaporation to deposit silica/zirconia multilayer mirrors. The photoluminescence measurements reveal cavity modes from both etched and nonetched microcavities. Similar cavity finesses are measured for 2.0 and 0.8 mm GaN cavities fabricated from the same wafer, indicating that the etchback has had little effect on the microcavity quality. For InGaN quantum well samples the etchback is shown to allow controllable reduction of the cavity length. Two etch steps of 100 nm are demonstrated with an accuracy of approximately 5{\%}. The etchback, achieved using inductively coupled plasma and wet chemical etching, allows removal of the low-quality GaN nucleation layer, control of the cavity length, and modification of the surface resulting from lift-off.",
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year = "2001",
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Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etch-back. / Martin, R.W.; Edwards, P.R.; Kim, H.S.; Kim, K.S.; Kim, T.; Watson, I.M.; Dawson, M.D.; Cho, Y.; Sands, T.; Cheung, N.W.

In: Applied Physics Letters, Vol. 79, No. 19, 3029, 05.11.2001.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etch-back

AU - Martin, R.W.

AU - Edwards, P.R.

AU - Kim, H.S.

AU - Kim, K.S.

AU - Kim, T.

AU - Watson, I.M.

AU - Dawson, M.D.

AU - Cho, Y.

AU - Sands, T.

AU - Cheung, N.W.

PY - 2001/11/5

Y1 - 2001/11/5

N2 - The effect of an etch-back step to control the cavity length within GaN-based microcavities formed between two dielectric Bragg mirrors was investigated using photoluminescence and reflectivity. The structures are fabricated using a combination of a laser lift-off technique to separate epitaxial III-N layers from their sapphire substrates and electron-beam evaporation to deposit silica/zirconia multilayer mirrors. The photoluminescence measurements reveal cavity modes from both etched and nonetched microcavities. Similar cavity finesses are measured for 2.0 and 0.8 mm GaN cavities fabricated from the same wafer, indicating that the etchback has had little effect on the microcavity quality. For InGaN quantum well samples the etchback is shown to allow controllable reduction of the cavity length. Two etch steps of 100 nm are demonstrated with an accuracy of approximately 5%. The etchback, achieved using inductively coupled plasma and wet chemical etching, allows removal of the low-quality GaN nucleation layer, control of the cavity length, and modification of the surface resulting from lift-off.

AB - The effect of an etch-back step to control the cavity length within GaN-based microcavities formed between two dielectric Bragg mirrors was investigated using photoluminescence and reflectivity. The structures are fabricated using a combination of a laser lift-off technique to separate epitaxial III-N layers from their sapphire substrates and electron-beam evaporation to deposit silica/zirconia multilayer mirrors. The photoluminescence measurements reveal cavity modes from both etched and nonetched microcavities. Similar cavity finesses are measured for 2.0 and 0.8 mm GaN cavities fabricated from the same wafer, indicating that the etchback has had little effect on the microcavity quality. For InGaN quantum well samples the etchback is shown to allow controllable reduction of the cavity length. Two etch steps of 100 nm are demonstrated with an accuracy of approximately 5%. The etchback, achieved using inductively coupled plasma and wet chemical etching, allows removal of the low-quality GaN nucleation layer, control of the cavity length, and modification of the surface resulting from lift-off.

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