Optical properties of Si nanocrystals prepared by magnetron sputtering

V. G. Baru; A. P. Chernushich; V. A. Luzanov; G. V. Stepanov; L. Yu Zakharov; K. P. O'Donnell; I. V. Bradley; N. N. Melnik; P. N. Lebedev

doi:10.1063/1.116967

Optical properties of Si nanocrystals prepared by magnetron sputtering

V. G. Baru, A. P. Chernushich, V. A. Luzanov, G. V. Stepanov, L. Yu Zakharov, K. P. O'Donnell, I. V. Bradley, N. N. Melnik, P. N. Lebedev

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Visible photoluminescence (PL), optical transmission, and Raman scattering spectra of Si nanocrystals embedded in SiO₂ matrix have been studied. Films were deposited by rf magnetron sputtering of compound SiO₂/Si targets. Films containing silicon in the form of nanocrystals clusters show intense luminescence at room temperature. Films containing only amorphous Si clusters show little or no PL. Annealing in vacuum or in specific atmosphere leads to strong change of the PL spectrum and its intensity. Results are explained by strong influence of the Si/SiO₂ interface state on integral PL emission.

Original language	English
Pages (from-to)	4148-4150
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	27
DOIs	https://doi.org/10.1063/1.116967
Publication status	Published - 30 Dec 1996

Keywords

photoluminescence
optical transmission
silicon nanocrystals

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10.1063/1.116967

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@article{b94ad48aa60a4cd2a67304236cddff26,

title = "Optical properties of Si nanocrystals prepared by magnetron sputtering",

abstract = "Visible photoluminescence (PL), optical transmission, and Raman scattering spectra of Si nanocrystals embedded in SiO2 matrix have been studied. Films were deposited by rf magnetron sputtering of compound SiO2/Si targets. Films containing silicon in the form of nanocrystals clusters show intense luminescence at room temperature. Films containing only amorphous Si clusters show little or no PL. Annealing in vacuum or in specific atmosphere leads to strong change of the PL spectrum and its intensity. Results are explained by strong influence of the Si/SiO2 interface state on integral PL emission.",

keywords = "photoluminescence, optical transmission, silicon nanocrystals",

author = "Baru, {V. G.} and Chernushich, {A. P.} and Luzanov, {V. A.} and Stepanov, {G. V.} and Zakharov, {L. Yu} and O'Donnell, {K. P.} and Bradley, {I. V.} and Melnik, {N. N.} and Lebedev, {P. N.}",

year = "1996",

month = dec,

day = "30",

doi = "10.1063/1.116967",

language = "English",

volume = "69",

pages = "4148--4150",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Optical properties of Si nanocrystals prepared by magnetron sputtering

AU - Baru, V. G.

AU - Chernushich, A. P.

AU - Luzanov, V. A.

AU - Stepanov, G. V.

AU - Zakharov, L. Yu

AU - O'Donnell, K. P.

AU - Bradley, I. V.

AU - Melnik, N. N.

AU - Lebedev, P. N.

PY - 1996/12/30

Y1 - 1996/12/30

N2 - Visible photoluminescence (PL), optical transmission, and Raman scattering spectra of Si nanocrystals embedded in SiO2 matrix have been studied. Films were deposited by rf magnetron sputtering of compound SiO2/Si targets. Films containing silicon in the form of nanocrystals clusters show intense luminescence at room temperature. Films containing only amorphous Si clusters show little or no PL. Annealing in vacuum or in specific atmosphere leads to strong change of the PL spectrum and its intensity. Results are explained by strong influence of the Si/SiO2 interface state on integral PL emission.

AB - Visible photoluminescence (PL), optical transmission, and Raman scattering spectra of Si nanocrystals embedded in SiO2 matrix have been studied. Films were deposited by rf magnetron sputtering of compound SiO2/Si targets. Films containing silicon in the form of nanocrystals clusters show intense luminescence at room temperature. Films containing only amorphous Si clusters show little or no PL. Annealing in vacuum or in specific atmosphere leads to strong change of the PL spectrum and its intensity. Results are explained by strong influence of the Si/SiO2 interface state on integral PL emission.

KW - photoluminescence

KW - optical transmission

KW - silicon nanocrystals

UR - http://www.scopus.com/inward/record.url?scp=0030411058&partnerID=8YFLogxK

U2 - 10.1063/1.116967

DO - 10.1063/1.116967

M3 - Article

AN - SCOPUS:0030411058

SN - 0003-6951

VL - 69

SP - 4148

EP - 4150

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 27

ER -

Optical properties of Si nanocrystals prepared by magnetron sputtering

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Keywords

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