Optical properties of Si nanocrystals prepared by magnetron sputtering

V. G. Baru, A. P. Chernushich, V. A. Luzanov, G. V. Stepanov, L. Yu Zakharov, K. P. O'Donnell, I. V. Bradley, N. N. Melnik, P. N. Lebedev

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Abstract

Visible photoluminescence (PL), optical transmission, and Raman scattering spectra of Si nanocrystals embedded in SiO2 matrix have been studied. Films were deposited by rf magnetron sputtering of compound SiO2/Si targets. Films containing silicon in the form of nanocrystals clusters show intense luminescence at room temperature. Films containing only amorphous Si clusters show little or no PL. Annealing in vacuum or in specific atmosphere leads to strong change of the PL spectrum and its intensity. Results are explained by strong influence of the Si/SiO2 interface state on integral PL emission.

Original languageEnglish
Pages (from-to)4148-4150
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number27
DOIs
Publication statusPublished - 30 Dec 1996

Keywords

  • photoluminescence
  • optical transmission
  • silicon nanocrystals

Cite this

Baru, V. G., Chernushich, A. P., Luzanov, V. A., Stepanov, G. V., Zakharov, L. Y., O'Donnell, K. P., Bradley, I. V., Melnik, N. N., & Lebedev, P. N. (1996). Optical properties of Si nanocrystals prepared by magnetron sputtering. Applied Physics Letters, 69(27), 4148-4150. https://doi.org/10.1063/1.116967