Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths

Lay Theng Tan; Robert W. Martin; Ian M. Watson; Kevin P. O'Donnell

Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths

Lay Theng Tan^*, Robert W. Martin, Ian M. Watson, Kevin P. O'Donnell

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

Single GaN quantum wells in the nearly lattice-matched GaN/Al _1-xIn_xN system have been studied using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The structures were grown on free-standing GaN and sapphire substrates. Selectively excited PL is able to distinguish luminescence originating from the wells, barriers and underlying GaN buffer layers. The PL spectra show the quantum well transition energy decreases as the well-width increases. This manifestation of the quantum confined Stark effect (QCSE) results from intense built-in electric fields. Power dependent PL measurements provide information on the screening of the internal fields. PLE data provide an estimation of the band-gap of nearly lattice-matched Al _1-xIn_xN layer.

Original language	English
Title of host publication	Advances in III-V Nitride Semiconductor Materials and Devices
Place of Publication	Warrendale, Pennysylvania
Pages	196-198
Number of pages	3
Volume	955
Publication status	Published - 1 Dec 2006
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: 27 Nov 2006 → 1 Dec 2006

Conference

Conference	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	27/11/06 → 1/12/06

Keywords

AlInGaN epilayers
GaN layers
quantum wells

Cite this

@inproceedings{4abb850a8b4f4768aaaba17f771a63b5,

title = "Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths",

abstract = "Single GaN quantum wells in the nearly lattice-matched GaN/Al 1-xInxN system have been studied using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The structures were grown on free-standing GaN and sapphire substrates. Selectively excited PL is able to distinguish luminescence originating from the wells, barriers and underlying GaN buffer layers. The PL spectra show the quantum well transition energy decreases as the well-width increases. This manifestation of the quantum confined Stark effect (QCSE) results from intense built-in electric fields. Power dependent PL measurements provide information on the screening of the internal fields. PLE data provide an estimation of the band-gap of nearly lattice-matched Al 1-xInxN layer.",

keywords = "AlInGaN epilayers, GaN layers, quantum wells",

author = "Tan, {Lay Theng} and Martin, {Robert W.} and Watson, {Ian M.} and O'Donnell, {Kevin P.}",

year = "2006",

month = dec,

day = "1",

language = "English",

isbn = "9781604234114",

volume = "955",

pages = "196--198",

booktitle = "Advances in III-V Nitride Semiconductor Materials and Devices",

note = "2006 MRS Fall Meeting ; Conference date: 27-11-2006 Through 01-12-2006",

}

Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths. / Tan, Lay Theng; Martin, Robert W.; Watson, Ian M. et al.
Advances in III-V Nitride Semiconductor Materials and Devices. Vol. 955 Warrendale, Pennysylvania, 2006. p. 196-198.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

TY - GEN

T1 - Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths

AU - Tan, Lay Theng

AU - Martin, Robert W.

AU - Watson, Ian M.

AU - O'Donnell, Kevin P.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Single GaN quantum wells in the nearly lattice-matched GaN/Al 1-xInxN system have been studied using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The structures were grown on free-standing GaN and sapphire substrates. Selectively excited PL is able to distinguish luminescence originating from the wells, barriers and underlying GaN buffer layers. The PL spectra show the quantum well transition energy decreases as the well-width increases. This manifestation of the quantum confined Stark effect (QCSE) results from intense built-in electric fields. Power dependent PL measurements provide information on the screening of the internal fields. PLE data provide an estimation of the band-gap of nearly lattice-matched Al 1-xInxN layer.

AB - Single GaN quantum wells in the nearly lattice-matched GaN/Al 1-xInxN system have been studied using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The structures were grown on free-standing GaN and sapphire substrates. Selectively excited PL is able to distinguish luminescence originating from the wells, barriers and underlying GaN buffer layers. The PL spectra show the quantum well transition energy decreases as the well-width increases. This manifestation of the quantum confined Stark effect (QCSE) results from intense built-in electric fields. Power dependent PL measurements provide information on the screening of the internal fields. PLE data provide an estimation of the band-gap of nearly lattice-matched Al 1-xInxN layer.

KW - AlInGaN epilayers

KW - GaN layers

KW - quantum wells

UR - http://www.scopus.com/inward/record.url?scp=40949101430&partnerID=8YFLogxK

M3 - Conference contribution book

AN - SCOPUS:40949101430

SN - 9781604234114

VL - 955

SP - 196

EP - 198

BT - Advances in III-V Nitride Semiconductor Materials and Devices

CY - Warrendale, Pennysylvania

T2 - 2006 MRS Fall Meeting

Y2 - 27 November 2006 through 1 December 2006

ER -

Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths

Abstract

Conference

Keywords

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