Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

Single GaN quantum wells in the nearly lattice-matched GaN/Al 1-xInxN system have been studied using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The structures were grown on free-standing GaN and sapphire substrates. Selectively excited PL is able to distinguish luminescence originating from the wells, barriers and underlying GaN buffer layers. The PL spectra show the quantum well transition energy decreases as the well-width increases. This manifestation of the quantum confined Stark effect (QCSE) results from intense built-in electric fields. Power dependent PL measurements provide information on the screening of the internal fields. PLE data provide an estimation of the band-gap of nearly lattice-matched Al 1-xInxN layer.

LanguageEnglish
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
Place of PublicationWarrendale, Pennysylvania
Pages196-198
Number of pages3
Volume955
Publication statusPublished - 1 Dec 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 27 Nov 20061 Dec 2006

Conference

Conference2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period27/11/061/12/06

Fingerprint

Semiconductor quantum wells
Photoluminescence
Optical properties
Stark effect
Aluminum Oxide
Buffer layers
Sapphire
Luminescence
Screening
Energy gap
Electric fields
Spectroscopy
Substrates

Keywords

  • AlInGaN epilayers
  • GaN layers
  • quantum wells

Cite this

Tan, L. T., Martin, R. W., Watson, I. M., & O'Donnell, K. P. (2006). Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths. In Advances in III-V Nitride Semiconductor Materials and Devices (Vol. 955, pp. 196-198). Warrendale, Pennysylvania.
Tan, Lay Theng ; Martin, Robert W. ; Watson, Ian M. ; O'Donnell, Kevin P. / Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths. Advances in III-V Nitride Semiconductor Materials and Devices. Vol. 955 Warrendale, Pennysylvania, 2006. pp. 196-198
@inproceedings{4abb850a8b4f4768aaaba17f771a63b5,
title = "Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths",
abstract = "Single GaN quantum wells in the nearly lattice-matched GaN/Al 1-xInxN system have been studied using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The structures were grown on free-standing GaN and sapphire substrates. Selectively excited PL is able to distinguish luminescence originating from the wells, barriers and underlying GaN buffer layers. The PL spectra show the quantum well transition energy decreases as the well-width increases. This manifestation of the quantum confined Stark effect (QCSE) results from intense built-in electric fields. Power dependent PL measurements provide information on the screening of the internal fields. PLE data provide an estimation of the band-gap of nearly lattice-matched Al 1-xInxN layer.",
keywords = "AlInGaN epilayers, GaN layers, quantum wells",
author = "Tan, {Lay Theng} and Martin, {Robert W.} and Watson, {Ian M.} and O'Donnell, {Kevin P.}",
year = "2006",
month = "12",
day = "1",
language = "English",
isbn = "9781604234114",
volume = "955",
pages = "196--198",
booktitle = "Advances in III-V Nitride Semiconductor Materials and Devices",

}

Tan, LT, Martin, RW, Watson, IM & O'Donnell, KP 2006, Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths. in Advances in III-V Nitride Semiconductor Materials and Devices. vol. 955, Warrendale, Pennysylvania, pp. 196-198, 2006 MRS Fall Meeting, Boston, MA, United States, 27/11/06.

Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths. / Tan, Lay Theng; Martin, Robert W.; Watson, Ian M.; O'Donnell, Kevin P.

Advances in III-V Nitride Semiconductor Materials and Devices. Vol. 955 Warrendale, Pennysylvania, 2006. p. 196-198.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths

AU - Tan, Lay Theng

AU - Martin, Robert W.

AU - Watson, Ian M.

AU - O'Donnell, Kevin P.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Single GaN quantum wells in the nearly lattice-matched GaN/Al 1-xInxN system have been studied using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The structures were grown on free-standing GaN and sapphire substrates. Selectively excited PL is able to distinguish luminescence originating from the wells, barriers and underlying GaN buffer layers. The PL spectra show the quantum well transition energy decreases as the well-width increases. This manifestation of the quantum confined Stark effect (QCSE) results from intense built-in electric fields. Power dependent PL measurements provide information on the screening of the internal fields. PLE data provide an estimation of the band-gap of nearly lattice-matched Al 1-xInxN layer.

AB - Single GaN quantum wells in the nearly lattice-matched GaN/Al 1-xInxN system have been studied using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The structures were grown on free-standing GaN and sapphire substrates. Selectively excited PL is able to distinguish luminescence originating from the wells, barriers and underlying GaN buffer layers. The PL spectra show the quantum well transition energy decreases as the well-width increases. This manifestation of the quantum confined Stark effect (QCSE) results from intense built-in electric fields. Power dependent PL measurements provide information on the screening of the internal fields. PLE data provide an estimation of the band-gap of nearly lattice-matched Al 1-xInxN layer.

KW - AlInGaN epilayers

KW - GaN layers

KW - quantum wells

UR - http://www.scopus.com/inward/record.url?scp=40949101430&partnerID=8YFLogxK

M3 - Conference contribution book

SN - 9781604234114

VL - 955

SP - 196

EP - 198

BT - Advances in III-V Nitride Semiconductor Materials and Devices

CY - Warrendale, Pennysylvania

ER -

Tan LT, Martin RW, Watson IM, O'Donnell KP. Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths. In Advances in III-V Nitride Semiconductor Materials and Devices. Vol. 955. Warrendale, Pennysylvania. 2006. p. 196-198