Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths

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Abstract

Single GaN quantum wells in the nearly lattice-matched GaN/Al 1-xInxN system have been studied using photoluminescence (PL) and PL excitation (PLE) spectroscopy. The structures were grown on free-standing GaN and sapphire substrates. Selectively excited PL is able to distinguish luminescence originating from the wells, barriers and underlying GaN buffer layers. The PL spectra show the quantum well transition energy decreases as the well-width increases. This manifestation of the quantum confined Stark effect (QCSE) results from intense built-in electric fields. Power dependent PL measurements provide information on the screening of the internal fields. PLE data provide an estimation of the band-gap of nearly lattice-matched Al 1-xInxN layer.

Original languageEnglish
Title of host publicationAdvances in III-V Nitride Semiconductor Materials and Devices
Place of PublicationWarrendale, Pennysylvania
Pages196-198
Number of pages3
Volume955
Publication statusPublished - 1 Dec 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 27 Nov 20061 Dec 2006

Conference

Conference2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period27/11/061/12/06

Keywords

  • AlInGaN epilayers
  • GaN layers
  • quantum wells

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    Tan, L. T., Martin, R. W., Watson, I. M., & O'Donnell, K. P. (2006). Optical properties of nearly lattice-matched AlInN/GaN single quantum wells with varying well-widths. In Advances in III-V Nitride Semiconductor Materials and Devices (Vol. 955, pp. 196-198).