Optical properties of high quality Cu2ZnSnSe4 thin films

F. Luckert, D. I. Hamilton, M. V. Yakushev, N. S. Beattie, G. Zoppi, M. Moynihan, I. Forbes, A. V. Karotki, A. V. Mudryi, M. Grossberg, J. Krustok, R. W. Martin

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Abstract

Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.

Original languageEnglish
Article number062104
Pages (from-to)-
Number of pages3
JournalApplied Physics Letters
Volume99
Issue number6
DOIs
Publication statusPublished - 8 Aug 2011

Keywords

  • photoluminescence
  • selenisation
  • dependence
  • energy
  • copper compounds
  • excitons
  • phonons
  • photoionisation
  • Raman spectra
  • semiconductor thin films
  • sputter deposition
  • tin compounds
  • zinc compounds
  • TIC - Bionanotechnology

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