Optical properties of high quality Cu2ZnSnSe4 thin films

F. Luckert, D. I. Hamilton, M. V. Yakushev, N. S. Beattie, G. Zoppi, M. Moynihan, I. Forbes, A. V. Karotki, A. V. Mudryi, M. Grossberg, J. Krustok, R. W. Martin

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.

LanguageEnglish
Article number062104
Pages-
Number of pages3
JournalApplied Physics Letters
Volume99
Issue number6
DOIs
Publication statusPublished - 8 Aug 2011

Fingerprint

optical properties
thin films
replicas
molybdenum
optical spectrum
magnetron sputtering
optical absorption
absorption spectra
photoluminescence
ionization
energy
glass
room temperature

Keywords

  • photoluminescence
  • selenisation
  • dependence
  • energy
  • copper compounds
  • excitons
  • phonons
  • photoionisation
  • Raman spectra
  • semiconductor thin films
  • sputter deposition
  • tin compounds
  • zinc compounds
  • TIC - Bionanotechnology

Cite this

Luckert, F., Hamilton, D. I., Yakushev, M. V., Beattie, N. S., Zoppi, G., Moynihan, M., ... Martin, R. W. (2011). Optical properties of high quality Cu2ZnSnSe4 thin films. Applied Physics Letters, 99(6), -. [062104]. https://doi.org/10.1063/1.3624827
Luckert, F. ; Hamilton, D. I. ; Yakushev, M. V. ; Beattie, N. S. ; Zoppi, G. ; Moynihan, M. ; Forbes, I. ; Karotki, A. V. ; Mudryi, A. V. ; Grossberg, M. ; Krustok, J. ; Martin, R. W. / Optical properties of high quality Cu2ZnSnSe4 thin films. In: Applied Physics Letters. 2011 ; Vol. 99, No. 6. pp. -.
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abstract = "Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra.",
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Luckert, F, Hamilton, DI, Yakushev, MV, Beattie, NS, Zoppi, G, Moynihan, M, Forbes, I, Karotki, AV, Mudryi, AV, Grossberg, M, Krustok, J & Martin, RW 2011, 'Optical properties of high quality Cu2ZnSnSe4 thin films' Applied Physics Letters, vol. 99, no. 6, 062104, pp. -. https://doi.org/10.1063/1.3624827

Optical properties of high quality Cu2ZnSnSe4 thin films. / Luckert, F.; Hamilton, D. I.; Yakushev, M. V.; Beattie, N. S.; Zoppi, G.; Moynihan, M.; Forbes, I.; Karotki, A. V.; Mudryi, A. V.; Grossberg, M.; Krustok, J.; Martin, R. W.

In: Applied Physics Letters, Vol. 99, No. 6, 062104, 08.08.2011, p. -.

Research output: Contribution to journalArticle

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T1 - Optical properties of high quality Cu2ZnSnSe4 thin films

AU - Luckert, F.

AU - Hamilton, D. I.

AU - Yakushev, M. V.

AU - Beattie, N. S.

AU - Zoppi, G.

AU - Moynihan, M.

AU - Forbes, I.

AU - Karotki, A. V.

AU - Mudryi, A. V.

AU - Grossberg, M.

AU - Krustok, J.

AU - Martin, R. W.

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KW - excitons

KW - phonons

KW - photoionisation

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KW - semiconductor thin films

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KW - zinc compounds

KW - TIC - Bionanotechnology

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Luckert F, Hamilton DI, Yakushev MV, Beattie NS, Zoppi G, Moynihan M et al. Optical properties of high quality Cu2ZnSnSe4 thin films. Applied Physics Letters. 2011 Aug 8;99(6):-. 062104. https://doi.org/10.1063/1.3624827