Optical linewidths of InGaN light emitting diodes and epilayers

K. P. O'Donnell, T. Breitkopf, H. Kalt, W. Van Der Stricht, I. Moerman, P. Demeester, P. G. Middleton

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism.

Original languageEnglish
Pages (from-to)1843-1845
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number14
DOIs
Publication statusPublished - 7 Apr 1997

    Fingerprint

Keywords

  • optical linewidth
  • electroluminescence
  • InGaN
  • lght emitting diode

Cite this

O'Donnell, K. P., Breitkopf, T., Kalt, H., Van Der Stricht, W., Moerman, I., Demeester, P., & Middleton, P. G. (1997). Optical linewidths of InGaN light emitting diodes and epilayers. Applied Physics Letters, 70(14), 1843-1845. https://doi.org/10.1063/1.118728