Abstract
A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism.
| Original language | English |
|---|---|
| Pages (from-to) | 1843-1845 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 70 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 7 Apr 1997 |
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Keywords
- optical linewidth
- electroluminescence
- InGaN
- lght emitting diode
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Optical linewidths of InGaN light emitting diodes and epilayers. / O'Donnell, K. P.; Breitkopf, T.; Kalt, H.; Van Der Stricht, W.; Moerman, I.; Demeester, P.; Middleton, P. G.
In: Applied Physics Letters, Vol. 70, No. 14, 07.04.1997, p. 1843-1845.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical linewidths of InGaN light emitting diodes and epilayers
AU - O'Donnell, K. P.
AU - Breitkopf, T.
AU - Kalt, H.
AU - Van Der Stricht, W.
AU - Moerman, I.
AU - Demeester, P.
AU - Middleton, P. G.
PY - 1997/4/7
Y1 - 1997/4/7
N2 - A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism.
AB - A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism.
KW - optical linewidth
KW - electroluminescence
KW - InGaN
KW - lght emitting diode
UR - http://www.scopus.com/inward/record.url?scp=0000710448&partnerID=8YFLogxK
U2 - 10.1063/1.118728
DO - 10.1063/1.118728
M3 - Article
VL - 70
SP - 1843
EP - 1845
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
ER -