Optical linewidths of InGaN light emitting diodes and epilayers

K. P. O'Donnell; T. Breitkopf; H. Kalt; W. Van Der Stricht; I. Moerman; P. Demeester; P. G. Middleton

doi:10.1063/1.118728

Optical linewidths of InGaN light emitting diodes and epilayers

K. P. O'Donnell, T. Breitkopf, H. Kalt, W. Van Der Stricht, I. Moerman, P. Demeester, P. G. Middleton

Physics

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism.

Original language	English
Pages (from-to)	1843-1845
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	14
DOIs	https://doi.org/10.1063/1.118728
Publication status	Published - 7 Apr 1997

Keywords

optical linewidth
electroluminescence
InGaN
lght emitting diode

Access to Document

10.1063/1.118728

Link to publication in Scopus

Cite this

@article{d1e2320c1aed4b109fdd978aa3fff75c,

title = "Optical linewidths of InGaN light emitting diodes and epilayers",

abstract = "A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism.",

keywords = "optical linewidth, electroluminescence, InGaN, lght emitting diode",

author = "O'Donnell, {K. P.} and T. Breitkopf and H. Kalt and {Van Der Stricht}, W. and I. Moerman and P. Demeester and Middleton, {P. G.}",

year = "1997",

month = apr,

day = "7",

doi = "10.1063/1.118728",

language = "English",

volume = "70",

pages = "1843--1845",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "14",

}

TY - JOUR

T1 - Optical linewidths of InGaN light emitting diodes and epilayers

AU - O'Donnell, K. P.

AU - Breitkopf, T.

AU - Kalt, H.

AU - Van Der Stricht, W.

AU - Moerman, I.

AU - Demeester, P.

AU - Middleton, P. G.

PY - 1997/4/7

Y1 - 1997/4/7

N2 - A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism.

AB - A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism.

KW - optical linewidth

KW - electroluminescence

KW - InGaN

KW - lght emitting diode

UR - http://www.scopus.com/inward/record.url?scp=0000710448&partnerID=8YFLogxK

U2 - 10.1063/1.118728

DO - 10.1063/1.118728

M3 - Article

AN - SCOPUS:0000710448

VL - 70

SP - 1843

EP - 1845

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -