Optical linewidths of InGaN light emitting diodes and epilayers

K. P. O'Donnell; T. Breitkopf; H. Kalt; W. Van Der Stricht; I. Moerman; P. Demeester; P. G. Middleton

doi:10.1063/1.118728

Optical linewidths of InGaN light emitting diodes and epilayers

K. P. O'Donnell^*, T. Breitkopf, H. Kalt, W. Van Der Stricht, I. Moerman, P. Demeester, P. G. Middleton

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism.

Original language	English
Pages (from-to)	1843-1845
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	14
DOIs	https://doi.org/10.1063/1.118728
Publication status	Published - 7 Apr 1997

Keywords

optical linewidth
electroluminescence
InGaN
lght emitting diode

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10.1063/1.118728

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abstract = "A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism.",

keywords = "optical linewidth, electroluminescence, InGaN, lght emitting diode",

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AU - O'Donnell, K. P.

AU - Breitkopf, T.

AU - Kalt, H.

AU - Van Der Stricht, W.

AU - Moerman, I.

AU - Demeester, P.

AU - Middleton, P. G.

PY - 1997/4/7

Y1 - 1997/4/7

N2 - A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism.

AB - A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism.

KW - optical linewidth

KW - electroluminescence

KW - InGaN

KW - lght emitting diode

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Optical linewidths of InGaN light emitting diodes and epilayers

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Keywords

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