Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content

H.D. Sun, M. Hetterich, M.D. Dawson, A.Y. Egorov, D. Bernklau, H. Riechert

Research output: Contribution to journalArticle

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Abstract

The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration.
LanguageEnglish
Pages1380-1385
Number of pages5
JournalJournal of Applied Physics
Volume92
Issue number3
DOIs
Publication statusPublished - Aug 2002

Fingerprint

quantum wells
photoluminescence
nitrogen
excitation
temperature dependence
excitons
optical properties
energy
spectroscopy
temperature

Keywords

  • gallium arsenide
  • indium compounds
  • gallium compounds
  • III-V semiconductors
  • semiconductor quantum wells
  • semiconductor superlattices
  • stoichiometry
  • photoluminescence
  • spectral line breadth
  • excitons

Cite this

Sun, H.D. ; Hetterich, M. ; Dawson, M.D. ; Egorov, A.Y. ; Bernklau, D. ; Riechert, H. / Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 3. pp. 1380-1385.
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abstract = "The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration.",
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Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content. / Sun, H.D.; Hetterich, M.; Dawson, M.D.; Egorov, A.Y.; Bernklau, D.; Riechert, H.

In: Journal of Applied Physics, Vol. 92, No. 3, 08.2002, p. 1380-1385.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content

AU - Sun, H.D.

AU - Hetterich, M.

AU - Dawson, M.D.

AU - Egorov, A.Y.

AU - Bernklau, D.

AU - Riechert, H.

PY - 2002/8

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N2 - The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration.

AB - The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration.

KW - gallium arsenide

KW - indium compounds

KW - gallium compounds

KW - III-V semiconductors

KW - semiconductor quantum wells

KW - semiconductor superlattices

KW - stoichiometry

KW - photoluminescence

KW - spectral line breadth

KW - excitons

UR - http://link.aip.org/link/?JAPIAU/92/1380/1

UR - http://dx.doi.org/10.1063/1.1489716

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DO - 10.1063/1.1489716

M3 - Article

VL - 92

SP - 1380

EP - 1385

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -