Abstract
| Language | English |
|---|---|
| Pages | 1380-1385 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 92 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Aug 2002 |
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Keywords
- gallium arsenide
- indium compounds
- gallium compounds
- III-V semiconductors
- semiconductor quantum wells
- semiconductor superlattices
- stoichiometry
- photoluminescence
- spectral line breadth
- excitons
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Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content. / Sun, H.D.; Hetterich, M.; Dawson, M.D.; Egorov, A.Y.; Bernklau, D.; Riechert, H.
In: Journal of Applied Physics, Vol. 92, No. 3, 08.2002, p. 1380-1385.Research output: Contribution to journal › Article
TY - JOUR
T1 - Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content
AU - Sun, H.D.
AU - Hetterich, M.
AU - Dawson, M.D.
AU - Egorov, A.Y.
AU - Bernklau, D.
AU - Riechert, H.
PY - 2002/8
Y1 - 2002/8
N2 - The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration.
AB - The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration.
KW - gallium arsenide
KW - indium compounds
KW - gallium compounds
KW - III-V semiconductors
KW - semiconductor quantum wells
KW - semiconductor superlattices
KW - stoichiometry
KW - photoluminescence
KW - spectral line breadth
KW - excitons
UR - http://link.aip.org/link/?JAPIAU/92/1380/1
UR - http://dx.doi.org/10.1063/1.1489716
U2 - 10.1063/1.1489716
DO - 10.1063/1.1489716
M3 - Article
VL - 92
SP - 1380
EP - 1385
JO - Journal of Applied Physics
T2 - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 3
ER -