Abstract
The optical properties of GaInNAs/GaAs multi-quantum wells were investigated by photoluminescence excitation (PLE) spectroscopy, as well as by photoluminescence (PL), under various excitation intensities and at various temperatures. The PLE spectra demonstrated pronounced excitonic features and the corresponding transitions were identified. At low temperatures the PL spectra were sensitive to the excitation intensity. Under fixed excitation intensity, both the peak energy and the linewidth of photoluminescence showed anomalous temperature dependence, specifically an S-shaped temperature dependence of the peak energy and a N-shaped temperature dependence of linewidth in the PL spectra. The observed results are explained consistently in terms of the exciton localization effect due to the local fluctuations of nitrogen concentration.
| Original language | English |
|---|---|
| Pages (from-to) | 1380-1385 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 92 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Aug 2002 |
Keywords
- gallium arsenide
- indium compounds
- gallium compounds
- III-V semiconductors
- semiconductor quantum wells
- semiconductor superlattices
- stoichiometry
- photoluminescence
- spectral line breadth
- excitons
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Sun, H. D., Hetterich, M., Dawson, M. D., Egorov, A. Y., Bernklau, D., & Riechert, H. (2002). Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content. Journal of Applied Physics, 92(3), 1380-1385. https://doi.org/10.1063/1.1489716