Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition

Z. Li; L. Wang; L. Jiu; J. Bruckbauer; Y. Gong; Y. Zhang; J. Bai; R. W. Martin; T. Wang

doi:10.1063/1.4977428

Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, T. Wang

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Abstract

Exciton localization disturbs uniform population inversion, leading to an increase in threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet LDs, generating exciton localization. Photoluminescence and cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition in order to study the optical properties of both the near-band-edge (NBE) emission and the basal-plane stacking faults (BSFs) related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts exhibits that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN.

Original language	English
Article number	091102
Number of pages	5
Journal	Applied Physics Letters
Volume	110
Issue number	9
Early online date	27 Feb 2017
DOIs	https://doi.org/10.1063/1.4977428
Publication status	Published - 27 Feb 2017

Keywords

exciton localization
uniform population inversion
threshold current
lasing
aluminium
ultra violet laser diodes
photoluminescence
temperature dependence
near-band-edge emission
basal-plane stacking faults

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10.1063/1.4977428Licence: CC BY 4.0

Li-etal-APL2017-Optical-investigation-of-semi-polar-AlGaNFinal published version, 1.66 MBLicence: CC BY 4.0

Cite this

@article{904a83bd898146abbd18b2dd70a0f4a6,

title = "Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition",

abstract = "Exciton localization disturbs uniform population inversion, leading to an increase in threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet LDs, generating exciton localization. Photoluminescence and cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition in order to study the optical properties of both the near-band-edge (NBE) emission and the basal-plane stacking faults (BSFs) related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts exhibits that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN.",

keywords = "exciton localization, uniform population inversion, threshold current, lasing, aluminium, ultra violet laser diodes, photoluminescence, temperature dependence, near-band-edge emission, basal-plane stacking faults",

author = "Z. Li and L. Wang and L. Jiu and J. Bruckbauer and Y. Gong and Y. Zhang and J. Bai and Martin, {R. W.} and T. Wang",

year = "2017",

month = feb,

day = "27",

doi = "10.1063/1.4977428",

language = "English",

volume = "110",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "9",

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TY - JOUR

T1 - Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition

AU - Li, Z.

AU - Wang, L.

AU - Jiu, L.

AU - Bruckbauer, J.

AU - Gong, Y.

AU - Zhang, Y.

AU - Bai, J.

AU - Martin, R. W.

AU - Wang, T.

PY - 2017/2/27

Y1 - 2017/2/27

N2 - Exciton localization disturbs uniform population inversion, leading to an increase in threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet LDs, generating exciton localization. Photoluminescence and cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition in order to study the optical properties of both the near-band-edge (NBE) emission and the basal-plane stacking faults (BSFs) related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts exhibits that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN.

AB - Exciton localization disturbs uniform population inversion, leading to an increase in threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet LDs, generating exciton localization. Photoluminescence and cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition in order to study the optical properties of both the near-band-edge (NBE) emission and the basal-plane stacking faults (BSFs) related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts exhibits that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN.

KW - exciton localization

KW - uniform population inversion

KW - threshold current

KW - lasing

KW - aluminium

KW - ultra violet laser diodes

KW - photoluminescence

KW - temperature dependence

KW - near-band-edge emission

KW - basal-plane stacking faults

UR - http://aip.scitation.org/journal/apl

U2 - 10.1063/1.4977428

DO - 10.1063/1.4977428

M3 - Article

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 091102

ER -

Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition

Abstract

Keywords

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Manufacturing of nano-engineered III-nitride semiconductors

Advanced III-nitride materials for next generation UV emitters used in water purification, environmental protection and local network communication

Next generation white LEDs using hybrid inorganic/organic semiconductor nanostructures

Dataset for "Optical Investigation of Semi-polar (11-22) AlGaN with High Al Composition"

ESEM Quanta 250

Cite this

Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Projects

Manufacturing of nano-engineered III-nitride semiconductors

Advanced III-nitride materials for next generation UV emitters used in water purification, environmental protection and local network communication

Next generation white LEDs using hybrid inorganic/organic semiconductor nanostructures

Datasets

Dataset for "Optical Investigation of Semi-polar (11-22) AlGaN with High Al Composition"

Equipment

ESEM Quanta 250

Cite this