Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, T. Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Exciton localization disturbs uniform population inversion, leading to an increase in threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet LDs, generating exciton localization. Photoluminescence and cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition in order to study the optical properties of both the near-band-edge (NBE) emission and the basal-plane stacking faults (BSFs) related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts exhibits that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN.
LanguageEnglish
Article number091102
Number of pages5
JournalApplied Physics Letters
Volume110
Issue number9
Early online date27 Feb 2017
DOIs
Publication statusPublished - 27 Feb 2017

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excitons
population inversion
cathodoluminescence
threshold currents
crystal defects
lasing
photoluminescence
optical properties
fabrication

Keywords

  • exciton localization
  • uniform population inversion
  • threshold current
  • lasing
  • aluminium
  • ultra violet laser diodes
  • photoluminescence
  • temperature dependence
  • near-band-edge emission
  • basal-plane stacking faults

Cite this

Li, Z. ; Wang, L. ; Jiu, L. ; Bruckbauer, J. ; Gong, Y. ; Zhang, Y. ; Bai, J. ; Martin, R. W. ; Wang, T. / Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition. In: Applied Physics Letters. 2017 ; Vol. 110, No. 9.
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abstract = "Exciton localization disturbs uniform population inversion, leading to an increase in threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet LDs, generating exciton localization. Photoluminescence and cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition in order to study the optical properties of both the near-band-edge (NBE) emission and the basal-plane stacking faults (BSFs) related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts exhibits that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN.",
keywords = "exciton localization, uniform population inversion, threshold current, lasing, aluminium, ultra violet laser diodes, photoluminescence, temperature dependence, near-band-edge emission, basal-plane stacking faults",
author = "Z. Li and L. Wang and L. Jiu and J. Bruckbauer and Y. Gong and Y. Zhang and J. Bai and Martin, {R. W.} and T. Wang",
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Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition. / Li, Z.; Wang, L.; Jiu, L.; Bruckbauer, J.; Gong, Y.; Zhang, Y.; Bai, J.; Martin, R. W.; Wang, T.

In: Applied Physics Letters, Vol. 110, No. 9, 091102, 27.02.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition

AU - Li, Z.

AU - Wang, L.

AU - Jiu, L.

AU - Bruckbauer, J.

AU - Gong, Y.

AU - Zhang, Y.

AU - Bai, J.

AU - Martin, R. W.

AU - Wang, T.

PY - 2017/2/27

Y1 - 2017/2/27

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AB - Exciton localization disturbs uniform population inversion, leading to an increase in threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet LDs, generating exciton localization. Photoluminescence and cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition in order to study the optical properties of both the near-band-edge (NBE) emission and the basal-plane stacking faults (BSFs) related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts exhibits that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN.

KW - exciton localization

KW - uniform population inversion

KW - threshold current

KW - lasing

KW - aluminium

KW - ultra violet laser diodes

KW - photoluminescence

KW - temperature dependence

KW - near-band-edge emission

KW - basal-plane stacking faults

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U2 - 10.1063/1.4977428

DO - 10.1063/1.4977428

M3 - Article

VL - 110

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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M1 - 091102

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