Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, T. Wang

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)
87 Downloads (Pure)


Exciton localization disturbs uniform population inversion, leading to an increase in threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet LDs, generating exciton localization. Photoluminescence and cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition in order to study the optical properties of both the near-band-edge (NBE) emission and the basal-plane stacking faults (BSFs) related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts exhibits that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN.
Original languageEnglish
Article number091102
Number of pages5
JournalApplied Physics Letters
Issue number9
Early online date27 Feb 2017
Publication statusPublished - 27 Feb 2017


  • exciton localization
  • uniform population inversion
  • threshold current
  • lasing
  • aluminium
  • ultra violet laser diodes
  • photoluminescence
  • temperature dependence
  • near-band-edge emission
  • basal-plane stacking faults


Dive into the research topics of 'Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition'. Together they form a unique fingerprint.

Cite this