Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition

Z. Li, L. Wang, L. Jiu, J. Bruckbauer, Y. Gong, Y. Zhang, J. Bai, R. W. Martin, T. Wang

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Abstract

Exciton localization disturbs uniform population inversion, leading to an increase in threshold current for lasing. High Al content AlGaN is required for the fabrication of deep ultra-violet LDs, generating exciton localization. Photoluminescence and cathodoluminescence measurements have been performed on high quality semi-polar (11-22) AlxGa1-xN alloys with high Al composition in order to study the optical properties of both the near-band-edge (NBE) emission and the basal-plane stacking faults (BSFs) related emission, demonstrating different behaviours. Further comparison with the exciton localization of their c-plane counterparts exhibits that the exciton localization in semi-polar (11-22) AlGaN is much smaller than that in c-plane AlGaN.
Original languageEnglish
Article number091102
Number of pages5
JournalApplied Physics Letters
Volume110
Issue number9
Early online date27 Feb 2017
DOIs
Publication statusPublished - 27 Feb 2017

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Keywords

  • exciton localization
  • uniform population inversion
  • threshold current
  • lasing
  • aluminium
  • ultra violet laser diodes
  • photoluminescence
  • temperature dependence
  • near-band-edge emission
  • basal-plane stacking faults

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