Optical detection of magnetic resonance for a deep-level defect in Silicon

K. M. Lee, K. P. O'Donnell, J. Weber, B. C. Cavenett, G. D. Watkins

Research output: Contribution to journalArticle

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Abstract

Optical detection of magnetic resonance is reported for the 0.97-eV luminescence in neutron-irradiated silicon. The resonance is of an excited triplet (S=1) state of the defect, which is not the radiative state, known to be a singlet (S=0). The spectrum is unusual in that it is characteristic of a statically distorted defect (from C3v to C1h), but with residual dynamic tunneling effects where random strain stabilizes mixtures of the static C1h distortions. Vacancy-related models previously suggested for the defect are tentatively ruled out.

LanguageEnglish
Pages37-40
Number of pages4
JournalPhysical Review Letters
Volume48
Issue number1
DOIs
Publication statusPublished - 4 Jan 1982

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magnetic resonance
defects
silicon
luminescence
neutrons

Keywords

  • optically detected magnetic resonance
  • ODMR
  • silicon

Cite this

Lee, K. M. ; O'Donnell, K. P. ; Weber, J. ; Cavenett, B. C. ; Watkins, G. D. / Optical detection of magnetic resonance for a deep-level defect in Silicon. In: Physical Review Letters. 1982 ; Vol. 48, No. 1. pp. 37-40.
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Optical detection of magnetic resonance for a deep-level defect in Silicon. / Lee, K. M.; O'Donnell, K. P.; Weber, J.; Cavenett, B. C.; Watkins, G. D.

In: Physical Review Letters, Vol. 48, No. 1, 04.01.1982, p. 37-40.

Research output: Contribution to journalArticle

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