Optical detection of magnetic resonance for a deep-level defect in Silicon

K. M. Lee, K. P. O'Donnell, J. Weber, B. C. Cavenett, G. D. Watkins

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Abstract

Optical detection of magnetic resonance is reported for the 0.97-eV luminescence in neutron-irradiated silicon. The resonance is of an excited triplet (S=1) state of the defect, which is not the radiative state, known to be a singlet (S=0). The spectrum is unusual in that it is characteristic of a statically distorted defect (from C3v to C1h), but with residual dynamic tunneling effects where random strain stabilizes mixtures of the static C1h distortions. Vacancy-related models previously suggested for the defect are tentatively ruled out.

Original languageEnglish
Pages (from-to)37-40
Number of pages4
JournalPhysical Review Letters
Volume48
Issue number1
DOIs
Publication statusPublished - 4 Jan 1982

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Keywords

  • optically detected magnetic resonance
  • ODMR
  • silicon

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