TY - JOUR
T1 - Optical and structural properties of InGaN epilayers with very high indium content
AU - Bayliss, S.C
AU - Demeester, P
AU - Fletcher, I
AU - Martin, R.W
AU - Middleton, P.G
AU - Moerman, I
AU - O'Donnell, K.P
AU - Sapelkin, A
AU - Trager-Cowan, C
AU - Van Der Stricht, W
AU - Young, C
PY - 1999/5/6
Y1 - 1999/5/6
N2 - We present the results of optical and structural investigations of InGaN epilayers grown by Metallorganic Vapour Phase Epitaxy (MOVPE). The peak energies of characteristic photoluminescence (PL) bands allow us to identify regions of crystal with different mean InN: (InN + GaN) fraction in the range from 0.1 to nearly 1 in selected samples. The PL peak energy and the optical absorption band edge are strongly intercorrelated, the Stokes' shift and the Urbach tailing energy both increase with InN fraction. High-resolution energy dispersive X-ray analysis (EDX), coupled with scanning electron microscopy (SEM) and cathodoluminescence (CL) imaging, helps to establish striking microscale correlations between optical and structural properties. Finally, X-ray absorption fine structure (XAFS) at the In and Ga K-edges reveals characteristic local structure on the atomic scale for InGaN solid solutions over the available range of In:Ga composition ratios.
AB - We present the results of optical and structural investigations of InGaN epilayers grown by Metallorganic Vapour Phase Epitaxy (MOVPE). The peak energies of characteristic photoluminescence (PL) bands allow us to identify regions of crystal with different mean InN: (InN + GaN) fraction in the range from 0.1 to nearly 1 in selected samples. The PL peak energy and the optical absorption band edge are strongly intercorrelated, the Stokes' shift and the Urbach tailing energy both increase with InN fraction. High-resolution energy dispersive X-ray analysis (EDX), coupled with scanning electron microscopy (SEM) and cathodoluminescence (CL) imaging, helps to establish striking microscale correlations between optical and structural properties. Finally, X-ray absorption fine structure (XAFS) at the In and Ga K-edges reveals characteristic local structure on the atomic scale for InGaN solid solutions over the available range of In:Ga composition ratios.
KW - InGaN
KW - photoluminescence
KW - MOVPE
KW - EDX
KW - XAFS
UR - http://www.scopus.com/inward/record.url?scp=0033528908&partnerID=8YFLogxK
UR - https://www.sciencedirect.com/journal/materials-science-and-engineering-b
U2 - 10.1016/S0921-5107(98)00358-4
DO - 10.1016/S0921-5107(98)00358-4
M3 - Conference Contribution
AN - SCOPUS:0033528908
VL - 59
SP - 292
EP - 297
JO - Materials Science and Engineering B
JF - Materials Science and Engineering B
SN - 0921-5107
IS - 1-3
T2 - 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-MRS Meeting)
Y2 - 16 June 1998 through 19 June 1998
ER -