Optical and structural properties of InGaN epilayers with very high indium content

S.C Bayliss; P Demeester; I Fletcher; R.W Martin; P.G Middleton; I Moerman; K.P O'Donnell; A Sapelkin; C Trager-Cowan; W Van Der Stricht; C Young

doi:10.1016/S0921-5107(98)00358-4

Optical and structural properties of InGaN epilayers with very high indium content

S.C Bayliss, P Demeester, I Fletcher, R.W Martin, P.G Middleton, I Moerman, K.P O'Donnell, A Sapelkin, C Trager-Cowan, W Van Der Stricht, C Young

Physics

Research output: Contribution to journal › Conference article › peer-review

15 Citations (Scopus)

Abstract

We present the results of optical and structural investigations of InGaN epilayers grown by Metallorganic Vapour Phase Epitaxy (MOVPE). The peak energies of characteristic photoluminescence (PL) bands allow us to identify regions of crystal with different mean InN: (InN + GaN) fraction in the range from 0.1 to nearly 1 in selected samples. The PL peak energy and the optical absorption band edge are strongly intercorrelated, the Stokes' shift and the Urbach tailing energy both increase with InN fraction. High-resolution energy dispersive X-ray analysis (EDX), coupled with scanning electron microscopy (SEM) and cathodoluminescence (CL) imaging, helps to establish striking microscale correlations between optical and structural properties. Finally, X-ray absorption fine structure (XAFS) at the In and Ga K-edges reveals characteristic local structure on the atomic scale for InGaN solid solutions over the available range of In:Ga composition ratios.

Original language	English
Pages (from-to)	292-297
Number of pages	6
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	59
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(98)00358-4
Publication status	Published - 6 May 1999
Event	1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-MRS Meeting) - Strasbourg Duration: 16 Jun 1998 → 19 Jun 1998

Keywords

InGaN
photoluminescence
MOVPE
EDX
XAFS

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10.1016/S0921-5107(98)00358-4

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Bayliss, S. C., Demeester, P., Fletcher, I., Martin, R. W., Middleton, P. G., Moerman, I., O'Donnell, K. P., Sapelkin, A., Trager-Cowan, C., Van Der Stricht, W., & Young, C. (1999). Optical and structural properties of InGaN epilayers with very high indium content. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 59(1-3), 292-297. https://doi.org/10.1016/S0921-5107(98)00358-4

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title = "Optical and structural properties of InGaN epilayers with very high indium content",

abstract = "We present the results of optical and structural investigations of InGaN epilayers grown by Metallorganic Vapour Phase Epitaxy (MOVPE). The peak energies of characteristic photoluminescence (PL) bands allow us to identify regions of crystal with different mean InN: (InN + GaN) fraction in the range from 0.1 to nearly 1 in selected samples. The PL peak energy and the optical absorption band edge are strongly intercorrelated, the Stokes' shift and the Urbach tailing energy both increase with InN fraction. High-resolution energy dispersive X-ray analysis (EDX), coupled with scanning electron microscopy (SEM) and cathodoluminescence (CL) imaging, helps to establish striking microscale correlations between optical and structural properties. Finally, X-ray absorption fine structure (XAFS) at the In and Ga K-edges reveals characteristic local structure on the atomic scale for InGaN solid solutions over the available range of In:Ga composition ratios.",

keywords = "InGaN, photoluminescence, MOVPE, EDX, XAFS",

author = "S.C Bayliss and P Demeester and I Fletcher and R.W Martin and P.G Middleton and I Moerman and K.P O'Donnell and A Sapelkin and C Trager-Cowan and {Van Der Stricht}, W and C Young",

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doi = "10.1016/S0921-5107(98)00358-4",

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Bayliss, SC, Demeester, P, Fletcher, I, Martin, RW, Middleton, PG, Moerman, I, O'Donnell, KP, Sapelkin, A, Trager-Cowan, C, Van Der Stricht, W & Young, C 1999, 'Optical and structural properties of InGaN epilayers with very high indium content', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 59, no. 1-3, pp. 292-297. https://doi.org/10.1016/S0921-5107(98)00358-4

TY - JOUR

T1 - Optical and structural properties of InGaN epilayers with very high indium content

AU - Bayliss, S.C

AU - Demeester, P

AU - Fletcher, I

AU - Martin, R.W

AU - Middleton, P.G

AU - Moerman, I

AU - O'Donnell, K.P

AU - Sapelkin, A

AU - Trager-Cowan, C

AU - Van Der Stricht, W

AU - Young, C

PY - 1999/5/6

Y1 - 1999/5/6

N2 - We present the results of optical and structural investigations of InGaN epilayers grown by Metallorganic Vapour Phase Epitaxy (MOVPE). The peak energies of characteristic photoluminescence (PL) bands allow us to identify regions of crystal with different mean InN: (InN + GaN) fraction in the range from 0.1 to nearly 1 in selected samples. The PL peak energy and the optical absorption band edge are strongly intercorrelated, the Stokes' shift and the Urbach tailing energy both increase with InN fraction. High-resolution energy dispersive X-ray analysis (EDX), coupled with scanning electron microscopy (SEM) and cathodoluminescence (CL) imaging, helps to establish striking microscale correlations between optical and structural properties. Finally, X-ray absorption fine structure (XAFS) at the In and Ga K-edges reveals characteristic local structure on the atomic scale for InGaN solid solutions over the available range of In:Ga composition ratios.

AB - We present the results of optical and structural investigations of InGaN epilayers grown by Metallorganic Vapour Phase Epitaxy (MOVPE). The peak energies of characteristic photoluminescence (PL) bands allow us to identify regions of crystal with different mean InN: (InN + GaN) fraction in the range from 0.1 to nearly 1 in selected samples. The PL peak energy and the optical absorption band edge are strongly intercorrelated, the Stokes' shift and the Urbach tailing energy both increase with InN fraction. High-resolution energy dispersive X-ray analysis (EDX), coupled with scanning electron microscopy (SEM) and cathodoluminescence (CL) imaging, helps to establish striking microscale correlations between optical and structural properties. Finally, X-ray absorption fine structure (XAFS) at the In and Ga K-edges reveals characteristic local structure on the atomic scale for InGaN solid solutions over the available range of In:Ga composition ratios.

KW - InGaN

KW - photoluminescence

KW - MOVPE

KW - EDX

KW - XAFS

UR - https://www.sciencedirect.com/journal/materials-science-and-engineering-b

U2 - 10.1016/S0921-5107(98)00358-4

DO - 10.1016/S0921-5107(98)00358-4

M3 - Conference article

AN - SCOPUS:0033528908

SN - 0921-5107

VL - 59

SP - 292

EP - 297

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

T2 - 1998 Symposium L: on Nitrides and Related Wide Band Gap Materials (E-MRS Meeting)

Y2 - 16 June 1998 through 19 June 1998

ER -

Optical and structural properties of InGaN epilayers with very high indium content

Abstract

Keywords

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