Optical and structural properties of InGaN epilayers with very high indium content

S.C Bayliss, P Demeester, I Fletcher, R.W Martin, P.G Middleton, I Moerman, K.P O'Donnell, A Sapelkin, C Trager-Cowan, W Van Der Stricht, C Young

Research output: Contribution to journalConference Contribution

14 Citations (Scopus)

Abstract

We present the results of optical and structural investigations of InGaN epilayers grown by Metallorganic Vapour Phase Epitaxy (MOVPE). The peak energies of characteristic photoluminescence (PL) bands allow us to identify regions of crystal with different mean InN: (InN + GaN) fraction in the range from 0.1 to nearly 1 in selected samples. The PL peak energy and the optical absorption band edge are strongly intercorrelated, the Stokes' shift and the Urbach tailing energy both increase with InN fraction. High-resolution energy dispersive X-ray analysis (EDX), coupled with scanning electron microscopy (SEM) and cathodoluminescence (CL) imaging, helps to establish striking microscale correlations between optical and structural properties. Finally, X-ray absorption fine structure (XAFS) at the In and Ga K-edges reveals characteristic local structure on the atomic scale for InGaN solid solutions over the available range of In:Ga composition ratios.

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Indium
Epilayers
indium
Structural properties
Photoluminescence
Optical properties
optical properties
Metallorganic vapor phase epitaxy
Cathodoluminescence
Energy dispersive X ray analysis
Tailings
X ray absorption
Light absorption
Absorption spectra
Solid solutions
photoluminescence
Imaging techniques
Crystals
Scanning electron microscopy
energy

Keywords

  • InGaN
  • photoluminescence
  • MOVPE
  • EDX
  • XAFS

Cite this

Bayliss, S.C ; Demeester, P ; Fletcher, I ; Martin, R.W ; Middleton, P.G ; Moerman, I ; O'Donnell, K.P ; Sapelkin, A ; Trager-Cowan, C ; Van Der Stricht, W ; Young, C. / Optical and structural properties of InGaN epilayers with very high indium content. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 1999 ; Vol. 59, No. 1-3. pp. 292-297.
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title = "Optical and structural properties of InGaN epilayers with very high indium content",
abstract = "We present the results of optical and structural investigations of InGaN epilayers grown by Metallorganic Vapour Phase Epitaxy (MOVPE). The peak energies of characteristic photoluminescence (PL) bands allow us to identify regions of crystal with different mean InN: (InN + GaN) fraction in the range from 0.1 to nearly 1 in selected samples. The PL peak energy and the optical absorption band edge are strongly intercorrelated, the Stokes' shift and the Urbach tailing energy both increase with InN fraction. High-resolution energy dispersive X-ray analysis (EDX), coupled with scanning electron microscopy (SEM) and cathodoluminescence (CL) imaging, helps to establish striking microscale correlations between optical and structural properties. Finally, X-ray absorption fine structure (XAFS) at the In and Ga K-edges reveals characteristic local structure on the atomic scale for InGaN solid solutions over the available range of In:Ga composition ratios.",
keywords = "InGaN, photoluminescence, MOVPE, EDX, XAFS",
author = "S.C Bayliss and P Demeester and I Fletcher and R.W Martin and P.G Middleton and I Moerman and K.P O'Donnell and A Sapelkin and C Trager-Cowan and {Van Der Stricht}, W and C Young",
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Optical and structural properties of InGaN epilayers with very high indium content. / Bayliss, S.C; Demeester, P; Fletcher, I; Martin, R.W; Middleton, P.G; Moerman, I; O'Donnell, K.P; Sapelkin, A; Trager-Cowan, C; Van Der Stricht, W; Young, C.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 59, No. 1-3, 06.05.1999, p. 292-297.

Research output: Contribution to journalConference Contribution

TY - JOUR

T1 - Optical and structural properties of InGaN epilayers with very high indium content

AU - Bayliss, S.C

AU - Demeester, P

AU - Fletcher, I

AU - Martin, R.W

AU - Middleton, P.G

AU - Moerman, I

AU - O'Donnell, K.P

AU - Sapelkin, A

AU - Trager-Cowan, C

AU - Van Der Stricht, W

AU - Young, C

PY - 1999/5/6

Y1 - 1999/5/6

N2 - We present the results of optical and structural investigations of InGaN epilayers grown by Metallorganic Vapour Phase Epitaxy (MOVPE). The peak energies of characteristic photoluminescence (PL) bands allow us to identify regions of crystal with different mean InN: (InN + GaN) fraction in the range from 0.1 to nearly 1 in selected samples. The PL peak energy and the optical absorption band edge are strongly intercorrelated, the Stokes' shift and the Urbach tailing energy both increase with InN fraction. High-resolution energy dispersive X-ray analysis (EDX), coupled with scanning electron microscopy (SEM) and cathodoluminescence (CL) imaging, helps to establish striking microscale correlations between optical and structural properties. Finally, X-ray absorption fine structure (XAFS) at the In and Ga K-edges reveals characteristic local structure on the atomic scale for InGaN solid solutions over the available range of In:Ga composition ratios.

AB - We present the results of optical and structural investigations of InGaN epilayers grown by Metallorganic Vapour Phase Epitaxy (MOVPE). The peak energies of characteristic photoluminescence (PL) bands allow us to identify regions of crystal with different mean InN: (InN + GaN) fraction in the range from 0.1 to nearly 1 in selected samples. The PL peak energy and the optical absorption band edge are strongly intercorrelated, the Stokes' shift and the Urbach tailing energy both increase with InN fraction. High-resolution energy dispersive X-ray analysis (EDX), coupled with scanning electron microscopy (SEM) and cathodoluminescence (CL) imaging, helps to establish striking microscale correlations between optical and structural properties. Finally, X-ray absorption fine structure (XAFS) at the In and Ga K-edges reveals characteristic local structure on the atomic scale for InGaN solid solutions over the available range of In:Ga composition ratios.

KW - InGaN

KW - photoluminescence

KW - MOVPE

KW - EDX

KW - XAFS

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DO - 10.1016/S0921-5107(98)00358-4

M3 - Conference Contribution

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SP - 292

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JO - Materials Science and Engineering B

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JF - Materials Science and Engineering B

SN - 0921-5107

IS - 1-3

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