Optical and structural properties of Eu-implanted InxAl1−xN

I.S. Roqan, K.P. O'Donnell, R.W. Martin, C. Trager-Cowan, V. Matias, A. Vantomme, K. Lorenz, E. Alves, I.M. Watson

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Off-axis implantation of 80 keV Eu ions into epitaxial c-plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of InxAl1−xN films on GaN in the composition range near lattice matching (x ∼ 0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In0.13Al0.87N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.
LanguageEnglish
Article number083508
Number of pages4
JournalJournal of Applied Physics
Volume106
Issue number8
DOIs
Publication statusPublished - 15 Oct 2009

Fingerprint

rare earth elements
photoluminescence
optical properties
implantation
backscattering
x ray diffraction
quenching
spectroscopy
excitation
ions

Keywords

  • aluminium compounds
  • europium
  • III-V semiconductors
  • indium compounds
  • ion implantation
  • photoluminescence
  • quenching (thermal)
  • Rutherford backscattering
  • semiconductor doping
  • semiconductor epitaxial layers
  • wide band gap semiconductors
  • X-ray diffraction

Cite this

@article{51ea3d96129c42c0a6793ab10c780310,
title = "Optical and structural properties of Eu-implanted InxAl1−xN",
abstract = "Off-axis implantation of 80 keV Eu ions into epitaxial c-plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of InxAl1−xN films on GaN in the composition range near lattice matching (x ∼ 0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In0.13Al0.87N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.",
keywords = "aluminium compounds, europium, III-V semiconductors, indium compounds, ion implantation, photoluminescence, quenching (thermal), Rutherford backscattering, semiconductor doping, semiconductor epitaxial layers, wide band gap semiconductors, X-ray diffraction",
author = "I.S. Roqan and K.P. O'Donnell and R.W. Martin and C. Trager-Cowan and V. Matias and A. Vantomme and K. Lorenz and E. Alves and I.M. Watson",
year = "2009",
month = "10",
day = "15",
doi = "10.1063/1.3245386",
language = "English",
volume = "106",
journal = "Journal of Applied Physics",
issn = "0021-8979",
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Optical and structural properties of Eu-implanted InxAl1−xN. / Roqan, I.S.; O'Donnell, K.P.; Martin, R.W.; Trager-Cowan, C.; Matias, V.; Vantomme, A.; Lorenz, K.; Alves, E.; Watson, I.M.

In: Journal of Applied Physics, Vol. 106, No. 8, 083508 , 15.10.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical and structural properties of Eu-implanted InxAl1−xN

AU - Roqan, I.S.

AU - O'Donnell, K.P.

AU - Martin, R.W.

AU - Trager-Cowan, C.

AU - Matias, V.

AU - Vantomme, A.

AU - Lorenz, K.

AU - Alves, E.

AU - Watson, I.M.

PY - 2009/10/15

Y1 - 2009/10/15

N2 - Off-axis implantation of 80 keV Eu ions into epitaxial c-plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of InxAl1−xN films on GaN in the composition range near lattice matching (x ∼ 0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In0.13Al0.87N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.

AB - Off-axis implantation of 80 keV Eu ions into epitaxial c-plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of InxAl1−xN films on GaN in the composition range near lattice matching (x ∼ 0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In0.13Al0.87N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.

KW - aluminium compounds

KW - europium

KW - III-V semiconductors

KW - indium compounds

KW - ion implantation

KW - photoluminescence

KW - quenching (thermal)

KW - Rutherford backscattering

KW - semiconductor doping

KW - semiconductor epitaxial layers

KW - wide band gap semiconductors

KW - X-ray diffraction

U2 - 10.1063/1.3245386

DO - 10.1063/1.3245386

M3 - Article

VL - 106

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

M1 - 083508

ER -