Optical and structural properties of Eu-implanted InxAl1−xN

I.S. Roqan; K.P. O'Donnell; R.W. Martin; C. Trager-Cowan; V. Matias; A. Vantomme; K. Lorenz; E. Alves; I.M. Watson

doi:10.1063/1.3245386

Optical and structural properties of Eu-implanted InxAl1−xN

I.S. Roqan, K.P. O'Donnell, R.W. Martin, C. Trager-Cowan, V. Matias, A. Vantomme, K. Lorenz, E. Alves, I.M. Watson

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Off-axis implantation of 80 keV Eu ions into epitaxial c-plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of InxAl1−xN films on GaN in the composition range near lattice matching (x ∼ 0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In0.13Al0.87N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.

Original language	English
Article number	083508
Number of pages	4
Journal	Journal of Applied Physics
Volume	106
Issue number	8
DOIs	https://doi.org/10.1063/1.3245386
Publication status	Published - 15 Oct 2009

Keywords

aluminium compounds
europium
III-V semiconductors
indium compounds
ion implantation
photoluminescence
quenching (thermal)
Rutherford backscattering
semiconductor doping
semiconductor epitaxial layers
wide band gap semiconductors
X-ray diffraction

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10.1063/1.3245386

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@article{51ea3d96129c42c0a6793ab10c780310,

title = "Optical and structural properties of Eu-implanted InxAl1−xN",

abstract = "Off-axis implantation of 80 keV Eu ions into epitaxial c-plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of InxAl1−xN films on GaN in the composition range near lattice matching (x ∼ 0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In0.13Al0.87N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.",

keywords = "aluminium compounds, europium, III-V semiconductors, indium compounds, ion implantation, photoluminescence, quenching (thermal), Rutherford backscattering, semiconductor doping, semiconductor epitaxial layers, wide band gap semiconductors, X-ray diffraction",

author = "I.S. Roqan and K.P. O'Donnell and R.W. Martin and C. Trager-Cowan and V. Matias and A. Vantomme and K. Lorenz and E. Alves and I.M. Watson",

year = "2009",

month = oct,

day = "15",

doi = "10.1063/1.3245386",

language = "English",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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TY - JOUR

T1 - Optical and structural properties of Eu-implanted InxAl1−xN

AU - Roqan, I.S.

AU - O'Donnell, K.P.

AU - Martin, R.W.

AU - Trager-Cowan, C.

AU - Matias, V.

AU - Vantomme, A.

AU - Lorenz, K.

AU - Alves, E.

AU - Watson, I.M.

PY - 2009/10/15

Y1 - 2009/10/15

N2 - Off-axis implantation of 80 keV Eu ions into epitaxial c-plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of InxAl1−xN films on GaN in the composition range near lattice matching (x ∼ 0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In0.13Al0.87N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.

AB - Off-axis implantation of 80 keV Eu ions into epitaxial c-plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of InxAl1−xN films on GaN in the composition range near lattice matching (x ∼ 0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In0.13Al0.87N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.

KW - aluminium compounds

KW - europium

KW - III-V semiconductors

KW - indium compounds

KW - ion implantation

KW - photoluminescence

KW - quenching (thermal)

KW - Rutherford backscattering

KW - semiconductor doping

KW - semiconductor epitaxial layers

KW - wide band gap semiconductors

KW - X-ray diffraction

U2 - 10.1063/1.3245386

DO - 10.1063/1.3245386

M3 - Article

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

M1 - 083508

ER -

Optical and structural properties of Eu-implanted InxAl1−xN

Abstract

Keywords

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