Optical and structural properties of Eu-implanted InxAl1−xN

I.S. Roqan, K.P. O'Donnell, R.W. Martin, C. Trager-Cowan, V. Matias, A. Vantomme, K. Lorenz, E. Alves, I.M. Watson

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Off-axis implantation of 80 keV Eu ions into epitaxial c-plane InAlN/GaN bilayers confines rare-earth (RE) doping largely to the InAlN layer. Rutherford backscattering spectrometry and x-ray diffraction show good correlations between the Eu3+ emission linewidth and key structural parameters of InxAl1−xN films on GaN in the composition range near lattice matching (x ∼ 0.17). In contrast to GaN:Eu, selectively excited photoluminescence (PL) and PL excitation spectra reveal the presence of a single dominant optical center in InAlN. Eu3+ emission from In0.13Al0.87N:Eu also shows significantly less thermal quenching than GaN:Eu. InAlN films are therefore superior to GaN for RE optical doping.
Original languageEnglish
Article number083508
Number of pages4
JournalJournal of Applied Physics
Volume106
Issue number8
DOIs
Publication statusPublished - 15 Oct 2009

Keywords

  • aluminium compounds
  • europium
  • III-V semiconductors
  • indium compounds
  • ion implantation
  • photoluminescence
  • quenching (thermal)
  • Rutherford backscattering
  • semiconductor doping
  • semiconductor epitaxial layers
  • wide band gap semiconductors
  • X-ray diffraction

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