Optical and structural properties of dislocations in InGaN

F.C-P. Massabuau, M.K. Horton, E. Pearce, S. Hammersley, P. Chen, M.S. Zielinski, T. Weatherley, G. Divitini, P.R. Edwards, M.J. Kappers, C. McAleese, M.A. Moram, C.J. Humphreys, P. Dawson, R.A. Oliver

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Threading dislocations in thick layers of In x Ga 1-x N (5% < x < 15%) have been investigated by means of cathodoluminescence, time-resolved cathodoluminescence, and molecular dynamics. We show that indium atoms segregate near dislocations in all the samples. This promotes the formation of In-N-In chains and atomic condensates, which localize carriers and hinder nonradiative recombination at dislocations. We note, however, that the dark halo surrounding the dislocations in the cathodoluminescence image becomes increasingly pronounced as the indium fraction of the sample increases. Using transmission electron microscopy, we attribute the dark halo to a region of lower indium content formed below the facet of the V-shaped pit that terminates the dislocation in low composition samples (x < 12%). For x > 12%, the facets of the V-defect featured dislocation bundles instead of the low indium fraction region. In this sample, the origin of the dark halo may relate to a compound effect of the dislocation bundles, of a variation of surface potential, and perhaps, of an increase in carrier diffusion length.

LanguageEnglish
Article number165701
Number of pages10
JournalJournal of Applied Physics
Volume125
Issue number16
Early online date23 Apr 2019
DOIs
Publication statusPublished - 28 Apr 2019

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optical properties
bundles
diffusion length
indium
flat surfaces
halos
defects

Keywords

  • indium gallium nitride
  • cathodoluminescence
  • transmission electron microscopy

Cite this

Massabuau, FC-P., Horton, M. K., Pearce, E., Hammersley, S., Chen, P., Zielinski, M. S., ... Oliver, R. A. (2019). Optical and structural properties of dislocations in InGaN. Journal of Applied Physics, 125(16), [165701]. https://doi.org/10.1063/1.5084330
Massabuau, F.C-P. ; Horton, M.K. ; Pearce, E. ; Hammersley, S. ; Chen, P. ; Zielinski, M.S. ; Weatherley, T. ; Divitini, G. ; Edwards, P.R. ; Kappers, M.J. ; McAleese, C. ; Moram, M.A. ; Humphreys, C.J. ; Dawson, P. ; Oliver, R.A. / Optical and structural properties of dislocations in InGaN. In: Journal of Applied Physics. 2019 ; Vol. 125, No. 16.
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Massabuau, FC-P, Horton, MK, Pearce, E, Hammersley, S, Chen, P, Zielinski, MS, Weatherley, T, Divitini, G, Edwards, PR, Kappers, MJ, McAleese, C, Moram, MA, Humphreys, CJ, Dawson, P & Oliver, RA 2019, 'Optical and structural properties of dislocations in InGaN' Journal of Applied Physics, vol. 125, no. 16, 165701. https://doi.org/10.1063/1.5084330

Optical and structural properties of dislocations in InGaN. / Massabuau, F.C-P.; Horton, M.K.; Pearce, E.; Hammersley, S.; Chen, P.; Zielinski, M.S.; Weatherley, T.; Divitini, G.; Edwards, P.R.; Kappers, M.J.; McAleese, C.; Moram, M.A.; Humphreys, C.J.; Dawson, P.; Oliver, R.A.

In: Journal of Applied Physics, Vol. 125, No. 16, 165701, 28.04.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Optical and structural properties of dislocations in InGaN

AU - Massabuau, F.C-P.

AU - Horton, M.K.

AU - Pearce, E.

AU - Hammersley, S.

AU - Chen, P.

AU - Zielinski, M.S.

AU - Weatherley, T.

AU - Divitini, G.

AU - Edwards, P.R.

AU - Kappers, M.J.

AU - McAleese, C.

AU - Moram, M.A.

AU - Humphreys, C.J.

AU - Dawson, P.

AU - Oliver, R.A.

PY - 2019/4/28

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N2 - Threading dislocations in thick layers of In x Ga 1-x N (5% < x < 15%) have been investigated by means of cathodoluminescence, time-resolved cathodoluminescence, and molecular dynamics. We show that indium atoms segregate near dislocations in all the samples. This promotes the formation of In-N-In chains and atomic condensates, which localize carriers and hinder nonradiative recombination at dislocations. We note, however, that the dark halo surrounding the dislocations in the cathodoluminescence image becomes increasingly pronounced as the indium fraction of the sample increases. Using transmission electron microscopy, we attribute the dark halo to a region of lower indium content formed below the facet of the V-shaped pit that terminates the dislocation in low composition samples (x < 12%). For x > 12%, the facets of the V-defect featured dislocation bundles instead of the low indium fraction region. In this sample, the origin of the dark halo may relate to a compound effect of the dislocation bundles, of a variation of surface potential, and perhaps, of an increase in carrier diffusion length.

AB - Threading dislocations in thick layers of In x Ga 1-x N (5% < x < 15%) have been investigated by means of cathodoluminescence, time-resolved cathodoluminescence, and molecular dynamics. We show that indium atoms segregate near dislocations in all the samples. This promotes the formation of In-N-In chains and atomic condensates, which localize carriers and hinder nonradiative recombination at dislocations. We note, however, that the dark halo surrounding the dislocations in the cathodoluminescence image becomes increasingly pronounced as the indium fraction of the sample increases. Using transmission electron microscopy, we attribute the dark halo to a region of lower indium content formed below the facet of the V-shaped pit that terminates the dislocation in low composition samples (x < 12%). For x > 12%, the facets of the V-defect featured dislocation bundles instead of the low indium fraction region. In this sample, the origin of the dark halo may relate to a compound effect of the dislocation bundles, of a variation of surface potential, and perhaps, of an increase in carrier diffusion length.

KW - indium gallium nitride

KW - cathodoluminescence

KW - transmission electron microscopy

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VL - 125

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 16

M1 - 165701

ER -

Massabuau FC-P, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS et al. Optical and structural properties of dislocations in InGaN. Journal of Applied Physics. 2019 Apr 28;125(16). 165701. https://doi.org/10.1063/1.5084330