Optical and electrical properties of stacked binary InAs-GaAs quantum dot structures prepared under surfactant-mediated growth conditions

M. Alduraibi, M. Missous, P. Luke Sam, Alessio Tierno, Stefanie Renaud Keatings, Thorsten Ackemann

Research output: Contribution to journalConference Contribution

1 Citation (Scopus)

Abstract

The structural, optical and electrical properties of a 10-layer InAs/GaAs quantum dots (QDs) system having InAs layers (2.9ML) grown under surfactant growth conditions, using only an impinging In beam, were investigated. This growth mode still resulted in the formation of quantum dots, but with dot sizes smaller and sample quality better than those for normal growth (NG) of ~3ML InAs-GaAs QD structures. Room temperature photoluminescence measurements showed PL emission from this sample at 1200-1300 nm, i.e. reaching the telecom O-band. At low substrate growth temperatures (LT), 250oC, and under the same “Arsenic free” growth condition an InAs/GaAs superlattice structure without the formation of QD was successfully grown with up to 2.9MLs of InAs, which was not achievable under NG conditions. Both samples showed a noticeable photocurrent when illuminated with 1.2 - 1.3 µm lasers. Thus they can be used as photoconductive materials that can be excited at the telecom wavelengths of 1.3 µm for Terahertz or other optoelectronic applications.
LanguageEnglish
Article number012072
JournalJournal of Physics Conference Series
Volume245
Issue number1
DOIs
Publication statusPublished - 2010

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surfactants
electrical properties
quantum dots
optical properties
arsenic
photocurrents
photoluminescence
room temperature
wavelengths
lasers
temperature

Keywords

  • InAs
  • GaAs
  • quantum dots
  • thin films
  • semiconductors

Cite this

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title = "Optical and electrical properties of stacked binary InAs-GaAs quantum dot structures prepared under surfactant-mediated growth conditions",
abstract = "The structural, optical and electrical properties of a 10-layer InAs/GaAs quantum dots (QDs) system having InAs layers (2.9ML) grown under surfactant growth conditions, using only an impinging In beam, were investigated. This growth mode still resulted in the formation of quantum dots, but with dot sizes smaller and sample quality better than those for normal growth (NG) of ~3ML InAs-GaAs QD structures. Room temperature photoluminescence measurements showed PL emission from this sample at 1200-1300 nm, i.e. reaching the telecom O-band. At low substrate growth temperatures (LT), 250oC, and under the same “Arsenic free” growth condition an InAs/GaAs superlattice structure without the formation of QD was successfully grown with up to 2.9MLs of InAs, which was not achievable under NG conditions. Both samples showed a noticeable photocurrent when illuminated with 1.2 - 1.3 µm lasers. Thus they can be used as photoconductive materials that can be excited at the telecom wavelengths of 1.3 µm for Terahertz or other optoelectronic applications.",
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author = "M. Alduraibi and M. Missous and {Luke Sam}, P. and Alessio Tierno and Keatings, {Stefanie Renaud} and Thorsten Ackemann",
year = "2010",
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journal = "Journal of Physics: Conference Series",
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Optical and electrical properties of stacked binary InAs-GaAs quantum dot structures prepared under surfactant-mediated growth conditions. / Alduraibi, M.; Missous, M. ; Luke Sam, P.; Tierno, Alessio; Keatings, Stefanie Renaud; Ackemann, Thorsten.

In: Journal of Physics Conference Series, Vol. 245, No. 1, 012072, 2010.

Research output: Contribution to journalConference Contribution

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AU - Alduraibi, M.

AU - Missous, M.

AU - Luke Sam, P.

AU - Tierno, Alessio

AU - Keatings, Stefanie Renaud

AU - Ackemann, Thorsten

PY - 2010

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N2 - The structural, optical and electrical properties of a 10-layer InAs/GaAs quantum dots (QDs) system having InAs layers (2.9ML) grown under surfactant growth conditions, using only an impinging In beam, were investigated. This growth mode still resulted in the formation of quantum dots, but with dot sizes smaller and sample quality better than those for normal growth (NG) of ~3ML InAs-GaAs QD structures. Room temperature photoluminescence measurements showed PL emission from this sample at 1200-1300 nm, i.e. reaching the telecom O-band. At low substrate growth temperatures (LT), 250oC, and under the same “Arsenic free” growth condition an InAs/GaAs superlattice structure without the formation of QD was successfully grown with up to 2.9MLs of InAs, which was not achievable under NG conditions. Both samples showed a noticeable photocurrent when illuminated with 1.2 - 1.3 µm lasers. Thus they can be used as photoconductive materials that can be excited at the telecom wavelengths of 1.3 µm for Terahertz or other optoelectronic applications.

AB - The structural, optical and electrical properties of a 10-layer InAs/GaAs quantum dots (QDs) system having InAs layers (2.9ML) grown under surfactant growth conditions, using only an impinging In beam, were investigated. This growth mode still resulted in the formation of quantum dots, but with dot sizes smaller and sample quality better than those for normal growth (NG) of ~3ML InAs-GaAs QD structures. Room temperature photoluminescence measurements showed PL emission from this sample at 1200-1300 nm, i.e. reaching the telecom O-band. At low substrate growth temperatures (LT), 250oC, and under the same “Arsenic free” growth condition an InAs/GaAs superlattice structure without the formation of QD was successfully grown with up to 2.9MLs of InAs, which was not achievable under NG conditions. Both samples showed a noticeable photocurrent when illuminated with 1.2 - 1.3 µm lasers. Thus they can be used as photoconductive materials that can be excited at the telecom wavelengths of 1.3 µm for Terahertz or other optoelectronic applications.

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