On interface properties of very-thin and ultra-thin oxide/a-Si:H structures prepared by both oxygen based plasmas and chemical oxidation

E. Pincik, H. Kobayashi, Helena Gleskova, M. Takahashi, M. Jergel , R. Brunner, L. Ortega, M. Kucera , J. Rusnak

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

Amorphous hydrogenated silicon (a-Si:H) belongs still to most promising types of semiconductors for its utilization in fabrication of TFTs and thin film solar cell technology due to corresponding cheap a-Si:H-based device production in comparison with, e.g. crystalline silicon (c-Si) technologies. The contribution deals with both two important modes of preparation of very-thin and ultra-thin silicon dioxide films in the surface region of a-Si:H semiconductor (oxygen plasma sources and liquid chemical methods) and electrical, optical and structural properties of produced oxide/semiconductor structures, respectively. Dominant aim is focused on investigation of oxide/semiconductor interface properties and their comparison and evaluation from view of utilization of used technological modes in the nanotechnological industry. Following three basic types of oxygen plasma sources were used for the first time in our laboratories for treatments of surfaces of a-Si:H substrates: (i) inductively coupled plasma in connection with its applying at plasma anodic oxidation; (ii) rf plasma as the source of positive oxygen ions for plasma immersion ion implantation process; (iii) dielectric barrier discharge ignited at high pressures. The liquid chemical manner of formation SiO2/a-Si:H structures uses 68wt% nitric acid aqueous solutions (i.e., azeotropic mixture with water). Their application in crystalline Si technologies has been presented with excellent results in the formation of ultra-thin SiO2/c-Si structures [H. Kobayashi, M. Asuha, H.I. Takahashi, J. Appl. Phys. 94 (2003) 7328]. Passivation of surface and interface states by liquid cyanide treatment is additional original technique applied after (or before) formation of almost all formed thin film/a-Si:H structures. Passivation process should be used if high-quality electronical parameters of devices can be reached.
LanguageEnglish
Title of host publicationProceedings of 4th international workshop on basic aspects of nonequilibrium plasmas interacting with surfaces - negative ions, their function & designability
EditorsT. Makabe
Pages36
Number of pages1
Publication statusPublished - 2006
Event4th EU-Japan Joint Symposium on Plasma Processes - Lake Kawaguchi, Japan
Duration: 30 Jan 20061 Feb 2006

Publication series

Name4th EU-Japan Joint Symposium on Plasma Processes held in Lake Kawaguchi, Japan, January 30 – February 1, 2006

Conference

Conference4th EU-Japan Joint Symposium on Plasma Processes
CountryJapan
CityLake Kawaguchi
Period30/01/061/02/06

Fingerprint

oxidation
oxides
oxygen plasma
oxygen
passivity
liquids
semiconductor plasmas
nitric acid
cyanides
silicon
thin films
oxygen ions
positive ions
submerging
amorphous silicon
ion implantation
solar cells
industries
electrical properties
silicon dioxide

Keywords

  • interface properties
  • very-thin
  • ultra-thin
  • oxide/a-si:h structures

Cite this

Pincik, E., Kobayashi, H., Gleskova, H., Takahashi, M., Jergel , M., Brunner, R., ... Rusnak , J. (2006). On interface properties of very-thin and ultra-thin oxide/a-Si:H structures prepared by both oxygen based plasmas and chemical oxidation. In T. Makabe (Ed.), Proceedings of 4th international workshop on basic aspects of nonequilibrium plasmas interacting with surfaces - negative ions, their function & designability (pp. 36). (4th EU-Japan Joint Symposium on Plasma Processes held in Lake Kawaguchi, Japan, January 30 – February 1, 2006).
Pincik, E. ; Kobayashi, H. ; Gleskova, Helena ; Takahashi, M. ; Jergel , M. ; Brunner, R. ; Ortega, L. ; Kucera , M. ; Rusnak , J. . / On interface properties of very-thin and ultra-thin oxide/a-Si:H structures prepared by both oxygen based plasmas and chemical oxidation. Proceedings of 4th international workshop on basic aspects of nonequilibrium plasmas interacting with surfaces - negative ions, their function & designability. editor / T. Makabe. 2006. pp. 36 (4th EU-Japan Joint Symposium on Plasma Processes held in Lake Kawaguchi, Japan, January 30 – February 1, 2006).
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title = "On interface properties of very-thin and ultra-thin oxide/a-Si:H structures prepared by both oxygen based plasmas and chemical oxidation",
abstract = "Amorphous hydrogenated silicon (a-Si:H) belongs still to most promising types of semiconductors for its utilization in fabrication of TFTs and thin film solar cell technology due to corresponding cheap a-Si:H-based device production in comparison with, e.g. crystalline silicon (c-Si) technologies. The contribution deals with both two important modes of preparation of very-thin and ultra-thin silicon dioxide films in the surface region of a-Si:H semiconductor (oxygen plasma sources and liquid chemical methods) and electrical, optical and structural properties of produced oxide/semiconductor structures, respectively. Dominant aim is focused on investigation of oxide/semiconductor interface properties and their comparison and evaluation from view of utilization of used technological modes in the nanotechnological industry. Following three basic types of oxygen plasma sources were used for the first time in our laboratories for treatments of surfaces of a-Si:H substrates: (i) inductively coupled plasma in connection with its applying at plasma anodic oxidation; (ii) rf plasma as the source of positive oxygen ions for plasma immersion ion implantation process; (iii) dielectric barrier discharge ignited at high pressures. The liquid chemical manner of formation SiO2/a-Si:H structures uses 68wt{\%} nitric acid aqueous solutions (i.e., azeotropic mixture with water). Their application in crystalline Si technologies has been presented with excellent results in the formation of ultra-thin SiO2/c-Si structures [H. Kobayashi, M. Asuha, H.I. Takahashi, J. Appl. Phys. 94 (2003) 7328]. Passivation of surface and interface states by liquid cyanide treatment is additional original technique applied after (or before) formation of almost all formed thin film/a-Si:H structures. Passivation process should be used if high-quality electronical parameters of devices can be reached.",
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language = "English",
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Pincik, E, Kobayashi, H, Gleskova, H, Takahashi, M, Jergel , M, Brunner, R, Ortega, L, Kucera , M & Rusnak , J 2006, On interface properties of very-thin and ultra-thin oxide/a-Si:H structures prepared by both oxygen based plasmas and chemical oxidation. in T Makabe (ed.), Proceedings of 4th international workshop on basic aspects of nonequilibrium plasmas interacting with surfaces - negative ions, their function & designability. 4th EU-Japan Joint Symposium on Plasma Processes held in Lake Kawaguchi, Japan, January 30 – February 1, 2006, pp. 36, 4th EU-Japan Joint Symposium on Plasma Processes, Lake Kawaguchi, Japan, 30/01/06.

On interface properties of very-thin and ultra-thin oxide/a-Si:H structures prepared by both oxygen based plasmas and chemical oxidation. / Pincik, E. ; Kobayashi, H.; Gleskova, Helena; Takahashi, M. ; Jergel , M. ; Brunner, R.; Ortega, L. ; Kucera , M. ; Rusnak , J. .

Proceedings of 4th international workshop on basic aspects of nonequilibrium plasmas interacting with surfaces - negative ions, their function & designability. ed. / T. Makabe. 2006. p. 36 (4th EU-Japan Joint Symposium on Plasma Processes held in Lake Kawaguchi, Japan, January 30 – February 1, 2006).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - On interface properties of very-thin and ultra-thin oxide/a-Si:H structures prepared by both oxygen based plasmas and chemical oxidation

AU - Pincik, E.

AU - Kobayashi, H.

AU - Gleskova, Helena

AU - Takahashi, M.

AU - Jergel , M.

AU - Brunner, R.

AU - Ortega, L.

AU - Kucera , M.

AU - Rusnak , J.

PY - 2006

Y1 - 2006

N2 - Amorphous hydrogenated silicon (a-Si:H) belongs still to most promising types of semiconductors for its utilization in fabrication of TFTs and thin film solar cell technology due to corresponding cheap a-Si:H-based device production in comparison with, e.g. crystalline silicon (c-Si) technologies. The contribution deals with both two important modes of preparation of very-thin and ultra-thin silicon dioxide films in the surface region of a-Si:H semiconductor (oxygen plasma sources and liquid chemical methods) and electrical, optical and structural properties of produced oxide/semiconductor structures, respectively. Dominant aim is focused on investigation of oxide/semiconductor interface properties and their comparison and evaluation from view of utilization of used technological modes in the nanotechnological industry. Following three basic types of oxygen plasma sources were used for the first time in our laboratories for treatments of surfaces of a-Si:H substrates: (i) inductively coupled plasma in connection with its applying at plasma anodic oxidation; (ii) rf plasma as the source of positive oxygen ions for plasma immersion ion implantation process; (iii) dielectric barrier discharge ignited at high pressures. The liquid chemical manner of formation SiO2/a-Si:H structures uses 68wt% nitric acid aqueous solutions (i.e., azeotropic mixture with water). Their application in crystalline Si technologies has been presented with excellent results in the formation of ultra-thin SiO2/c-Si structures [H. Kobayashi, M. Asuha, H.I. Takahashi, J. Appl. Phys. 94 (2003) 7328]. Passivation of surface and interface states by liquid cyanide treatment is additional original technique applied after (or before) formation of almost all formed thin film/a-Si:H structures. Passivation process should be used if high-quality electronical parameters of devices can be reached.

AB - Amorphous hydrogenated silicon (a-Si:H) belongs still to most promising types of semiconductors for its utilization in fabrication of TFTs and thin film solar cell technology due to corresponding cheap a-Si:H-based device production in comparison with, e.g. crystalline silicon (c-Si) technologies. The contribution deals with both two important modes of preparation of very-thin and ultra-thin silicon dioxide films in the surface region of a-Si:H semiconductor (oxygen plasma sources and liquid chemical methods) and electrical, optical and structural properties of produced oxide/semiconductor structures, respectively. Dominant aim is focused on investigation of oxide/semiconductor interface properties and their comparison and evaluation from view of utilization of used technological modes in the nanotechnological industry. Following three basic types of oxygen plasma sources were used for the first time in our laboratories for treatments of surfaces of a-Si:H substrates: (i) inductively coupled plasma in connection with its applying at plasma anodic oxidation; (ii) rf plasma as the source of positive oxygen ions for plasma immersion ion implantation process; (iii) dielectric barrier discharge ignited at high pressures. The liquid chemical manner of formation SiO2/a-Si:H structures uses 68wt% nitric acid aqueous solutions (i.e., azeotropic mixture with water). Their application in crystalline Si technologies has been presented with excellent results in the formation of ultra-thin SiO2/c-Si structures [H. Kobayashi, M. Asuha, H.I. Takahashi, J. Appl. Phys. 94 (2003) 7328]. Passivation of surface and interface states by liquid cyanide treatment is additional original technique applied after (or before) formation of almost all formed thin film/a-Si:H structures. Passivation process should be used if high-quality electronical parameters of devices can be reached.

KW - interface properties

KW - very-thin

KW - ultra-thin

KW - oxide/a-si:h structures

M3 - Conference contribution book

T3 - 4th EU-Japan Joint Symposium on Plasma Processes held in Lake Kawaguchi, Japan, January 30 – February 1, 2006

SP - 36

BT - Proceedings of 4th international workshop on basic aspects of nonequilibrium plasmas interacting with surfaces - negative ions, their function & designability

A2 - Makabe, T.

ER -

Pincik E, Kobayashi H, Gleskova H, Takahashi M, Jergel M, Brunner R et al. On interface properties of very-thin and ultra-thin oxide/a-Si:H structures prepared by both oxygen based plasmas and chemical oxidation. In Makabe T, editor, Proceedings of 4th international workshop on basic aspects of nonequilibrium plasmas interacting with surfaces - negative ions, their function & designability. 2006. p. 36. (4th EU-Japan Joint Symposium on Plasma Processes held in Lake Kawaguchi, Japan, January 30 – February 1, 2006).