On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation

Engineering & Materials Science

• Plasma sources 100%
• Crystalline materials 97%
• Plasmas 85%
• Oxidation 81%
• Oxides 79%
• Oxygen 74%
• Passivation 74%
• Oxide semiconductors 73%
• Liquids 62%
• Semiconductor materials 54%
• Silicon 48%
• Interface states 47%
• Thin film solar cells 47%
• Inductively coupled plasma 46%
• Cyanides 45%
• Surface states 44%
• Anodic oxidation 43%
• Nitric acid 42%
• Amorphous silicon 42%
• Ion implantation 41%
• Optical properties 38%
• Structural properties 33%
• Electric properties 32%
• Silica 31%
• Thin films 29%
• Ions 28%
• Fabrication 22%
• Substrates 21%
• Water 16%
• Industry 13%

Physics & Astronomy

• oxidation 68%
• oxides 57%
• oxygen 55%
• oxygen plasma 54%
• passivity 43%
• liquids 36%
• semiconductor plasmas 35%
• cyanides 31%
• nitric acid 31%
• oxygen ions 25%
• positive ions 25%
• silicon 24%
• thin films 23%
• submerging 23%
• aqueous solutions 21%
• amorphous silicon 21%
• ion implantation 21%
• industries 19%
• silicon dioxide 17%
• solar cells 17%
• electrical properties 17%
• preparation 16%
• optical properties 15%
• evaluation 14%
• fabrication 14%
• water 13%

Chemical Compounds

• Plasma 57%
• Semiconductor 56%
• Oxide 50%
• Dioxygen 45%
• Oxidation Reaction 41%
• Chemical Passivation 37%
• Liquid 30%
• Interface State 28%
• Azeotropic Mixture 23%
• Silicon Dioxide 22%
• Ion Implantation 22%
• Surface State 22%
• Inductively Coupled Plasma 18%
• Anodizing 17%
• Chemical Method 17%
• Cyanide 17%
• Nitric Acid 16%
• Solar Cell 16%
• Electrical Property 15%
• Industry 13%
• Optical Property 13%
• Amorphous Material 12%
• Surface 11%
• Pressure 10%
• Aqueous Solution 9%
• Liquid Film 8%
• Ion 7%
• Application 5%