On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation

E. Pincik, H. Kobayashi, R. Hajossy, H. Gleskova, M. Takahashi, M. Jergel, R. Brunner, L. Ortega, M. Kucera, M. Kral, J. Rusnak

Research output: Contribution to journalArticle

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Abstract

Amorphous hydrogenated silicon (a-Si:H) belongs still to most promising types of semiconductors for its utilization in fabrication of TFTs and thin-film solar cell technology due to corresponding cheap a-Si:H-based device production in comparison with, e.g. crystalline silicon (c-Si) technologies. The contribution deals with both two important modes of preparation of very-thin and ultra-thin silicon dioxide films in the surface region of a-Si:H semiconductor (oxygen plasma sources and liquid chemical methods) and electrical, optical and structural properties of produced oxide/semiconductor structures, respectively. Dominant aim is focused on investigation of oxide/semiconductor interface properties and their comparison and evaluation from view of utilization of used technological modes in the nanotechnological industry. Following three basic types of oxygen plasma sources were used for the first time in our laboratories for treatments of surfaces of a-Si:H substrates: (i) inductively coupled plasma in connection with its applying at plasma anodic oxidation; (ii) rf plasma as the source of positive oxygen ions for plasma immersion ion implantation process; (iii) dielectric barrier discharge ignited at high pressures.
The liquid chemical manner of formation SiO2/a-Si:H structures uses 68 wt% nitric acid aqueous solutions (i.e., azeotropic mixture with water). Their application in crystalline Si technologies has been presented with excellent results in the formation of ultra-thin SiO2/c-Si structures [H. Kobayashi, M. Asuha, H.I. Takahashi, J. Appl. Phys. 94 (2003) 7328].
Passivation of surface and interface states by liquid cyanide treatment is additional original technique applied after (or before) formation of almost all formed thin film/a-Si:H structures. Passivation process should be used if high-quality electronical parameters of devices can be reached.

Fingerprint

Oxides
Plasma sources
Silicon
Oxygen
Crystalline materials
Plasmas
Passivation
Oxidation
Liquids
Semiconductor materials
Nitric Acid
Interface states
Anodic oxidation
Cyanides
Surface states
Inductively coupled plasma
Nitric acid
Amorphous silicon
Ion implantation
Silicon Dioxide

Keywords

  • plasma interaction
  • very-thin oxides
  • interface
  • cyanide treatment

Cite this

Pincik, E. ; Kobayashi, H. ; Hajossy, R. ; Gleskova, H. ; Takahashi, M. ; Jergel, M. ; Brunner, R. ; Ortega, L. ; Kucera, M. ; Kral, M. ; Rusnak, J. . / On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation. In: Applied Surface Science. 2007 ; Vol. 253, No. 16. pp. 6697-6715.
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title = "On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation",
abstract = "Amorphous hydrogenated silicon (a-Si:H) belongs still to most promising types of semiconductors for its utilization in fabrication of TFTs and thin-film solar cell technology due to corresponding cheap a-Si:H-based device production in comparison with, e.g. crystalline silicon (c-Si) technologies. The contribution deals with both two important modes of preparation of very-thin and ultra-thin silicon dioxide films in the surface region of a-Si:H semiconductor (oxygen plasma sources and liquid chemical methods) and electrical, optical and structural properties of produced oxide/semiconductor structures, respectively. Dominant aim is focused on investigation of oxide/semiconductor interface properties and their comparison and evaluation from view of utilization of used technological modes in the nanotechnological industry. Following three basic types of oxygen plasma sources were used for the first time in our laboratories for treatments of surfaces of a-Si:H substrates: (i) inductively coupled plasma in connection with its applying at plasma anodic oxidation; (ii) rf plasma as the source of positive oxygen ions for plasma immersion ion implantation process; (iii) dielectric barrier discharge ignited at high pressures. The liquid chemical manner of formation SiO2/a-Si:H structures uses 68 wt{\%} nitric acid aqueous solutions (i.e., azeotropic mixture with water). Their application in crystalline Si technologies has been presented with excellent results in the formation of ultra-thin SiO2/c-Si structures [H. Kobayashi, M. Asuha, H.I. Takahashi, J. Appl. Phys. 94 (2003) 7328]. Passivation of surface and interface states by liquid cyanide treatment is additional original technique applied after (or before) formation of almost all formed thin film/a-Si:H structures. Passivation process should be used if high-quality electronical parameters of devices can be reached.",
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author = "E. Pincik and H. Kobayashi and R. Hajossy and H. Gleskova and M. Takahashi and M. Jergel and R. Brunner and L. Ortega and M. Kucera and M. Kral and J. Rusnak",
year = "2007",
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Pincik, E, Kobayashi, H, Hajossy, R, Gleskova, H, Takahashi, M, Jergel, M, Brunner, R, Ortega, L, Kucera, M, Kral, M & Rusnak, J 2007, 'On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation' Applied Surface Science, vol. 253, no. 16, pp. 6697-6715. https://doi.org/10.1016/j.apsusc.2007.02.007

On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation. / Pincik, E. ; Kobayashi, H.; Hajossy, R. ; Gleskova, H.; Takahashi, M. ; Jergel, M. ; Brunner, R. ; Ortega, L. ; Kucera, M. ; Kral, M. ; Rusnak, J. .

In: Applied Surface Science, Vol. 253, No. 16, 15.06.2007, p. 6697-6715.

Research output: Contribution to journalArticle

TY - JOUR

T1 - On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation

AU - Pincik, E.

AU - Kobayashi, H.

AU - Hajossy, R.

AU - Gleskova, H.

AU - Takahashi, M.

AU - Jergel, M.

AU - Brunner, R.

AU - Ortega, L.

AU - Kucera, M.

AU - Kral, M.

AU - Rusnak, J.

PY - 2007/6/15

Y1 - 2007/6/15

N2 - Amorphous hydrogenated silicon (a-Si:H) belongs still to most promising types of semiconductors for its utilization in fabrication of TFTs and thin-film solar cell technology due to corresponding cheap a-Si:H-based device production in comparison with, e.g. crystalline silicon (c-Si) technologies. The contribution deals with both two important modes of preparation of very-thin and ultra-thin silicon dioxide films in the surface region of a-Si:H semiconductor (oxygen plasma sources and liquid chemical methods) and electrical, optical and structural properties of produced oxide/semiconductor structures, respectively. Dominant aim is focused on investigation of oxide/semiconductor interface properties and their comparison and evaluation from view of utilization of used technological modes in the nanotechnological industry. Following three basic types of oxygen plasma sources were used for the first time in our laboratories for treatments of surfaces of a-Si:H substrates: (i) inductively coupled plasma in connection with its applying at plasma anodic oxidation; (ii) rf plasma as the source of positive oxygen ions for plasma immersion ion implantation process; (iii) dielectric barrier discharge ignited at high pressures. The liquid chemical manner of formation SiO2/a-Si:H structures uses 68 wt% nitric acid aqueous solutions (i.e., azeotropic mixture with water). Their application in crystalline Si technologies has been presented with excellent results in the formation of ultra-thin SiO2/c-Si structures [H. Kobayashi, M. Asuha, H.I. Takahashi, J. Appl. Phys. 94 (2003) 7328]. Passivation of surface and interface states by liquid cyanide treatment is additional original technique applied after (or before) formation of almost all formed thin film/a-Si:H structures. Passivation process should be used if high-quality electronical parameters of devices can be reached.

AB - Amorphous hydrogenated silicon (a-Si:H) belongs still to most promising types of semiconductors for its utilization in fabrication of TFTs and thin-film solar cell technology due to corresponding cheap a-Si:H-based device production in comparison with, e.g. crystalline silicon (c-Si) technologies. The contribution deals with both two important modes of preparation of very-thin and ultra-thin silicon dioxide films in the surface region of a-Si:H semiconductor (oxygen plasma sources and liquid chemical methods) and electrical, optical and structural properties of produced oxide/semiconductor structures, respectively. Dominant aim is focused on investigation of oxide/semiconductor interface properties and their comparison and evaluation from view of utilization of used technological modes in the nanotechnological industry. Following three basic types of oxygen plasma sources were used for the first time in our laboratories for treatments of surfaces of a-Si:H substrates: (i) inductively coupled plasma in connection with its applying at plasma anodic oxidation; (ii) rf plasma as the source of positive oxygen ions for plasma immersion ion implantation process; (iii) dielectric barrier discharge ignited at high pressures. The liquid chemical manner of formation SiO2/a-Si:H structures uses 68 wt% nitric acid aqueous solutions (i.e., azeotropic mixture with water). Their application in crystalline Si technologies has been presented with excellent results in the formation of ultra-thin SiO2/c-Si structures [H. Kobayashi, M. Asuha, H.I. Takahashi, J. Appl. Phys. 94 (2003) 7328]. Passivation of surface and interface states by liquid cyanide treatment is additional original technique applied after (or before) formation of almost all formed thin film/a-Si:H structures. Passivation process should be used if high-quality electronical parameters of devices can be reached.

KW - plasma interaction

KW - very-thin oxides

KW - interface

KW - cyanide treatment

U2 - 10.1016/j.apsusc.2007.02.007

DO - 10.1016/j.apsusc.2007.02.007

M3 - Article

VL - 253

SP - 6697

EP - 6715

JO - Applied Surface Science

T2 - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 16

ER -