ODMR studies of antisite-related luminescence in GaP

K. P. O'Donnell; K. M. Lee; G. D. Watkins

doi:10.1016/0038-1098(82)90325-8

ODMR studies of antisite-related luminescence in GaP

K. P. O'Donnell^*, K. M. Lee, G. D. Watkins

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

By the use of ODMR, we have detected and identified two different antisite defects which contribute to newly-reported infrared luminescence observed in GaP. The antisite proper, P_Ga, gives rise to a spin- 1 2 resonance; the associated luminescence originates in the DA pair recombination of an electron trapped at the deep double donor P⁺ _Ga with a distant shallow acceptor. An impurity-associated centre of the form P_Ga · Y_P is observed in a spin-triplet state via a distinct luminescence band which originates in electron-hole recombination localised at the defect.

Original language	English
Pages (from-to)	1015-1018
Number of pages	4
Journal	Solid State Communications
Volume	44
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(82)90325-8
Publication status	Published - 1 Nov 1982

Keywords

luminescence
GaP
ODMR
optically detected magnetic resonance

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title = "ODMR studies of antisite-related luminescence in GaP",

abstract = "By the use of ODMR, we have detected and identified two different antisite defects which contribute to newly-reported infrared luminescence observed in GaP. The antisite proper, PGa, gives rise to a spin- 1 2 resonance; the associated luminescence originates in the DA pair recombination of an electron trapped at the deep double donor P+ Ga with a distant shallow acceptor. An impurity-associated centre of the form PGa · YP is observed in a spin-triplet state via a distinct luminescence band which originates in electron-hole recombination localised at the defect.",

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author = "O'Donnell, {K. P.} and Lee, {K. M.} and Watkins, {G. D.}",

year = "1982",

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T1 - ODMR studies of antisite-related luminescence in GaP

AU - O'Donnell, K. P.

AU - Lee, K. M.

AU - Watkins, G. D.

PY - 1982/11/1

Y1 - 1982/11/1

N2 - By the use of ODMR, we have detected and identified two different antisite defects which contribute to newly-reported infrared luminescence observed in GaP. The antisite proper, PGa, gives rise to a spin- 1 2 resonance; the associated luminescence originates in the DA pair recombination of an electron trapped at the deep double donor P+ Ga with a distant shallow acceptor. An impurity-associated centre of the form PGa · YP is observed in a spin-triplet state via a distinct luminescence band which originates in electron-hole recombination localised at the defect.

AB - By the use of ODMR, we have detected and identified two different antisite defects which contribute to newly-reported infrared luminescence observed in GaP. The antisite proper, PGa, gives rise to a spin- 1 2 resonance; the associated luminescence originates in the DA pair recombination of an electron trapped at the deep double donor P+ Ga with a distant shallow acceptor. An impurity-associated centre of the form PGa · YP is observed in a spin-triplet state via a distinct luminescence band which originates in electron-hole recombination localised at the defect.

KW - luminescence

KW - GaP

KW - ODMR

KW - optically detected magnetic resonance

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DO - 10.1016/0038-1098(82)90325-8

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SN - 0038-1098

VL - 44

SP - 1015

EP - 1018

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

ODMR studies of antisite-related luminescence in GaP

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Keywords

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