ODMR studies of antisite-related luminescence in GaP

K. P. O'Donnell, K. M. Lee, G. D. Watkins

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Abstract

By the use of ODMR, we have detected and identified two different antisite defects which contribute to newly-reported infrared luminescence observed in GaP. The antisite proper, PGa, gives rise to a spin- 1 2 resonance; the associated luminescence originates in the DA pair recombination of an electron trapped at the deep double donor P+ Ga with a distant shallow acceptor. An impurity-associated centre of the form PGa · YP is observed in a spin-triplet state via a distinct luminescence band which originates in electron-hole recombination localised at the defect.

Original languageEnglish
Pages (from-to)1015-1018
Number of pages4
JournalSolid State Communications
Volume44
Issue number7
DOIs
Publication statusPublished - 1 Nov 1982

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Keywords

  • luminescence
  • GaP
  • ODMR
  • optically detected magnetic resonance

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