ODMR studies of antisite-related luminescence in GaP

K. P. O'Donnell, K. M. Lee, G. D. Watkins

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

By the use of ODMR, we have detected and identified two different antisite defects which contribute to newly-reported infrared luminescence observed in GaP. The antisite proper, PGa, gives rise to a spin- 1 2 resonance; the associated luminescence originates in the DA pair recombination of an electron trapped at the deep double donor P+ Ga with a distant shallow acceptor. An impurity-associated centre of the form PGa · YP is observed in a spin-triplet state via a distinct luminescence band which originates in electron-hole recombination localised at the defect.

LanguageEnglish
Pages1015-1018
Number of pages4
JournalSolid State Communications
Volume44
Issue number7
DOIs
Publication statusPublished - 1 Nov 1982

Fingerprint

Luminescence
luminescence
antisite defects
Defects
Electrons
atomic energy levels
Impurities
Infrared radiation
impurities
defects
electrons

Keywords

  • luminescence
  • GaP
  • ODMR
  • optically detected magnetic resonance

Cite this

O'Donnell, K. P. ; Lee, K. M. ; Watkins, G. D. / ODMR studies of antisite-related luminescence in GaP. In: Solid State Communications. 1982 ; Vol. 44, No. 7. pp. 1015-1018.
@article{6cd14cf3e9114b00b54ad9e0e808d8ff,
title = "ODMR studies of antisite-related luminescence in GaP",
abstract = "By the use of ODMR, we have detected and identified two different antisite defects which contribute to newly-reported infrared luminescence observed in GaP. The antisite proper, PGa, gives rise to a spin- 1 2 resonance; the associated luminescence originates in the DA pair recombination of an electron trapped at the deep double donor P+ Ga with a distant shallow acceptor. An impurity-associated centre of the form PGa · YP is observed in a spin-triplet state via a distinct luminescence band which originates in electron-hole recombination localised at the defect.",
keywords = "luminescence, GaP, ODMR, optically detected magnetic resonance",
author = "O'Donnell, {K. P.} and Lee, {K. M.} and Watkins, {G. D.}",
year = "1982",
month = "11",
day = "1",
doi = "10.1016/0038-1098(82)90325-8",
language = "English",
volume = "44",
pages = "1015--1018",
journal = "Solid State Communications",
issn = "0038-1098",
number = "7",

}

ODMR studies of antisite-related luminescence in GaP. / O'Donnell, K. P.; Lee, K. M.; Watkins, G. D.

In: Solid State Communications, Vol. 44, No. 7, 01.11.1982, p. 1015-1018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - ODMR studies of antisite-related luminescence in GaP

AU - O'Donnell, K. P.

AU - Lee, K. M.

AU - Watkins, G. D.

PY - 1982/11/1

Y1 - 1982/11/1

N2 - By the use of ODMR, we have detected and identified two different antisite defects which contribute to newly-reported infrared luminescence observed in GaP. The antisite proper, PGa, gives rise to a spin- 1 2 resonance; the associated luminescence originates in the DA pair recombination of an electron trapped at the deep double donor P+ Ga with a distant shallow acceptor. An impurity-associated centre of the form PGa · YP is observed in a spin-triplet state via a distinct luminescence band which originates in electron-hole recombination localised at the defect.

AB - By the use of ODMR, we have detected and identified two different antisite defects which contribute to newly-reported infrared luminescence observed in GaP. The antisite proper, PGa, gives rise to a spin- 1 2 resonance; the associated luminescence originates in the DA pair recombination of an electron trapped at the deep double donor P+ Ga with a distant shallow acceptor. An impurity-associated centre of the form PGa · YP is observed in a spin-triplet state via a distinct luminescence band which originates in electron-hole recombination localised at the defect.

KW - luminescence

KW - GaP

KW - ODMR

KW - optically detected magnetic resonance

UR - http://www.scopus.com/inward/record.url?scp=0020202802&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(82)90325-8

DO - 10.1016/0038-1098(82)90325-8

M3 - Article

VL - 44

SP - 1015

EP - 1018

JO - Solid State Communications

T2 - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 7

ER -