Numerical optimization of an active voltage controller for high-power IGBT converters

A.T. Bryant, Y. Wang, S.J. Finney, T.C. Lim, P.R. Palmer

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)

Abstract

Feedback control of insulated gate bipolar transistors (IGBTs) in the active region can be used to regulate the device switching trajectory. This facilitates series connection of devices without the use of external snubber networks. Control must be achieved across the full active region of the IGBT and must balance a number of conflicting system goals including diode recovery. To date, the choice of control parameters has been a largely empirical process. This paper uses accurate device models and formalized optimization procedures to evaluate IGBT active voltage controllers. A detailed optimization for the control of IGBT turn-on is presented in this paper.
Original languageEnglish
Pages (from-to)374-383
Number of pages9
JournalIEEE Transactions on Power Electronics
Volume22
Issue number2
DOIs
Publication statusPublished - Mar 2007

Keywords

  • active voltage control (AVC)
  • optimization
  • power semiconductor device modeling
  • series insulated gate bipolar transistors (IGBTs)

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