Novel 1.3um GaInNAs surface-normal devices

S. Calvez, N. Laurand, S.A. Smith, A.H. Clark, J.M. Hopkins, H.D. Sun, M.D. Dawson, T. Jouhti, J. Kontinnen, M. Pessa

Research output: Contribution to conferencePaper

Abstract

The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 µm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-µm VECSELs capillary-bonded to diamond heatspreader platelets.

Conference

ConferenceEuropean Materials Research Society 2004 Spring Meeting
CityStrasbourg, France
Period24/05/0428/05/04

Fingerprint

surface emitting lasers
cavities
Bragg reflectors
platelets
light amplifiers
compatibility
format
aluminum gallium arsenides
diamonds
diodes

Keywords

  • 1.3um GaInNAs
  • semiconductors
  • photonics
  • optics
  • quantum electronics
  • applied physics

Cite this

Calvez, S., Laurand, N., Smith, S. A., Clark, A. H., Hopkins, J. M., Sun, H. D., ... Pessa, M. (2004). Novel 1.3um GaInNAs surface-normal devices. Paper presented at European Materials Research Society 2004 Spring Meeting, Strasbourg, France, .
Calvez, S. ; Laurand, N. ; Smith, S.A. ; Clark, A.H. ; Hopkins, J.M. ; Sun, H.D. ; Dawson, M.D. ; Jouhti, T. ; Kontinnen, J. ; Pessa, M. / Novel 1.3um GaInNAs surface-normal devices. Paper presented at European Materials Research Society 2004 Spring Meeting, Strasbourg, France, .
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title = "Novel 1.3um GaInNAs surface-normal devices",
abstract = "The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 µm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-µm VECSELs capillary-bonded to diamond heatspreader platelets.",
keywords = "1.3um GaInNAs, semiconductors, photonics, optics, quantum electronics, applied physics",
author = "S. Calvez and N. Laurand and S.A. Smith and A.H. Clark and J.M. Hopkins and H.D. Sun and M.D. Dawson and T. Jouhti and J. Kontinnen and M. Pessa",
year = "2004",
language = "English",
note = "European Materials Research Society 2004 Spring Meeting ; Conference date: 24-05-2004 Through 28-05-2004",

}

Calvez, S, Laurand, N, Smith, SA, Clark, AH, Hopkins, JM, Sun, HD, Dawson, MD, Jouhti, T, Kontinnen, J & Pessa, M 2004, 'Novel 1.3um GaInNAs surface-normal devices' Paper presented at European Materials Research Society 2004 Spring Meeting, Strasbourg, France, 24/05/04 - 28/05/04, .

Novel 1.3um GaInNAs surface-normal devices. / Calvez, S.; Laurand, N.; Smith, S.A.; Clark, A.H.; Hopkins, J.M.; Sun, H.D.; Dawson, M.D.; Jouhti, T.; Kontinnen, J.; Pessa, M.

2004. Paper presented at European Materials Research Society 2004 Spring Meeting, Strasbourg, France, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Novel 1.3um GaInNAs surface-normal devices

AU - Calvez, S.

AU - Laurand, N.

AU - Smith, S.A.

AU - Clark, A.H.

AU - Hopkins, J.M.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Kontinnen, J.

AU - Pessa, M.

PY - 2004

Y1 - 2004

N2 - The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 µm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-µm VECSELs capillary-bonded to diamond heatspreader platelets.

AB - The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 µm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-µm VECSELs capillary-bonded to diamond heatspreader platelets.

KW - 1.3um GaInNAs

KW - semiconductors

KW - photonics

KW - optics

KW - quantum electronics

KW - applied physics

UR - http://www.emrs-strasbourg.com/

M3 - Paper

ER -

Calvez S, Laurand N, Smith SA, Clark AH, Hopkins JM, Sun HD et al. Novel 1.3um GaInNAs surface-normal devices. 2004. Paper presented at European Materials Research Society 2004 Spring Meeting, Strasbourg, France, .