Novel 1.3um GaInNAs surface-normal devices

S. Calvez; N. Laurand; S.A. Smith; A.H. Clark; J.M. Hopkins; H.D. Sun; M.D. Dawson; T. Jouhti; J. Kontinnen; M. Pessa

Novel 1.3um GaInNAs surface-normal devices

S. Calvez, N. Laurand, S.A. Smith, A.H. Clark, J.M. Hopkins, H.D. Sun, M.D. Dawson, T. Jouhti, J. Kontinnen, M. Pessa

Research output: Contribution to conference › Paper › peer-review

Abstract

The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 µm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-µm VECSELs capillary-bonded to diamond heatspreader platelets.

Original language	English
Publication status	Published - 2004
Event	European Materials Research Society 2004 Spring Meeting - Strasbourg, France Duration: 24 May 2004 → 28 May 2004

Conference

Conference	European Materials Research Society 2004 Spring Meeting
City	Strasbourg, France
Period	24/05/04 → 28/05/04

Keywords

1.3um GaInNAs
semiconductors
photonics
optics
quantum electronics
applied physics

Cite this

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title = "Novel 1.3um GaInNAs surface-normal devices",

abstract = "The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 µm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-µm VECSELs capillary-bonded to diamond heatspreader platelets.",

keywords = "1.3um GaInNAs, semiconductors, photonics, optics, quantum electronics, applied physics",

author = "S. Calvez and N. Laurand and S.A. Smith and A.H. Clark and J.M. Hopkins and H.D. Sun and M.D. Dawson and T. Jouhti and J. Kontinnen and M. Pessa",

year = "2004",

language = "English",

note = "European Materials Research Society 2004 Spring Meeting ; Conference date: 24-05-2004 Through 28-05-2004",

}

TY - CONF

T1 - Novel 1.3um GaInNAs surface-normal devices

AU - Calvez, S.

AU - Laurand, N.

AU - Smith, S.A.

AU - Clark, A.H.

AU - Hopkins, J.M.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Jouhti, T.

AU - Kontinnen, J.

AU - Pessa, M.

PY - 2004

Y1 - 2004

N2 - The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 µm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-µm VECSELs capillary-bonded to diamond heatspreader platelets.

AB - The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 µm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-µm VECSELs capillary-bonded to diamond heatspreader platelets.

KW - 1.3um GaInNAs

KW - semiconductors

KW - photonics

KW - optics

KW - quantum electronics

KW - applied physics

UR - http://www.emrs-strasbourg.com/

M3 - Paper

T2 - European Materials Research Society 2004 Spring Meeting

Y2 - 24 May 2004 through 28 May 2004

ER -

Novel 1.3um GaInNAs surface-normal devices

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Conference

Keywords

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