Novel 1.3um GaInNAs surface-normal devices

S. Calvez, N. Laurand, S.A. Smith, A.H. Clark, J.M. Hopkins, H.D. Sun, M.D. Dawson, T. Jouhti, J. Kontinnen, M. Pessa

Research output: Contribution to conferencePaper

Abstract

The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 µm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-µm VECSELs capillary-bonded to diamond heatspreader platelets.
Original languageEnglish
Publication statusPublished - 2004
EventEuropean Materials Research Society 2004 Spring Meeting - Strasbourg, France
Duration: 24 May 200428 May 2004

Conference

ConferenceEuropean Materials Research Society 2004 Spring Meeting
CityStrasbourg, France
Period24/05/0428/05/04

Keywords

  • 1.3um GaInNAs
  • semiconductors
  • photonics
  • optics
  • quantum electronics
  • applied physics

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