Nonlinear theory for a quantum diode in a dense Fermi magnetoplasma

Padma Shukla, Bengt Eliasson

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We present a simple analytical nonlinear theory for quantum diodes in a dense Fermi magnetoplasma. By using the steady-state quantum hydrodynamical equations for a dense Fermi magnetoplasma, we derive coupled nonlinear Schödinger and Poisson equations. The latter are numerically solved to show the effects of the quantum statistical pressure, the quantum tunneling (or the quantum diffraction), and the external magnetic field strength on the potential and electron density profiles in a quantum diode at nanometer scales. It is found that the quantum statistical pressure introduces a lower bound on the steady electron flow in the quantum diode, while the quantum diffraction effect allows the electron tunneling at low flow speeds. The magnetic field acts as a barrier, and larger potentials are needed to drive currents through the quantum diode.
LanguageEnglish
Article number036801
Number of pages4
JournalPhysical Review Letters
Volume100
Issue number3
DOIs
Publication statusPublished - 22 Feb 2008

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diodes
electron density profiles
electron tunneling
Poisson equation
diffraction
magnetic fields
nonlinear equations
field strength
electrons

Keywords

  • nonlinear theory
  • Fermi magnetoplasma
  • quantum diode

Cite this

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Nonlinear theory for a quantum diode in a dense Fermi magnetoplasma. / Shukla, Padma; Eliasson, Bengt.

In: Physical Review Letters, Vol. 100, No. 3, 036801, 22.02.2008.

Research output: Contribution to journalArticle

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AU - Eliasson, Bengt

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AB - We present a simple analytical nonlinear theory for quantum diodes in a dense Fermi magnetoplasma. By using the steady-state quantum hydrodynamical equations for a dense Fermi magnetoplasma, we derive coupled nonlinear Schödinger and Poisson equations. The latter are numerically solved to show the effects of the quantum statistical pressure, the quantum tunneling (or the quantum diffraction), and the external magnetic field strength on the potential and electron density profiles in a quantum diode at nanometer scales. It is found that the quantum statistical pressure introduces a lower bound on the steady electron flow in the quantum diode, while the quantum diffraction effect allows the electron tunneling at low flow speeds. The magnetic field acts as a barrier, and larger potentials are needed to drive currents through the quantum diode.

KW - nonlinear theory

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