Nonlinear optics and saturation behavior of quantum dot samples under continuous wave driving

T. Ackemann, A. Tierno, R. Kuszelewicz, S. Barbay, M.G. Brambilla, C. G. Leburn, C. T. A. Brown

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)
21 Downloads (Pure)


The nonlinear optical response of self-assembled quantum dots is relevant to the application of quantum dot based devices in nonlinear optics, all-optical switching, slow light and self-organization. Theoretical investigations are based on numerical simulations of a spatially and spectrally resolved rate equation model, which takes into account the strong coupling of the quantum dots to the carrier reservoir created by the wetting layer states. The complex dielectric susceptibility of the ground state is obtained. The saturation is shown to follow a behavior in between the one for a dominantly homogeneously and inhomogeneously broadened medium. Approaches to extract the nonlinear refractive index change by fringe shifts in a cavity or self-lensing are discussed. Experimental work on saturation characteristic of InGa/GaAs quantum dots close to the telecommunication O-band (1.24-1.28 mm) and of InAlAs/GaAlAs quantum dots at 780 nm is described and the first demonstration of the cw saturation of absorption in room temperature quantum dot samples is discussed in detail.
Original languageEnglish
Title of host publicationQuantum dot devices
EditorsZ.M. Wang
Place of PublicationNew York
Number of pages45
ISBN (Print)9781461435693
Publication statusPublished - 2012

Publication series

NameLecture Notes in Nanoscale Science and Technology
ISSN (Print)2195-2159


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