Projects per year
Abstract
We demonstrate a non-destructive approach to understanding the growth modes of a GaN thin film and simultaneously quantify its residual strains and their effect on optical and electrical properties using correlative scanning electron microscopy techniques and Raman microscopy. Coincident strain maps derived from electron backscatter diffraction, cathodoluminescence, and confocal Raman techniques reveal strain variations with similar magnitude and directions, especially in the proximity of dislocations. Correlating confocal Raman imaging with electron channeling contrast imaging suggests that the dislocations organize themselves to form a distinctive pattern as a result of the underlying growth mask, where some of them align along the [0001] growth direction and some are inclined. The methodology presented in this work can be adopted to investigate any heteroepitaxial growth, in particular, those using selective masks on the growth substrates, where the morphology influences the subsequent growth.
Original language | English |
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Article number | 075303 |
Number of pages | 9 |
Journal | Journal of Applied Physics |
Volume | 131 |
Issue number | 7 |
Early online date | 16 Feb 2022 |
DOIs | |
Publication status | Published - 21 Feb 2022 |
Keywords
- SEM
- thin films
- GaN LED
- strain analysis
- diffraction and scattering
- cathodoluminescence hyperspectral imaging
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Dive into the research topics of 'Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy'. Together they form a unique fingerprint.Projects
- 6 Finished
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Light-controlled manufacturing of semiconductor structures: a platform for next generation processing of photonic devices
Martin, R. (Principal Investigator), Dawson, M. (Co-investigator), Edwards, P. (Co-investigator), Skabara, P. (Co-investigator) & Watson, I. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/07/17 → 31/07/22
Project: Research
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Quantitative non-destructive nanoscale characterisation of advanced materials
Hourahine, B. (Principal Investigator), Edwards, P. (Co-investigator), Roper, M. (Co-investigator), Trager-Cowan, C. (Co-investigator) & Gunasekar, N. (Research Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/06/17 → 30/11/21
Project: Research
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Nanoanalysis for Advanced Materials and Healthcare - EPSRC strategic equipment
Martin, R. (Principal Investigator), Edwards, P. (Co-investigator), Faulds, K. (Co-investigator), Florence, A. (Co-investigator), Graham, D. (Co-investigator), Sefcik, J. (Co-investigator), Ter Horst, J. (Co-investigator), Trager-Cowan, C. (Co-investigator), Uttamchandani, D. (Co-investigator) & Wark, A. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
8/11/15 → 7/11/19
Project: Research
Datasets
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Data for: "Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy"
Gunasekar, N. (Creator), Edwards, P. (Contributor), Martin, R. (Contributor), Trager-Cowan, C. (Contributor), Hourahine, B. (Contributor), Starosta, B. (Contributor), Nouf-Allehiani, M. (Contributor), Batten, T. (Contributor), Vilalta-Clemente, A. (Contributor), Wilkinson, A. (Contributor), Shields, P. A. (Contributor) & Le Boulbar, E. D. (Contributor), University of Strathclyde, 31 Jan 2022
DOI: 10.15129/659ff01d-e5e0-4868-aaf2-1f3d656f5db3
Dataset