Ni/Au contacts to corundum α-Ga2O3

Fabien C.-P. Massabuau, Francesca Adams, David Nicol, John C. Jarman, Martin Frentrup, Joseph W. Roberts, Thomas J. O'Hanlon, Andras Kovács, Paul R. Chalker, R. A. Oliver

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The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited α-Ga 2O 3 were investigated. Ni forms a Schottky contact with α-Ga 2O 3, irrespectively of the post-annealing temperature. No sign of metal oxidation was observed at the metal-semiconductor interface (unlike what is observed for other metals like Ti), and instead, the metallurgical processes of the Ni-Au bilayer dominate the electrical properties. It is found that 400 °C-450 °C is the optimal annealing temperature, which allows for metal diffusion to heal gaps at the metal/semiconductor interface, but is not sufficient for Ni and Au to significantly interdiffuse and form an alloy with compositional inhomogeneities.

Original languageEnglish
Article numberSF1008
Number of pages5
JournalJapanese Journal of Applied Physics
Issue numberSF
Early online date15 Feb 2023
Publication statusPublished - 30 Jun 2023


  • Ni/Au contacts
  • corundum
  • α-Ga2O3
  • annealing temperature
  • alloys
  • gallium oxide (Ga2O3)


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    Massabuau, Fabien (Recipient), 2020

    Prize: National/international honour

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